KR960002501A - Pattern formation method of semiconductor device - Google Patents

Pattern formation method of semiconductor device Download PDF

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Publication number
KR960002501A
KR960002501A KR1019940014257A KR19940014257A KR960002501A KR 960002501 A KR960002501 A KR 960002501A KR 1019940014257 A KR1019940014257 A KR 1019940014257A KR 19940014257 A KR19940014257 A KR 19940014257A KR 960002501 A KR960002501 A KR 960002501A
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KR
South Korea
Prior art keywords
pattern
semiconductor device
forming
photosensitive film
pattern formation
Prior art date
Application number
KR1019940014257A
Other languages
Korean (ko)
Inventor
최양규
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940014257A priority Critical patent/KR960002501A/en
Publication of KR960002501A publication Critical patent/KR960002501A/en

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Abstract

본 발명은 반도체소자의 패턴 형성 방법에 관한 것으로, 특히 감광막패턴에 불순물을 주입하여 감광막패턴을 경화시키고, 이 감광막패턴을 마스크로 이용하여 반도체소자의 미세패턴을 형성하는 방법으로 64M DRAM급 이상의 초고집적 반도체 소자의 일반 패턴형성에 광범위하게 이용될 수 있는 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a pattern of a semiconductor device. In particular, an impurity is injected into a photoresist pattern to cure the photoresist pattern, and the micropattern of the semiconductor device is formed by using the photoresist pattern as a mask. It is a technology that can be widely used for general pattern formation of highly integrated semiconductor devices.

Description

반도체 소자의 패턴 형성방법Pattern formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도 및 제2도는 본 발명에 의해 반도체 소자의 패턴 형성 단계를 도시한 단면도.1 and 2 are cross-sectional views showing a step of forming a pattern of a semiconductor device according to the present invention.

Claims (4)

반도체소자의 패턴 형성 방법에 있어서, 기판상부에 패턴을 형성할 물질층을 도포하고, 그 상부에 감광막을 도포한 후, 마스크를 이용한 노광 및 현상공정으로 감광막 패턴을 형성하는 단계와, 불순물을 상기 감광막 패턴으로 이온주입하는 단계와, 불순물이 주입된 감광막패턴을 마스크로 이용하여 노출된 영역의 물질층을 식각하여 물질층패턴을 형성하는 단계를 포함하는 반도체소자의 패턴 형성 방법.In the method for forming a pattern of a semiconductor device, applying a layer of a material to form a pattern on the substrate, and then applying a photosensitive film on the upper portion, forming a photosensitive film pattern by the exposure and development process using a mask, and the impurities A method of forming a pattern of a semiconductor device, comprising: implanting a photoresist pattern into a photoresist pattern; 제1항에 있어서, 상기 불순물은 Si,B,As,P 또는 BF2를 포함하는 것을 특징으로 하는 것을 특징으로 하는 반도체소자의 패턴 형성 방법.The method of claim 1, wherein the impurity comprises Si, B, As, P, or BF 2. 제1항에 있어서, 상기 감광막을 종래의 감광막의 두께보다 얇은 두께로 도포하는 것을 특징으로 하는 반도체소자의 패턴 형성 방법.The method of forming a pattern of a semiconductor device according to claim 1, wherein the photosensitive film is applied to a thickness thinner than that of a conventional photosensitive film. 제1항에 있어서, 상기 마스크는 라인형, 콘택형 또는 소자분리형으로 사용되는 것을 특징으로 하는 반도체소자의 패텬 형성 방법.The method of claim 1, wherein the mask is used in a line, contact, or device isolation type. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940014257A 1994-06-22 1994-06-22 Pattern formation method of semiconductor device KR960002501A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940014257A KR960002501A (en) 1994-06-22 1994-06-22 Pattern formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940014257A KR960002501A (en) 1994-06-22 1994-06-22 Pattern formation method of semiconductor device

Publications (1)

Publication Number Publication Date
KR960002501A true KR960002501A (en) 1996-01-26

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ID=66686279

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940014257A KR960002501A (en) 1994-06-22 1994-06-22 Pattern formation method of semiconductor device

Country Status (1)

Country Link
KR (1) KR960002501A (en)

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