KR960005784A - Buried contact hole formation method of semiconductor device - Google Patents
Buried contact hole formation method of semiconductor device Download PDFInfo
- Publication number
- KR960005784A KR960005784A KR1019940016116A KR19940016116A KR960005784A KR 960005784 A KR960005784 A KR 960005784A KR 1019940016116 A KR1019940016116 A KR 1019940016116A KR 19940016116 A KR19940016116 A KR 19940016116A KR 960005784 A KR960005784 A KR 960005784A
- Authority
- KR
- South Korea
- Prior art keywords
- buried contact
- contact hole
- semiconductor device
- formation method
- hole formation
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체 소자의 버리드 콘택홀 형성방법에 관한 것으로, SRAM소자에서 게이트 전극(워드라인)과 활성영역(active region)간을 연결하기 위해 버리드 콘택홀(burried contact hole)을 형성할때 버리드 콘택폴리막과 하부의 게이트 산화막을 건식식각공정으로 제거하여 버리드 콘택홀을 형성하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a buried contact hole in a semiconductor device, wherein a burried contact hole is formed to connect a gate electrode (word line) and an active region in an SRAM device. A buried contact hole is formed by removing a buried contact poly film and a lower gate oxide film by a dry etching process.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2A도 내지 제2C도는 본 발명에 의한 반도체 소자의 버리드 콘택홀 형성방법을 설명하기 위한 소자의 단면도이다.2A to 2C are cross-sectional views of a device for explaining a buried contact hole forming method of a semiconductor device according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940016116A KR960005784A (en) | 1994-07-06 | 1994-07-06 | Buried contact hole formation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940016116A KR960005784A (en) | 1994-07-06 | 1994-07-06 | Buried contact hole formation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960005784A true KR960005784A (en) | 1996-02-23 |
Family
ID=66689352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940016116A KR960005784A (en) | 1994-07-06 | 1994-07-06 | Buried contact hole formation method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960005784A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100642442B1 (en) * | 2000-03-21 | 2006-11-02 | 주식회사 하이닉스반도체 | Method for Fabricating of Buried Contact |
-
1994
- 1994-07-06 KR KR1019940016116A patent/KR960005784A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100642442B1 (en) * | 2000-03-21 | 2006-11-02 | 주식회사 하이닉스반도체 | Method for Fabricating of Buried Contact |
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