KR920004905A - Coating method of pad photoresist - Google Patents

Coating method of pad photoresist Download PDF

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Publication number
KR920004905A
KR920004905A KR1019900012458A KR900012458A KR920004905A KR 920004905 A KR920004905 A KR 920004905A KR 1019900012458 A KR1019900012458 A KR 1019900012458A KR 900012458 A KR900012458 A KR 900012458A KR 920004905 A KR920004905 A KR 920004905A
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KR
South Korea
Prior art keywords
chuck
rotating
photoresist
pad
seconds
Prior art date
Application number
KR1019900012458A
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Korean (ko)
Inventor
하덕용
Original Assignee
문정환
금성일렉트론 주식회사
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019900012458A priority Critical patent/KR920004905A/en
Publication of KR920004905A publication Critical patent/KR920004905A/en

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

내용 없음No content

Description

패드의 감광제 코팅방법Coating method of pad photoresist

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도 (A)는 본 발명에 의한 포토공정 완료 단면도 (B)는 (A)의 평면도.2A is a plan view of the photo-process completion cross-sectional view (B) of the present invention, (A).

Claims (2)

바이폴라 선형 IC제품의 마지막 제조공정인 윈도우 형성을 위해 형성된 Si3N4패드에 결함발생시 이를 제거하고 제증착한 후 윈도우 형성을 위해 진행되는 포토/에치공정중 포로공정에 있어서, 감광제 도포장치의 척크를 저스피드에서 일정시간 회전시키면서 웨이퍼에 감광제를 도포하고 이어 상기 척크를 점차 고스피드로 일정시간 회전시키는 공정을 2회이상 실시한 후 노광시간을 늘리면서 상대적으로 현상시간을 감소시켜 진행함을 특징으로 하는 패드의 감광제 코팅방법.Chuck of the photoresist coating device in the capturing process of the photo / etch process in which the Si 3 N 4 pad formed to form the window, the final manufacturing process of the bipolar linear IC product, is removed and de-deposited when a defect occurs. The pad is characterized by applying a photosensitive agent to the wafer while rotating at a low speed for a predetermined time, and then performing the process of rotating the chuck gradually for a predetermined time at a high speed two or more times, and then increasing the exposure time to relatively reduce the development time. Photosensitive coating method. 제1항에 있어서, 감광제 도포공정은 척크를 400rpm에서 5초 동안 회전시켜 웨이퍼에 감광제를 도포하는 단계. 800rpm에서 5초동안 척크를 회전시켜 감광제가 고르게 도포되도록 하는 단계. 1800rpm에서 25초동안 척크를 회전시켜 감광제가 고르게 도포되도록 하는 단계를 순차적으로 구비하여 진행됨을 특징으로 하는 패드의 감광제 코팅방법.The method of claim 1, wherein the photoresist application step comprises applying a photoresist to the wafer by rotating the chuck at 400 rpm for 5 seconds. Rotating the chuck at 800 rpm for 5 seconds to evenly apply the photosensitizer. The method for coating a photosensitive agent of the pad, characterized in that it comprises the step of sequentially rotating the chuck for 25 seconds at 1800rpm to apply the photosensitive agent evenly. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900012458A 1990-08-13 1990-08-13 Coating method of pad photoresist KR920004905A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900012458A KR920004905A (en) 1990-08-13 1990-08-13 Coating method of pad photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900012458A KR920004905A (en) 1990-08-13 1990-08-13 Coating method of pad photoresist

Publications (1)

Publication Number Publication Date
KR920004905A true KR920004905A (en) 1992-03-28

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ID=67542857

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900012458A KR920004905A (en) 1990-08-13 1990-08-13 Coating method of pad photoresist

Country Status (1)

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KR (1) KR920004905A (en)

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