KR960043019A - Method of forming gate oxide film of semiconductor device - Google Patents
Method of forming gate oxide film of semiconductor device Download PDFInfo
- Publication number
- KR960043019A KR960043019A KR1019950014191A KR19950014191A KR960043019A KR 960043019 A KR960043019 A KR 960043019A KR 1019950014191 A KR1019950014191 A KR 1019950014191A KR 19950014191 A KR19950014191 A KR 19950014191A KR 960043019 A KR960043019 A KR 960043019A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- gate oxide
- semiconductor device
- semiconductor substrate
- forming
- Prior art date
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
본 발명은 반도체소자의 게이트산화막 형성방법에 관한 것으로, 반도체기판의 비활성영역에 소자분리절연막을 형성하고 상기 반도체기판의 활성영역에 형성된 구조물을 제거한 다음, 상기 활성영역을 SF6가스와 산소가스를 이용한 건식방법으로 세척함으로써 불순물 및 결함을 제거하고 상기 활성영역에 게이트산화막을 형성하여 반도체소자의 특성 및 신뢰성을 향상시킬 수 있는 기술이다.The present invention relates to a method for forming a gate oxide film of a semiconductor device, comprising forming an isolation layer in an inactive region of a semiconductor substrate, removing a structure formed in an active region of the semiconductor substrate, and then removing the active region from SF 6 gas and oxygen gas. It is a technology that can improve the characteristics and reliability of the semiconductor device by removing impurities and defects by washing by the dry method used to form a gate oxide film in the active region.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1B도는 본 발명의 실시예에 따른 반도체소장의 게이트산화막 형성공정을 도시한 단면도.1B is a cross-sectional view showing a gate oxide film forming process of a semiconductor device according to an embodiment of the present invention.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950014191A KR960043019A (en) | 1995-05-31 | 1995-05-31 | Method of forming gate oxide film of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950014191A KR960043019A (en) | 1995-05-31 | 1995-05-31 | Method of forming gate oxide film of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960043019A true KR960043019A (en) | 1996-12-21 |
Family
ID=66525922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950014191A KR960043019A (en) | 1995-05-31 | 1995-05-31 | Method of forming gate oxide film of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960043019A (en) |
-
1995
- 1995-05-31 KR KR1019950014191A patent/KR960043019A/en not_active Application Discontinuation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR960043019A (en) | Method of forming gate oxide film of semiconductor device | |
KR950021390A (en) | Device isolation film formation method of semiconductor device | |
KR980006032A (en) | Method of forming an isolation region of a semiconductor device | |
KR970023814A (en) | Semiconductor Dry Etching Method | |
KR970072295A (en) | Method for forming a separation film of a semiconductor element | |
KR960002562A (en) | Contact hole formation method of semiconductor device | |
KR960009105A (en) | Device Separation Method of Semiconductor Devices | |
KR970023813A (en) | Semiconductor device manufacturing method | |
KR960005784A (en) | Buried contact hole formation method of semiconductor device | |
KR960026210A (en) | Fine contact formation method | |
KR980005870A (en) | Semiconductor device manufacturing method | |
KR970030629A (en) | Method of forming device isolation region | |
KR960005937A (en) | Method of forming an isolation region of a semiconductor device | |
KR970077523A (en) | Multi-metal film forming method | |
KR970052660A (en) | Isolation Method of Semiconductor Devices | |
KR960019606A (en) | Method of forming polyside gate electrode of semiconductor device | |
KR960002736A (en) | Separator Formation Method of Semiconductor Device | |
KR970023736A (en) | Method of forming contact portion of semiconductor device | |
KR970052415A (en) | Contact formation method of a semiconductor device using a double insulating film | |
KR970053459A (en) | Device Separator Formation Method | |
KR970023833A (en) | Insulation Method of Semiconductor Devices | |
KR970077456A (en) | Method of forming a contact hole in a semiconductor device | |
KR960002554A (en) | Gate electrode formation method of semiconductor device | |
KR970077692A (en) | Gate formation method of semiconductor device | |
KR960002548A (en) | Contact manufacturing method of semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |