KR960005784A - Buried contact hole formation method of semiconductor device - Google Patents

Buried contact hole formation method of semiconductor device Download PDF

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Publication number
KR960005784A
KR960005784A KR1019940016116A KR19940016116A KR960005784A KR 960005784 A KR960005784 A KR 960005784A KR 1019940016116 A KR1019940016116 A KR 1019940016116A KR 19940016116 A KR19940016116 A KR 19940016116A KR 960005784 A KR960005784 A KR 960005784A
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KR
South Korea
Prior art keywords
buried contact
contact hole
semiconductor device
formation method
hole formation
Prior art date
Application number
KR1019940016116A
Other languages
Korean (ko)
Inventor
정호기
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940016116A priority Critical patent/KR960005784A/en
Publication of KR960005784A publication Critical patent/KR960005784A/en

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Abstract

본 발명은 반도체 소자의 버리드 콘택홀 형성방법에 관한 것으로, SRAM소자에서 게이트 전극(워드라인)과 활성영역(active region)간을 연결하기 위해 버리드 콘택홀(burried contact hole)을 형성할때 버리드 콘택폴리막과 하부의 게이트 산화막을 건식식각공정으로 제거하여 버리드 콘택홀을 형성하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a buried contact hole in a semiconductor device, wherein a burried contact hole is formed to connect a gate electrode (word line) and an active region in an SRAM device. A buried contact hole is formed by removing a buried contact poly film and a lower gate oxide film by a dry etching process.

Description

반도체 소자의 버리드 콘택홀 형성방법Buried contact hole formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2A도 내지 제2C도는 본 발명에 의한 반도체 소자의 버리드 콘택홀 형성방법을 설명하기 위한 소자의 단면도이다.2A to 2C are cross-sectional views of a device for explaining a buried contact hole forming method of a semiconductor device according to the present invention.

Claims (2)

반도체 소자의 버리드 콘택홀 형성방법에 있어서, 실리콘 기판(1)상에 게이트 산화막(2)및 버리드 콘택폴리막(3)을 순차적으로 형성한 후 버리드 콘택폴리막(3)과 게이트 산화막(2)을 건식식각공정으로 소정부위를 순차적으로 식각하여 버리드 콘택홀(10)을 형성하는 것을 특징으로 하는 반도체 소자의 버리드 콘택홀 형성방법.In the buried contact hole forming method of a semiconductor device, after the gate oxide film 2 and the buried contact poly film 3 are sequentially formed on the silicon substrate 1, the buried contact poly film 3 and the gate oxide film The buried contact hole forming method of a semiconductor device, characterized in that the buried contact hole (10) is formed by sequentially etching (2) a predetermined portion by a dry etching process. 제1항에 있어서, 상기 버리드 콘택홀(10)형성을 위한 건식식각공정시, 상기 버리드 콘택 폴리막(3)은 SF6, Cℓ2, He 개스를 사용하고, 상기 게이트 산화막(2)은 Cℓ2, He 개스를 사용하는 것을 특징으로 하는 반도체 소자의 버리드 콘택홀 형성방법.The method of claim 1, wherein in the dry etching process for forming the buried contact hole 10, the buried contact poly film 3 uses SF 6 , Cl 2 , He gas, and the gate oxide film 2 The method of forming a buried contact hole in a semiconductor device, characterized in that the use of Cℓ 2 , He gas. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940016116A 1994-07-06 1994-07-06 Buried contact hole formation method of semiconductor device KR960005784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940016116A KR960005784A (en) 1994-07-06 1994-07-06 Buried contact hole formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940016116A KR960005784A (en) 1994-07-06 1994-07-06 Buried contact hole formation method of semiconductor device

Publications (1)

Publication Number Publication Date
KR960005784A true KR960005784A (en) 1996-02-23

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ID=66689352

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940016116A KR960005784A (en) 1994-07-06 1994-07-06 Buried contact hole formation method of semiconductor device

Country Status (1)

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KR (1) KR960005784A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100642442B1 (en) * 2000-03-21 2006-11-02 주식회사 하이닉스반도체 Method for Fabricating of Buried Contact

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100642442B1 (en) * 2000-03-21 2006-11-02 주식회사 하이닉스반도체 Method for Fabricating of Buried Contact

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