KR940012060A - Photosensitive film pattern formation method - Google Patents

Photosensitive film pattern formation method Download PDF

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Publication number
KR940012060A
KR940012060A KR1019920022798A KR920022798A KR940012060A KR 940012060 A KR940012060 A KR 940012060A KR 1019920022798 A KR1019920022798 A KR 1019920022798A KR 920022798 A KR920022798 A KR 920022798A KR 940012060 A KR940012060 A KR 940012060A
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KR
South Korea
Prior art keywords
film
photoresist
pattern
photoresist film
photosensitive film
Prior art date
Application number
KR1019920022798A
Other languages
Korean (ko)
Other versions
KR950014944B1 (en
Inventor
김진웅
김명선
설여송
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019920022798A priority Critical patent/KR950014944B1/en
Publication of KR940012060A publication Critical patent/KR940012060A/en
Application granted granted Critical
Publication of KR950014944B1 publication Critical patent/KR950014944B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)

Abstract

본 발명은 고집적 소자의 감광막 패턴 형성방법에 관한 것으로 감광막을 노광 및 현상한 후, SOG막을 도포하고 실리콘 이온을 주입하여 비노광영역의 감광막에 고농도 실리콘 확산영역을 형성한 후 SOG막을 제거하고, 산소플라즈마로 건식식각하여 포지티브 감광막을 패턴을 형성함으로써 반도체 소자의 미세콘택형성을 용이하게 해주는 기술이다.The present invention relates to a method for forming a photoresist film pattern of a highly integrated device, after exposing and developing the photoresist film, applying a SOG film and injecting silicon ions to form a high concentration silicon diffusion region in the photosensitive film of the non-exposed area, and then removes the SOG film, oxygen It is a technology that facilitates microcontact formation of a semiconductor device by dry etching with plasma to form a positive photoresist pattern.

Description

감광막 패턴 형성방법Photosensitive film pattern formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2A도 내지 제2C도는 본 발명에 의한 공정방법으로 포지티브(positive)패턴을 형성한 단면도.2A to 2C are cross-sectional views of forming a positive pattern by the process method of the present invention.

Claims (1)

실리콘 기판 상부 감광막을 도포하고 노광 및 현상 (develop) 공정후 실리콘이온을 주입하여 산소플라즈마에 의하여 패턴 형성하는 포지티브감광막 패턴 형성방법에 있어서, 실리콘 기판 상부에 감광막을 도포하고 얇은 두께로 노광 공정을 실시하여 습식 현상하여 노광된 감광막을 제거하는 단계와, 그 상부에 적정두께의 SOG막을 도포한 후 실리콘을 이온 주입하여 고농도의 실리콘 확산영역을 남아 있는 감광막에 형성하고, 습식식각법으로 SOG막을 제거하는 단계와, 산소플라즈마로 노광영역의 감광막을 식각하여 포지티브 감광막 패턴을 형성하는 단계로 이루어진 것을 특징으로 하는 감광막 패턴 형성 방법.In the positive photoresist pattern forming method of applying a photoresist film on a silicon substrate, and injecting silicon ions after the exposure and development process to form a pattern by oxygen plasma, the photoresist film is coated on the silicon substrate and subjected to an exposure process with a thin thickness. Removing the exposed photoresist film by wet development; applying an SOG film having a suitable thickness thereon; and implanting silicon ions to form a high concentration of silicon diffusion region in the remaining photoresist film; and removing the SOG film by wet etching. And forming a positive photoresist pattern by etching the photoresist in the exposure region with oxygen plasma. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920022798A 1992-11-30 1992-11-30 Method of patterning photoresist layer KR950014944B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920022798A KR950014944B1 (en) 1992-11-30 1992-11-30 Method of patterning photoresist layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920022798A KR950014944B1 (en) 1992-11-30 1992-11-30 Method of patterning photoresist layer

Publications (2)

Publication Number Publication Date
KR940012060A true KR940012060A (en) 1994-06-22
KR950014944B1 KR950014944B1 (en) 1995-12-18

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ID=19344268

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920022798A KR950014944B1 (en) 1992-11-30 1992-11-30 Method of patterning photoresist layer

Country Status (1)

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KR (1) KR950014944B1 (en)

Also Published As

Publication number Publication date
KR950014944B1 (en) 1995-12-18

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