KR940002974A - Single layer resist pattern formation method with improved etching selectivity - Google Patents
Single layer resist pattern formation method with improved etching selectivity Download PDFInfo
- Publication number
- KR940002974A KR940002974A KR1019920013121A KR920013121A KR940002974A KR 940002974 A KR940002974 A KR 940002974A KR 1019920013121 A KR1019920013121 A KR 1019920013121A KR 920013121 A KR920013121 A KR 920013121A KR 940002974 A KR940002974 A KR 940002974A
- Authority
- KR
- South Korea
- Prior art keywords
- single layer
- resist pattern
- layer resist
- etching selectivity
- polysilicon
- Prior art date
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
본 발명은 식각선택비가 향상된 단층레지스트 패턴(Single Layer Resist Pattern)형성방법에 관한 것으로, 식각할 폴리실리콘층위에 레지스트를 도포한후, 노광 및 현상공정으로 레지스트 패턴을 형성시킨 다음, 실리레이션(Silylaton) 공정 및 O2플라즈마 주입공정으로 레지스트 패턴의 표면을 SiO2화시키므로써 식각할 폴리실리콘층에 대한 레지스트 패턴의 식각선택비를 향상시큰 단층레지스트 패턴 형성방법을 기술한 것이다.The present invention relates to a method of forming a single layer resist pattern having improved etching selectivity, and after applying a resist on a polysilicon layer to be etched, forming a resist pattern by an exposure and developing process, It is described a method of forming a single layer resist pattern to improve the etching selectivity of the resist pattern to the polysilicon layer to be etched by SiO 2 process and the surface of the resist pattern by O 2 plasma injection process.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도 내지 제4도는 본 발명의 식각선택비를 향상시킨 단층레지스트 패턴 형성단계를 나타낸 단면도.1 to 4 are cross-sectional views showing a step of forming a single layer resist pattern to improve the etching selectivity of the present invention.
제5도는 식각선택비가 향상된 단층레지스트 패턴을 이용하여 폴리실리콘 패턴을 형성한 상태의 단면도.5 is a cross-sectional view of a polysilicon pattern formed using a single layer resist pattern with improved etching selectivity.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 실리콘 기판 2 : 폴리실리콘층1 silicon substrate 2 polysilicon layer
2' : 폴리실리콘 패턴 3 : 단층레지스트(SLR)2 ': polysilicon pattern 3: single layer resist (SLR)
3' : 단층레지스트 패턴 4 : 마스크3 ': single layer resist pattern 4: mask
5 : 실리콘 확산영역 6 : 산화막5 silicon diffusion region 6 oxide film
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920013121A KR950009293B1 (en) | 1992-07-23 | 1992-07-23 | Single layer resist patterning method enhanced etching selective ration |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920013121A KR950009293B1 (en) | 1992-07-23 | 1992-07-23 | Single layer resist patterning method enhanced etching selective ration |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940002974A true KR940002974A (en) | 1994-02-19 |
KR950009293B1 KR950009293B1 (en) | 1995-08-18 |
Family
ID=19336812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920013121A KR950009293B1 (en) | 1992-07-23 | 1992-07-23 | Single layer resist patterning method enhanced etching selective ration |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950009293B1 (en) |
-
1992
- 1992-07-23 KR KR1019920013121A patent/KR950009293B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR950009293B1 (en) | 1995-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR960005864A (en) | Fine pattern formation method | |
KR940002974A (en) | Single layer resist pattern formation method with improved etching selectivity | |
KR940002957A (en) | Photosensitive film pattern formation method | |
KR940002664A (en) | Photosensitive film pattern formation method | |
KR950021075A (en) | Method for forming contact hole in semiconductor device | |
KR940004747A (en) | Resist Pattern Forming Method | |
KR940009769A (en) | Method of forming photoresist fine pattern of semiconductor device | |
KR900002420A (en) | Method of forming high concentration source region and capacitor surface region of semiconductor device using selective sidewall doping technique (SSWDT) | |
KR950021096A (en) | Contact hole formation method of semiconductor device | |
KR940007610A (en) | Method of forming double photoresist fine pattern using oxidation treatment | |
KR950015575A (en) | Method of Forming Photosensitive Film Pattern | |
JPS55130140A (en) | Fabricating method of semiconductor device | |
KR970018041A (en) | Method of forming fine contact hole in semiconductor device | |
KR940009770A (en) | Silicide layer / polysilicon layer etching method | |
KR940016671A (en) | Method of forming resist pattern for silicide | |
KR940016470A (en) | Method for forming contact hole with inclined surface | |
KR970054111A (en) | Manufacturing method of semiconductor device | |
KR950001918A (en) | Gate pattern forming method using nitride film | |
KR940015669A (en) | Micro pattern formation method using organic arc layer | |
KR950025913A (en) | Micro pattern formation method of semiconductor device | |
KR960026578A (en) | Field oxide film formation method of semiconductor device | |
KR970016754A (en) | Method of manufacturing mask for semiconductor device | |
KR940004725A (en) | Contact hole formation method using step relief mask | |
KR960002501A (en) | Pattern formation method of semiconductor device | |
KR970054082A (en) | Manufacturing Method of Semiconductor Device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20040719 Year of fee payment: 10 |
|
LAPS | Lapse due to unpaid annual fee |