KR0140475B1 - Fine patterning method of semiconductor device - Google Patents
Fine patterning method of semiconductor deviceInfo
- Publication number
- KR0140475B1 KR0140475B1 KR1019940030639A KR19940030639A KR0140475B1 KR 0140475 B1 KR0140475 B1 KR 0140475B1 KR 1019940030639 A KR1019940030639 A KR 1019940030639A KR 19940030639 A KR19940030639 A KR 19940030639A KR 0140475 B1 KR0140475 B1 KR 0140475B1
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- Prior art keywords
- pattern
- forming
- photosensitive film
- semiconductor device
- photoresist
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
본 발명은 반도체소자의 미세패턴 형성방법에 관한 것으로, 상이 반전된 노광마스크를 이용하여 반도체기판 상부에 형성된 감광막을 부분노광 시키고 노광된 부분을 챔버내에서 아민기체와 반응시켜 알칼리 현상액에 불용특성을 갖는 산과 아민기체의 결합물질로 형성된 감광막을 형성한 다음, 전면노광공정을 실시하여 상기 결합물질이 형성되지 않는 부분을 노광하고 현상공정으로 이를 제거함으로써 미세패턴을 형성할 수 있는 감광막 패턴을 산과 아민기체의 결합물질로 형성된 감광막으로 형성하되, 예정된 패턴의 크기와 비슷한 크기로 형성하여 반도체소자의 신뢰성 향상 및 고집적화를 가능하게 하는 기술이다.The present invention relates to a method of forming a fine pattern of a semiconductor device, and partially exposes a photoresist film formed on an upper surface of a semiconductor substrate using an inverted exposure mask and reacts the exposed portion with an amine gas in an chamber to provide insoluble characteristics in an alkaline developer. After forming a photoresist film formed of a binding material of an acid and an amine gas, and then performing a front exposure process to expose a portion where the binding material is not formed, a photoresist pattern for forming a micropattern may be formed by removing the photoresist pattern. It is formed of a photosensitive film formed of a bonding material of the gas, but is formed in a size similar to the size of the predetermined pattern to improve the reliability and high integration of the semiconductor device.
Description
제1a도 및 제1b도는 종래기술의 실시예를 도시한 개략도.1A and 1B are schematic diagrams showing embodiments of the prior art.
제2a도 내지 제2f도 그리고, 제3도는 본 발명의 실시예에 따른 반도체소자의 미세패턴 형성방법을 도시한 상세도.2A to 2F and FIG. 3 are detailed views showing a method for forming a fine pattern of a semiconductor device according to an embodiment of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
11, 21 : 석영기판12, 22 : 크롬패턴11, 21: quartz substrate 12, 22: chrome pattern
13, 23 : 반도체기판14 : 감광막패턴13, 23: semiconductor substrate 14: photoresist pattern
24 : 감광막25 : 광원24 photosensitive film 25 light source
27 : 노광된 감광막28 : 챔버27 exposed photosensitive film 28 chamber
29 : 아민기체29: amine gas
30 : 산과 아민기체의 결합물질로 형성된 감광막30: photosensitive film formed of a binding material of an acid and an amine gas
본 발명은 반도체소자의 미세패턴 형성방법에 관한 것으로, 특히 반도체소자 형성공정 중에서 리소그래피(lithography) 기술을 이용하여 미세패턴을 형성하기 위한 감광막패턴을 형성하는 기술에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a fine pattern of a semiconductor device, and more particularly, to a technique of forming a photosensitive film pattern for forming a fine pattern by using lithography technology in a semiconductor device forming process.
일반적으로, 노광마스크는 사각형 형태로 크롬패턴이 형성된 노광마스크에 있어서, 네개의 크롬패턴이 만나는 부분을 패턴을 형성하기위한 노광공정시 많은 빛이 통과한다. 이때, 많은 빛이 산란되어 패턴 형성을 위한 감광막의 예정되지않은 부분을 노광시킨다. 그로인하여, 현상공정시 예정된 크기보다 작은 감광막패턴을 형성함으로써 예정된 크기의 미세패턴을 형성할 수 없다.In general, in the exposure mask in which the chromium pattern is formed in a rectangular shape, a lot of light passes through the exposure process for forming the pattern where the four chromium patterns meet. At this time, a lot of light is scattered to expose an unplanned portion of the photosensitive film for pattern formation. Therefore, the micropattern of the predetermined size cannot be formed by forming the photosensitive film pattern smaller than the predetermined size in the developing step.
또한, 크기가 0.35㎛인 노광마스크를 사용하는 경우는 근접효과에 의하여 반도체기판 상부에 형성되는 감광막패턴의 크기는 마스크의 패턴 크기의 반정도로 형성된다.In the case of using an exposure mask having a size of 0.35 μm, the size of the photoresist pattern formed on the semiconductor substrate by the proximity effect is about half the size of the mask pattern.
이와같이, 예정된 크기의 패턴을 형성하지 못함으로써 반도체소자의 신뢰성을 저하시키고 반도체소자의 고집적화를 불가능하게 하는 문제점이 있다.As such, there is a problem in that it is impossible to form a pattern having a predetermined size, thereby lowering the reliability of the semiconductor device and making it impossible to integrate the semiconductor device.
제1a도 및 제1b도는 종래기술을 도시한 개략도이다.1A and 1B are schematic diagrams showing the prior art.
제1a도는 종래기술로 형성한 노광마스크를 도시한 평면도이다.1A is a plan view showing an exposure mask formed in the prior art.
제1a도를 참조하면, 석영기판(11)에 크롬패턴(12)을 형성한 노광마스크이다. 이때, 크롬패턴(12)의 길이를 L, 그리고 크롬패턴(12) 간의 거리를 S라 한다.Referring to FIG. 1A, an exposure mask in which a chromium pattern 12 is formed on a quartz substrate 11 is formed. At this time, the length of the chrome pattern 12 is L, and the distance between the chrome pattern 12 is S.
제1b도는 제1a도의 노광마스크를 이용하여 반도체기판(13) 상부에 형성한 패턴(14)을 도시한 평면도이다.FIG. 1B is a plan view showing a pattern 14 formed on the semiconductor substrate 13 using the exposure mask of FIG. 1A.
제1b도를 참조하면, 노광마스크를 이용하여 반도체기판(13) 상부에 형성된 감광막(도시안됨)을 노광 및 현상하여 감광막패턴(14)을 형성한다. 이때, 감광막패턴(14)은 노광공정시 빛이 집중되는 제1a도의 ⓧ 부분에서 빛의 산란이 일어난다. 그리하여, 농광공정시 ⓧ 부분 주변의 감광막을 노광시킨다. 그리고, 현상공정후 형성된 감광막패턴(14)은 노광마스크에 형성된 크롬패턴(12)의 크기 L보다 훨씬 작은 L'의 크기로 형성된다.Referring to FIG. 1B, the photoresist layer (not shown) formed on the semiconductor substrate 13 is exposed and developed using an exposure mask to form the photoresist pattern 14. In this case, the photoresist pattern 14 may scatter light at a portion of FIG. 1a where light is concentrated during the exposure process. Thus, during the concentration process, the photosensitive film around the fin portion is exposed. The photoresist pattern 14 formed after the developing process is formed to have a size L ′ that is much smaller than the size L of the chrome pattern 12 formed on the exposure mask.
종래기술에 의하여 형성된 패턴의 길이는 노광마스크에 형성된 크롬패턴의 길이보다 적게 형성된다. 그리고, 패턴간의 거리는 노광마스크에 형성된 크롬패턴의 거리보다 크게 형성된다. 결과적으로, 노광마스크에 형성된 크롬패턴보다 크기는 작다. 그리고, 서로간의 간격은 더 작게 형성되어 예정된 크기의 패턴이 형성되지 않는 것이다.The length of the pattern formed by the prior art is formed less than the length of the chromium pattern formed on the exposure mask. The distance between the patterns is larger than the distance of the chromium pattern formed on the exposure mask. As a result, the size is smaller than the chromium pattern formed on the exposure mask. And, the interval between each other is formed smaller so that a pattern of a predetermined size is not formed.
따라서, 본 발명은 종래기술의 문제점을 해결하기 위하여, 노광마스크의 상을 반전시켜 석영기판에 크롬패턴을 형성하고, 이러한 노광마스크를 이용하여 감광막을 노광시킨 다음, 노광된 감광막에 아민기체를 반응시키고 전면노광을 실시한 다음, 현상공정을 실시함으로써 균일한 감광막패턴을 형성하는 반도체소자의 미세패턴 형성방법을 제공하는데 그 목적이 있다.Therefore, in order to solve the problems of the prior art, the image of the exposure mask is inverted to form a chromium pattern on a quartz substrate, and the photoresist is exposed using the exposure mask, and then an amine gas is reacted to the exposed photoresist. The present invention provides a method for forming a fine pattern of a semiconductor device that forms a uniform photoresist pattern by performing a front exposure and then performing a front exposure.
이상의 목적을 달성하기위한 반도체소자의 미세패턴 형성방법의 특징은, 반도체기판 상부에 감광막을 형성하는 공정과, 노광마스크를 이용하여 상기 감광막을 부분노광시키는 공정과, 상기 감광막의 노광된 부분을 아민기체와 반응시켜 산과 아민의 결합물질로 형성된 감광막을 형성하는 공정과, 상기 감광막을 전면노광시켜 노광되지 않은 부분을 노광시키는 공정과, 상기 감광막을 현상시켜 노광된 감광막을 제거함으로써 산과 아민의 결합물질로 형성된 감광막으로 형성된 감광막패턴을 형성하는 공정을 포함하는 반도체소자의 미세패턴 형성방법에 있어서, 상기 노광마스크 종래의 노광마스크와 비교하여 크롬패턴의 상을 반전시켜 형성하고, 상기 노광된 감광막과 아민기체의 반응공정은 챔버내에서 일정온도를 유지하고 실시하고, 상기 현상공정은 알칼리 현상액으로 실시하는 것이다.Features of the method of forming a fine pattern of a semiconductor device for achieving the above object is a step of forming a photosensitive film on the semiconductor substrate, the step of partially exposing the photosensitive film using an exposure mask, and the amine of the exposed portion of the photosensitive film Reacting with a gas to form a photoresist film formed of a binding material of an acid and an amine, exposing the unexposed portion by exposing the photoresist to the entire surface, and developing the photoresist film to remove the exposed photoresist to remove an exposed photoresist film. In the method of forming a fine pattern of a semiconductor device comprising the step of forming a photosensitive film pattern formed of a photosensitive film formed of the method, the exposure mask is formed by inverting the image of the chromium pattern compared to the conventional exposure mask, the exposed photosensitive film and the amine The reaction process of the gas is carried out by maintaining a constant temperature in the chamber, the phenomenon Chung is performed with an alkali developer.
이하, 첨부된 도면을 참고로하여 본 발명을 상세히 설명하기로 한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
제2a도 내지 제2F도 그리고 제3도는 본 발명의 실시예에 따른 반도체 소자의 미세패턴 형성방법을 도시한 상세도이다.2A through 2F and FIG. 3 are detailed views illustrating a method of forming a fine pattern of a semiconductor device according to an exemplary embodiment of the present invention.
제2a도는 본 발명의 실시예에 따른 노광마스크를 도시한 평면도이다.2A is a plan view illustrating an exposure mask according to an embodiment of the present invention.
제2a도를 참조하면, 석영기판(21) 상부에 크롬패턴(22)을 형성한 노광마스크이다. 여기서, 노광마스크는 종래의 노광마스크와 상을 반전시켜 크롬패턴(22)을 형성한 것이다.Referring to FIG. 2A, an exposure mask in which a chrome pattern 22 is formed on a quartz substrate 21 is formed. Here, the exposure mask is formed by inverting the image with the conventional exposure mask to form the chrome pattern 22.
제2b도 내지 제2f는 제2a도의 ⓐ-ⓐ의 절단면을 따라 반도체기판(23) 상부의 감광막패턴(30) 형성공정을 도시한 단면도이다.2B through 2F are cross-sectional views illustrating a process of forming the photosensitive film pattern 30 on the semiconductor substrate 23 along the cut surface of FIG. 2A in FIG. 2A.
제2b도를 참조하면, 반도체기판(23) 상부에 형성된 감광막(24)을 제2a도의 노광마스크를 이용하여 노광시킨다. 이때, 노광된 감광막을 27이라 한다.Referring to FIG. 2B, the photosensitive film 24 formed on the semiconductor substrate 23 is exposed using the exposure mask of FIG. 2A. In this case, the exposed photosensitive film is referred to as 27.
제2c도를 참조하면, 제2b도의 공정후에 챔버(28) 안에서 아민기체(29)를 노광된 감광막(27)과 반응시킨다.Referring to FIG. 2C, the amine gas 29 is reacted with the exposed photosensitive film 27 in the chamber 28 after the process of FIG. 2B.
제2d도를 참조하면, 산성인 노광된 감광막(27)을 산과 아민의 결합물질로 형성된 감광막(30)으로 형성함으로써 알칼리 현상액에 대하여 불용 특성을 갖게한다. 그 후에, 전면노광을 실시한다.Referring to FIG. 2D, the acidic exposed photosensitive film 27 is formed of the photosensitive film 30 formed of a binding material of an acid and an amine, thereby making it insoluble in an alkaline developer. After that, full exposure is performed.
제2e도를 참조하면, 전면노광공정으로 제2B도의 노광공정시 노광되지 않은 감광막(24)을 노광된 감광막(27)으로 형성한다. 이때, 노광된 감광막(27)은 산성이다.Referring to FIG. 2E, an unexposed photosensitive film 24 is formed of the exposed photosensitive film 27 during the exposure process of FIG. 2B by the front exposure process. At this time, the exposed photosensitive film 27 is acidic.
제2f도를 참조하면, 알칼리 현상액을 이용하여 현상한다. 이때, 산성인 노광된 감광막(27)은 모두 제거된다. 그로인하여, 산과 아민의 결합물질로 형성된 감광막(30)패턴을 형성한다. 이때, 산과 아민의 결합물질로 형성된 감광막(30)은 알칼리 현상액에 불용특성을 갖고 있어 현상공정후 패턴을 형성한 것이다.Referring to FIG. 2F, development is carried out using an alkaline developer. At this time, all of the acidic exposed photosensitive film 27 is removed. As a result, a photosensitive film 30 pattern formed of a binding material of an acid and an amine is formed. At this time, the photosensitive film 30 formed of a binding material of an acid and an amine has an insoluble property in an alkaline developer and forms a pattern after the developing process.
제3도는 제2f도의 평면도이다. 여기서, 반도체기판(23) 상부에 형성된 감광막(30)패턴의 크기는 석영기판(21)에 형성된 크롬패턴(22)의 크기와 거의 비슷하다.3 is a plan view of FIG. 2F. Here, the size of the photosensitive film 30 pattern formed on the semiconductor substrate 23 is almost the same as the size of the chromium pattern 22 formed on the quartz substrate 21.
이상에서 설명한 바와같이 본 발명에 따른 반도체소자의 미세패턴 형성방법은, 상이 반전된 노광마스크를 이용하여 감광막을 부분노광시키고 노광된 부분에 아민을 반응시켜 산과 아민의 결합물질로 형성된 감광막을 형성한 다음, 전면노광을 실시하여 노광되지 않은 부분을 노광시키고 알칼리 현상액을 이용하여 현상공정을 실시함으로써 예정된 크기와 거의 같은 미세패턴을 형성하여 반도체소자의 신뢰성을 향상 및 고집적화를 가능하게 하는 잇점이 있다.As described above, in the method of forming a micropattern of a semiconductor device according to the present invention, the photoresist is partially exposed using an exposure mask having an inverted phase and an amine is reacted with the exposed portion to form a photoresist film formed of a binding material of an acid and an amine. Next, by exposing the entire surface to expose the unexposed portions and performing a developing process using an alkaline developer, a fine pattern almost the same as a predetermined size can be formed to improve the reliability and high integration of the semiconductor device.
Claims (4)
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| KR1019940030639A KR0140475B1 (en) | 1994-11-21 | 1994-11-21 | Fine patterning method of semiconductor device |
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| KR1019940030639A KR0140475B1 (en) | 1994-11-21 | 1994-11-21 | Fine patterning method of semiconductor device |
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| KR0140475B1 true KR0140475B1 (en) | 1998-07-15 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100429910B1 (en) * | 2001-09-12 | 2004-05-03 | 학교법인 포항공과대학교 | Method for high resolution patterning of by low energy electron beam |
| KR101966286B1 (en) | 2018-01-26 | 2019-04-05 | 조재석 | A toilet seat that prevents urine from splashing |
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1994
- 1994-11-21 KR KR1019940030639A patent/KR0140475B1/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100429910B1 (en) * | 2001-09-12 | 2004-05-03 | 학교법인 포항공과대학교 | Method for high resolution patterning of by low energy electron beam |
| KR101966286B1 (en) | 2018-01-26 | 2019-04-05 | 조재석 | A toilet seat that prevents urine from splashing |
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| KR960019546A (en) | 1996-06-17 |
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