KR960019546A - Method of forming fine pattern of semiconductor device - Google Patents

Method of forming fine pattern of semiconductor device Download PDF

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Publication number
KR960019546A
KR960019546A KR1019940030639A KR19940030639A KR960019546A KR 960019546 A KR960019546 A KR 960019546A KR 1019940030639 A KR1019940030639 A KR 1019940030639A KR 19940030639 A KR19940030639 A KR 19940030639A KR 960019546 A KR960019546 A KR 960019546A
Authority
KR
South Korea
Prior art keywords
forming
semiconductor device
photosensitive film
exposing
pattern
Prior art date
Application number
KR1019940030639A
Other languages
Korean (ko)
Other versions
KR0140475B1 (en
Inventor
김근영
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940030639A priority Critical patent/KR0140475B1/en
Publication of KR960019546A publication Critical patent/KR960019546A/en
Application granted granted Critical
Publication of KR0140475B1 publication Critical patent/KR0140475B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Abstract

본 발명은 반도체소자의 미세패턴 형성방법에 관한 것으로, 상이 반전된 노광마스크를 이용하여 반도체기판 상부에 형성된 감광막을 부분노광시키고 노광된 부분을 챔버내에서 아민기체와 반응시켜 알칼리 현상액에 불용 특성을 갖는 산과 아민기체의 결합물질로 형성된 감광막을 형성한 다음, 전면노광공정을 실시하여 상기 결합물질이 형성되지 않은 부분을 노광하고 현상공정으로 이를 제거함으로써 미세패턴을 형성할 수 있는 감광막 패턴을 산과 아민기체의 결합물질로 형성된 감광막으로 형성하되, 예정된 패턴의 크기와 비슷한 크기로 형성하여 반도체소자의 신뢰성 향상 및 고집적화를 가능하게 하는 기술이다.The present invention relates to a method of forming a micropattern of a semiconductor device, and partially exposes a photoresist film formed on an upper surface of a semiconductor substrate using an inverted exposure mask and reacts the exposed portion with an amine gas in an chamber to render insoluble characteristics in an alkaline developer. After forming a photoresist film formed of a binding material of an acid and an amine gas, and then performing a front exposure process, the photoresist film pattern capable of forming a fine pattern is formed by exposing a portion where the binding material is not formed and removing it by a developing process. It is formed of a photosensitive film formed of a bonding material of the gas, but is formed in a size similar to the size of the predetermined pattern to improve the reliability and high integration of the semiconductor device.

Description

반도체 소자의 미세패턴 형성방법Method of forming fine pattern of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명의 실시예에 따른 반도체소자의 미세패턴 형성방법을 도시한 상세도.3 is a detailed view showing a method of forming a fine pattern of a semiconductor device according to an embodiment of the present invention.

Claims (4)

반도체소자의 미세패턴 형성방법에 있어서, 반도체기판 상부에 감광막을 형성하는 공정과, 노광마스크를 이용하여 상기 감광막을 부분노광시키는 공정과, 상기 감광막의 노광된 부분을 아민기체와 반응시켜 산과 아민의 결합물질로 형성된 감광막을 형성하는 공정과, 상기 감광막을 전면노광시켜 노광되지 않은 부분을 노광시키는 공정과, 상기 감광막을 현상시켜 노광된 감광막을 제거함으로써 산과 아민의 결합물질로 형성된 감광막으로 형성된 감광막패턴을 형성하는 공정을 포함하는 반도체소자의 미세패턴 형성방법.A method of forming a fine pattern of a semiconductor device, comprising: forming a photoresist film on an upper surface of a semiconductor substrate, partially exposing the photoresist film using an exposure mask, and reacting the exposed portion of the photoresist film with an amine gas to form an acid and an amine. A photosensitive film pattern formed of a photosensitive film formed of a binding material of an acid and an amine by forming a photosensitive film formed of a bonding material, exposing the unexposed portion by exposing the entire photosensitive film to the entire surface, and removing the exposed photosensitive film by developing the photosensitive film. Method for forming a fine pattern of a semiconductor device comprising the step of forming a. 제1항에 있어서, 상기 노광마스크는 상기 반도체기판 상부에 형성하려는 패턴부의 석영기판을 노출시키는 크롬패턴이 형성된 것을 특징으로 하는 반도체소자의 미세패턴 형성방법.The method of claim 1, wherein the exposure mask is formed with a chromium pattern exposing a quartz substrate on a pattern portion to be formed on the semiconductor substrate. 제1항에 있어서, 상기 노광된 감광막과 아민기체의 반응공정은 상기 아민기체가 반응하는 부분의 균일도를 높이기 위하여 챔버내에서 실시하는 것을 특징으로 하는 반도체소자의 미세패턴 형성방법.The method of forming a micropattern of a semiconductor device according to claim 1, wherein the reaction step of exposing the photosensitive film and the amine gas is performed in a chamber to increase the uniformity of the portion where the amine gas reacts. 제1항에 있어서, 상기 현상공정은 알칼리 현상액으로 실시하는 것을 특징으로 하는 반도체소자의 미세패턴 형성방법.The method of forming a fine pattern of a semiconductor device according to claim 1, wherein said developing step is performed with an alkaline developer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940030639A 1994-11-21 1994-11-21 Fine patterning method of semiconductor device KR0140475B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940030639A KR0140475B1 (en) 1994-11-21 1994-11-21 Fine patterning method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940030639A KR0140475B1 (en) 1994-11-21 1994-11-21 Fine patterning method of semiconductor device

Publications (2)

Publication Number Publication Date
KR960019546A true KR960019546A (en) 1996-06-17
KR0140475B1 KR0140475B1 (en) 1998-07-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940030639A KR0140475B1 (en) 1994-11-21 1994-11-21 Fine patterning method of semiconductor device

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KR (1) KR0140475B1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100429910B1 (en) * 2001-09-12 2004-05-03 학교법인 포항공과대학교 Method for high resolution patterning of by low energy electron beam
KR101966286B1 (en) 2018-01-26 2019-04-05 조재석 A toilet seat that prevents urine from splashing

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KR0140475B1 (en) 1998-07-15

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