KR970051889A - Method for forming self-aligned mask of semiconductor device - Google Patents
Method for forming self-aligned mask of semiconductor device Download PDFInfo
- Publication number
- KR970051889A KR970051889A KR1019950056937A KR19950056937A KR970051889A KR 970051889 A KR970051889 A KR 970051889A KR 1019950056937 A KR1019950056937 A KR 1019950056937A KR 19950056937 A KR19950056937 A KR 19950056937A KR 970051889 A KR970051889 A KR 970051889A
- Authority
- KR
- South Korea
- Prior art keywords
- silicon nitride
- forming
- silicon oxide
- nitride film
- etching
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
본 원은 반도체 소자의 자기 정렬 마스크 형성방법을 개시한다. 개시된 본 발명은 반도체 기판상에 실리콘 산화막과 제1실리콘 질화막을 순차적으로 형성하는 단계; 상기 질화막 상부에 마스크 패턴을 형성하고, 그의 형태로 실리콘 질화막을 식각하는 단계; 상기 식각이 이루어진 실리콘 질화막의 형태로 하부의 실리콘 산화막을 식각하는 단계; 상기 전체 구조 상부에 제2실리콘 질화막을 형성하는 단계; 상기 제2실리콘 질화막을 실리콘 산화막이 노출될 때까지 제거하는 단계; 및 상기 반도체 기판상에 존재하는 실리콘 산화막을 제거하는 단계를 포함한다.The present application discloses a method of forming a self-aligning mask of a semiconductor device. The present invention discloses the steps of sequentially forming a silicon oxide film and a first silicon nitride film on a semiconductor substrate; Forming a mask pattern on the nitride film and etching the silicon nitride film in a form thereof; Etching the lower silicon oxide film in the form of the silicon nitride film formed with the etching; Forming a second silicon nitride film over the entire structure; Removing the second silicon nitride layer until the silicon oxide layer is exposed; And removing the silicon oxide film present on the semiconductor substrate.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1도 (가) 내지 (바)는 본 발명에 따른 반도체 소자의 자기 정렬 마스크 형성방법을 설명하기 위한 공정도.1 (a) to (bar) are process drawings for explaining a method of forming a self-aligning mask of a semiconductor device according to the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950056937A KR970051889A (en) | 1995-12-26 | 1995-12-26 | Method for forming self-aligned mask of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950056937A KR970051889A (en) | 1995-12-26 | 1995-12-26 | Method for forming self-aligned mask of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970051889A true KR970051889A (en) | 1997-07-29 |
Family
ID=66617209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950056937A KR970051889A (en) | 1995-12-26 | 1995-12-26 | Method for forming self-aligned mask of semiconductor device |
Country Status (1)
Country | Link |
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KR (1) | KR970051889A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61228628A (en) * | 1985-04-02 | 1986-10-11 | Nec Corp | Method for inversion of pattern |
JPS63257249A (en) * | 1987-04-14 | 1988-10-25 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
US4968640A (en) * | 1987-02-10 | 1990-11-06 | Industrial Technology Research Institute | Isolation structures for integrated circuits |
JPH07321193A (en) * | 1994-05-27 | 1995-12-08 | Nippon Steel Corp | Manufacture of semiconductor device |
-
1995
- 1995-12-26 KR KR1019950056937A patent/KR970051889A/en not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61228628A (en) * | 1985-04-02 | 1986-10-11 | Nec Corp | Method for inversion of pattern |
US4968640A (en) * | 1987-02-10 | 1990-11-06 | Industrial Technology Research Institute | Isolation structures for integrated circuits |
JPS63257249A (en) * | 1987-04-14 | 1988-10-25 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPH07321193A (en) * | 1994-05-27 | 1995-12-08 | Nippon Steel Corp | Manufacture of semiconductor device |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |