KR940015669A - Micro pattern formation method using organic arc layer - Google Patents
Micro pattern formation method using organic arc layer Download PDFInfo
- Publication number
- KR940015669A KR940015669A KR1019920025886A KR920025886A KR940015669A KR 940015669 A KR940015669 A KR 940015669A KR 1019920025886 A KR1019920025886 A KR 1019920025886A KR 920025886 A KR920025886 A KR 920025886A KR 940015669 A KR940015669 A KR 940015669A
- Authority
- KR
- South Korea
- Prior art keywords
- organic arc
- pattern
- layer
- arc layer
- forming
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract 12
- 230000007261 regionalization Effects 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract 7
- 238000005530 etching Methods 0.000 claims abstract 4
- 229910021332 silicide Inorganic materials 0.000 claims abstract 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract 3
- 239000010703 silicon Substances 0.000 claims abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052760 oxygen Inorganic materials 0.000 claims abstract 2
- 239000001301 oxygen Substances 0.000 claims abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
본 발명은 반도체 제조공정중에 오르가닉 아크층을 이용한 미세패턴 형성방법에 있어서, 패턴을 형성하고자하는 하부층 상부에 오르가닉 아크층(Organic ARC Layer)도포하고, 그 상부에 실리레이션용 감광막을 도포하고 마스크를 이용한 노광 및 현상공정으로 감광막 패턴을 형성하는 단계와, 마스크없이 감광막 패턴의 소정두께를 노광시키고, 실리레이션 공정으로 실리콘을 감광막 패턴 상부면에 주입하는 단계와, 노출된 오르가닉 아크층을 산소플라즈마를 이용한 식각공정으로 식각하여 오르가닉 아크층 패턴 형성하는 동시에 감광막 패턴 상부에 실리콘 산화막을 형성하는 단계를 포함하는 기술이다.In the method of forming a micropattern using an organic arc layer during a semiconductor manufacturing process, an organic arc layer is coated on a lower layer to form a pattern, and a silicide photosensitive film is coated on the upper layer. Forming a photoresist pattern by an exposure and development process using a mask, exposing a predetermined thickness of the photoresist pattern without a mask, injecting silicon into the upper surface of the photoresist pattern by a silicide process, and exposing the exposed organic arc layer It is a technique that includes forming an organic arc layer pattern by etching by an etching process using oxygen plasma and forming a silicon oxide layer on the photoresist pattern.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A도 및 제2B도는 본 발명에 의해 오르가닉 이크층을 이용하여 미세패턴을 형성하는 단계를 도시한 단면도.2A and 2B are sectional views showing the step of forming a fine pattern using an organic acoustic layer according to the present invention.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920025886A KR940015669A (en) | 1992-12-28 | 1992-12-28 | Micro pattern formation method using organic arc layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920025886A KR940015669A (en) | 1992-12-28 | 1992-12-28 | Micro pattern formation method using organic arc layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR940015669A true KR940015669A (en) | 1994-07-21 |
Family
ID=67215135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920025886A KR940015669A (en) | 1992-12-28 | 1992-12-28 | Micro pattern formation method using organic arc layer |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR940015669A (en) |
-
1992
- 1992-12-28 KR KR1019920025886A patent/KR940015669A/en not_active Application Discontinuation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19921228 |
|
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19921228 Comment text: Request for Examination of Application |
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| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 19950616 Patent event code: PE09021S01D |
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| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 19951108 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 19950616 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |