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Application filed by 문정환, 금성일렉트론 주식회사filedCritical문정환
Priority to KR1019900010613ApriorityCriticalpatent/KR920003439A/en
Publication of KR920003439ApublicationCriticalpatent/KR920003439A/en
Photosensitive Polymer And Photoresist Processing
(AREA)
Abstract
내용 없음No content
Description
PEB를 이용한 노치 현상개선 방법Notch development method using PEB
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 본 발명에 의한 공정 흐름도,2 is a process flow diagram according to the present invention,
제3도는 본 발명에 의한 공정도.3 is a process chart according to the present invention.
Claims (1)
반도체 소자의 메탈 도선 식각 공정에 있어서, 증착한 메탈위에 감광제 도포와 노광후 PEB를 100℃-120℃에서 60초간 수행하고 현상과 메탈 식각 공정을 수행하는 것을 특징으로 하는 PEB를 이용한 노치 현상 개선 방법.In the metal lead etching process of a semiconductor device, a method of improving notch development using PEB, wherein the photoresist is applied on the deposited metal and the post-exposure PEB is performed at 100 ° C.-120 ° C. for 60 seconds, and the development and metal etching process are performed. .※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900010613A1990-07-131990-07-13
Notch development method using PEB
KR920003439A
(en)