KR960043019A - Method of forming gate oxide film of semiconductor device - Google Patents

Method of forming gate oxide film of semiconductor device Download PDF

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Publication number
KR960043019A
KR960043019A KR1019950014191A KR19950014191A KR960043019A KR 960043019 A KR960043019 A KR 960043019A KR 1019950014191 A KR1019950014191 A KR 1019950014191A KR 19950014191 A KR19950014191 A KR 19950014191A KR 960043019 A KR960043019 A KR 960043019A
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KR
South Korea
Prior art keywords
oxide film
gate oxide
semiconductor device
semiconductor substrate
forming
Prior art date
Application number
KR1019950014191A
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Korean (ko)
Inventor
김승준
신기수
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950014191A priority Critical patent/KR960043019A/en
Publication of KR960043019A publication Critical patent/KR960043019A/en

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  • Drying Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

본 발명은 반도체소자의 게이트산화막 형성방법에 관한 것으로, 반도체기판의 비활성영역에 소자분리절연막을 형성하고 상기 반도체기판의 활성영역에 형성된 구조물을 제거한 다음, 상기 활성영역을 SF6가스와 산소가스를 이용한 건식방법으로 세척함으로써 불순물 및 결함을 제거하고 상기 활성영역에 게이트산화막을 형성하여 반도체소자의 특성 및 신뢰성을 향상시킬 수 있는 기술이다.The present invention relates to a method for forming a gate oxide film of a semiconductor device, comprising forming an isolation layer in an inactive region of a semiconductor substrate, removing a structure formed in an active region of the semiconductor substrate, and then removing the active region from SF 6 gas and oxygen gas. It is a technology that can improve the characteristics and reliability of the semiconductor device by removing impurities and defects by washing by the dry method used to form a gate oxide film in the active region.

Description

반도체소자의 게이트산화막 형성방법Method of forming gate oxide film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1B도는 본 발명의 실시예에 따른 반도체소장의 게이트산화막 형성공정을 도시한 단면도.1B is a cross-sectional view showing a gate oxide film forming process of a semiconductor device according to an embodiment of the present invention.

Claims (6)

반도체기판의 비활성영역에 소자분리절연막을 형성하는 공정과, 상기 반도체기판의 활성영역을 건식방법으로 세척하는 공정과, 사익 활성영역에 게이트산화막을 형성하는 공정을 포함하는 반도체소자의 게이트산화막 형성방법.A method of forming a gate oxide film of a semiconductor device, the method comprising: forming a device isolation insulating film in an inactive region of a semiconductor substrate; washing the active region of the semiconductor substrate by a dry method; . 제1항에 있어서, 상기 건식방법은 SF6가스와 산소가스로 실시되는 것을 특징으로 하는 반도체소자의 게이트산화막 형성방법.The method of claim 1, wherein the dry method is performed using SF 6 gas and oxygen gas. 제2항에 있어서, 상기 SF6가스와 산소가스는 5 내지 25:1의 비로 실시되는 것을 특징으로 하는 반도체소자의 게이트산화막 형성방법.The method of claim 2, wherein the SF 6 gas and the oxygen gas are in a ratio of 5 to 25: 1. 제1항에 있어서, 상기 건식방법은 100 내지 2000mTorr의 압력으로 실시되는 것을 특징으로 하는 반도체 소자의 게이트산화막 형성방법.The method of claim 1, wherein the dry method is performed at a pressure of 100 to 2000 mTorr. 제1항에 있어서, 상기 건식방법은 20내지 100와트의 전력으로 실시되는 것을 특징으로 하는 반도체소자의 게이트산화막 형성방법.The method of claim 1, wherein the dry method is performed at a power of 20 to 100 watts. 제1항에 있어서, 사이 건식방법은 상기 소자분리절연막과 상기 반도체기판이 1:0.7 내지 1.5의 식각비로 실시되는 것을 특징으로 하는 반도체소자의 게이트산화막 형성방법.The method of claim 1, wherein the dry isolation method is performed by performing an etching ratio between the device isolation insulating layer and the semiconductor substrate in a ratio of 1: 0.7 to 1.5. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950014191A 1995-05-31 1995-05-31 Method of forming gate oxide film of semiconductor device KR960043019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950014191A KR960043019A (en) 1995-05-31 1995-05-31 Method of forming gate oxide film of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950014191A KR960043019A (en) 1995-05-31 1995-05-31 Method of forming gate oxide film of semiconductor device

Publications (1)

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KR960043019A true KR960043019A (en) 1996-12-21

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Family Applications (1)

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KR1019950014191A KR960043019A (en) 1995-05-31 1995-05-31 Method of forming gate oxide film of semiconductor device

Country Status (1)

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KR (1) KR960043019A (en)

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