KR900019134A - Gate manufacturing method using RF stuffer etching of semiconductor device - Google Patents

Gate manufacturing method using RF stuffer etching of semiconductor device Download PDF

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Publication number
KR900019134A
KR900019134A KR1019890007136A KR890007136A KR900019134A KR 900019134 A KR900019134 A KR 900019134A KR 1019890007136 A KR1019890007136 A KR 1019890007136A KR 890007136 A KR890007136 A KR 890007136A KR 900019134 A KR900019134 A KR 900019134A
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KR
South Korea
Prior art keywords
etching
semiconductor device
stuffer
gate
gate manufacturing
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Application number
KR1019890007136A
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Korean (ko)
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KR0157855B1 (en
Inventor
박남규
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이만용
금성반도체 주식회사
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Priority to KR1019890007136A priority Critical patent/KR0157855B1/en
Publication of KR900019134A publication Critical patent/KR900019134A/en
Application granted granted Critical
Publication of KR0157855B1 publication Critical patent/KR0157855B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H01L21/145—Ageing

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  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Gerontology & Geriatric Medicine (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음No content

Description

반도체소자의 RF스터퍼에칭을 이용한 게이트제조방법Gate manufacturing method using RF stuffer etching of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명 RF스퍼터에칭에 대한 원리를 보인 설명도.2 is an explanatory diagram showing the principle of the present invention RF sputter etching.

Claims (2)

P도우핑된 포울리실리콘(2), TaSi2(3)를 반응하여 포울리 사이드게이트를 제조하는 반도체소자에 있어서, RF스퍼터에칭을 수행하여 상기 포울리실리콘(2)을 에칭한 후 상기 TaSi2(3)를 증착하여 게이트를 제조하는 것을 특징으로 하는 반도체소자의 RF스퍼터에칭을 이용한 게이트제조방법.In a semiconductor device for producing a fouling side gate by reacting P-doped polysilicon (2) and TaSi 2 (3), the TaSi after etching the polysilicon (2) by performing RF sputter etching 2 (3) A gate manufacturing method using RF sputter etching of a semiconductor device, characterized in that for producing a gate. 제1항에 있어서, 상기 RF스퍼터에칭시 RF바이어스를 -1200V, 30sec로 설정하여 상기 포올리실리콘(2)의 에칭을 50A 미만으로 하는 것을 특징으로 하는 반도체소자의 RF스퍼터에칭을 이용한 게이트제조방법.The method of manufacturing a gate using RF sputter etching of a semiconductor device according to claim 1, wherein the etching of the polysilicon 2 is set to less than 50A by setting the RF bias to -1200 V and 30 sec during the RF sputter etching. . ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890007136A 1989-05-27 1989-05-27 Method for forming gate of semiconductor device KR0157855B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890007136A KR0157855B1 (en) 1989-05-27 1989-05-27 Method for forming gate of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890007136A KR0157855B1 (en) 1989-05-27 1989-05-27 Method for forming gate of semiconductor device

Publications (2)

Publication Number Publication Date
KR900019134A true KR900019134A (en) 1990-12-24
KR0157855B1 KR0157855B1 (en) 1999-02-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890007136A KR0157855B1 (en) 1989-05-27 1989-05-27 Method for forming gate of semiconductor device

Country Status (1)

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KR (1) KR0157855B1 (en)

Also Published As

Publication number Publication date
KR0157855B1 (en) 1999-02-01

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