KR100436771B1 - Method of forming photoresist pattern with good properties of semiconductor device - Google Patents

Method of forming photoresist pattern with good properties of semiconductor device Download PDF

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KR100436771B1
KR100436771B1 KR1019960075175A KR19960075175A KR100436771B1 KR 100436771 B1 KR100436771 B1 KR 100436771B1 KR 1019960075175 A KR1019960075175 A KR 1019960075175A KR 19960075175 A KR19960075175 A KR 19960075175A KR 100436771 B1 KR100436771 B1 KR 100436771B1
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pattern
reticle
forming
photoresist
semiconductor device
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KR1019960075175A
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Korean (ko)
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KR19980055938A (en
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이용석
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주식회사 하이닉스반도체
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: A method is provided to obtain a photoresist pattern with good properties by using a first reticle with a horizontal line pattern and a second reticle with a vertical line pattern. CONSTITUTION: A photoresist layer(4) is formed on a wafer(2). A first exposure is performed on the photoresist layer by using a first reticle with a horizontal line pattern. A second exposure is sequentially performed on the photoresist layer by using a second reticle with a vertical line pattern. A photoresist pattern for contact holes and pillar patterns is formed by developing the photoresist layer.

Description

반도체 소자의 감광막 패턴 형성방법Method of forming photoresist pattern of semiconductor device

본 발명은 감광막 패턴 형성방법에 관한 것으로 특히, 콘택홀 또는 필러(Pillar) 패턴 형성시 마스크로 사용되는 감광막 패턴을 형성하기 위한 반도체 소자의 감광막 패턴 형성방법에 관한 것이다.The present invention relates to a method for forming a photoresist pattern, and more particularly, to a method for forming a photoresist pattern of a semiconductor device for forming a photoresist pattern used as a mask when forming a contact hole or pillar pattern.

일반적으로 소자가 고집적화 됨에 따라 디자인 룰(Design Rule)이 작아지고 콘택홀 또는 콘택홀의 반대 형상인 필러패턴의 크기도 점점 작아지고 있다. 종래에는 반도체 제조 공정중 리소그래피(Lithography)에서 콘택홀 또는 필러 패턴을 형성시키기 위하여 콘택홀 또는 필러패턴이 형성된 레티클을 이용하여 웨이퍼 상에 형성된 감광막을 패터닝하였다. 이때, 형성되는 감광막 패턴은 손실 등으로 인하여 실제로 웨이퍼 상에 형성되는 콘택홀 또는 필러패턴 형상은 경사(Slope)를 갖게 되므로써 정확한 크기의 임계치수 조절이 어렵게 되는 문제가 있다.In general, as the device is highly integrated, design rules become smaller and the size of the filler pattern, which is the opposite shape of the contact hole or the contact hole, becomes smaller. Conventionally, in order to form a contact hole or a filler pattern in lithography during a semiconductor manufacturing process, a photosensitive film formed on a wafer is patterned by using a reticle in which the contact hole or filler pattern is formed. In this case, the contact photoresist pattern or the filler pattern shape actually formed on the wafer may have a slope due to a loss or the like, so that it is difficult to control the critical dimension of the correct size.

따라서 본 발명은 레티클 상에 수직방향의 라인패턴을 형성하고, 다른 레티클 상에 수평방향의 라인패턴을 형성한 후 상기 각각의 레티클을 이용하여 웨이퍼 상에 형성된 감광막을 각각 노광한 후 현상하여 보다 양호한 감광막 패턴을 얻을 수 있는 반도체 소자의 감광막 패턴 형성방법을 제공하는 것을 그 목적으로 한다.Therefore, in the present invention, a vertical line pattern is formed on a reticle, a horizontal line pattern is formed on another reticle, and each photosensitive film formed on a wafer is exposed and developed after each reticle. It is an object of the present invention to provide a method for forming a photosensitive film pattern of a semiconductor device capable of obtaining a photosensitive film pattern.

상술한 목적을 실현하기 위한 본 발명에 따른 감광막 패턴 형성방법은 웨이퍼상에 감광막을 형성하는 단계와, 제 1 레티클을 이용하여 감광막 상에 1차 노광을 실시하는 단계와, 제 2 레티클을 이용하여 감광막 상에 2차 노광을 실시하는 단계와, 감광막 상에 현상공정을 실시하여 감광막 패턴을 형성하는 단계로 이루어지며 상기 제 1 레티클은 기판 상에 일측방향으로 라인패턴이 다수개 형성되고, 상기 제 2 레티클은 제 1 레티클에 형성된 다수개의 라인패턴의 일측방향과 직각방향이 되도록 라인패턴이 다수개 형성된다. 그리고, 상기 제 1 레티클을 이용한 감광막의 1차 노광은 전체 감광막 두께의 1/2 길이로 노광된다.The method for forming the photoresist pattern according to the present invention for realizing the above object comprises the steps of forming a photoresist film on a wafer, performing a first exposure on the photoresist film using a first reticle, and using a second reticle. Forming a photoresist pattern by performing secondary exposure on the photoresist and developing the photoresist. The first reticle has a plurality of line patterns formed on one side of the substrate. The second reticle is formed with a plurality of line patterns so as to be perpendicular to one side direction of the plurality of line patterns formed on the first reticle. In addition, the primary exposure of the photosensitive film using the first reticle is exposed to half the length of the entire photosensitive film thickness.

도 la 및 1b는 라인패턴이 서로 직각이 되도록 형성된 각각의 레티클을 도시한 평면도.La and 1b are plan views showing respective reticles formed such that line patterns are perpendicular to each other;

도 2a 및 2b는 도 1a 및 1b에 각각 형성된 레티클을 사용하여 감광막을 노광한 상태를 도시한 소자의 단면도.2A and 2B are cross-sectional views of elements illustrating a state in which a photosensitive film is exposed using a reticle formed in FIGS. 1A and 1B, respectively.

도 3은 제 1 및 제 2 레티클을 이용하여 웨이퍼 상에 감광막 패턴을 형성한 평면도.3 is a plan view of a photosensitive film pattern formed on a wafer using first and second reticles.

<도면의 주요부분에 대한 기호설명><Description of Symbols on Main Parts of Drawing>

1A 및 1B : 기판 2 : 웨이퍼1A and 1B: Substrate 2: Wafer

4 : 감광막 4A 및 4B : 노광부분4 photosensitive film 4A and 4B exposure part

4C : 감광막 패턴4C: photoresist pattern

이하, 본 발명에 따른 감광막 패턴 형성방법을 첨부한 도면을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, the photosensitive film pattern forming method according to the present invention will be described in detail with reference to the accompanying drawings.

먼저, 본 실시예의 설명을 간략화 하기 위하여 웨이퍼 상에 콘택홀을 형성하기 위한 감광막 패턴을 형성하는 방법을 설명하기로 한다. 도 1a 및 1b는 라인패턴이 서로 직각이 되도록 형성된 각각의 레티클을 도시한 평면도이다.First, to simplify the description of this embodiment, a method of forming a photoresist pattern for forming a contact hole on a wafer will be described. 1A and 1B are plan views illustrating respective reticles formed so that line patterns are perpendicular to each other.

도 1a는 기판(1A) 상에 라인패턴(5A)이 일측방향으로 다수개 형성된 제 1 레티클을 도시하고 있으며 웨이퍼(2) 상에 형성될 콘택홀의 일측방향으로의 간격과 일치하도록 형성된다.FIG. 1A illustrates a first reticle in which a plurality of line patterns 5A are formed in one direction on a substrate 1A, and is formed to coincide with a distance in one direction of contact holes to be formed on the wafer 2.

도 1b는 제 1 레티클에 형성된 라인패턴(5A)의 일측방향과 직각방향이 되도록 기판(1B)에 라인패턴(5B)이 다수개 형성된 제 2 레티클을 도시하고 있으며 웨이퍼(2) 상에 형성될 콘택홀의 일측방향과 직각방향으로의 간격과 일치하도록 형성된다. 상기 제 1 및 제 2 레티클에 형성된 라인패턴(5A 및 5B)의 각도는 각각 0° 및 90° 또는 45° 및 135° 로서 직각이 된다.FIG. 1B illustrates a second reticle in which a plurality of line patterns 5B are formed on the substrate 1B so as to be perpendicular to one side direction of the line pattern 5A formed on the first reticle and to be formed on the wafer 2. It is formed to coincide with the interval in the direction perpendicular to the one side direction of the contact hole. The angles of the line patterns 5A and 5B formed on the first and second reticles are at right angles as 0 ° and 90 ° or 45 ° and 135 °, respectively.

도 2a는 웨이퍼(2) 상에 형성된 감광막(4)을 도 1a에 도시한 바와같은 제 1 레티클을 이용하여 1차 노광 한 상태를 도시한다. 4A는 감광막(4)이 1차 노광된 부분을 도시하며 전체 감광막 두께의 1/2 깊이만큼 노광된다.FIG. 2A shows a state in which the photosensitive film 4 formed on the wafer 2 is first exposed using a first reticle as shown in FIG. 1A. 4A shows the portion where the photoresist film 4 is first exposed and is exposed by half the depth of the entire photoresist film thickness.

도 2b는 웨이퍼(2) 상의 1차 노광된 감광막(4)을 도 1b에 도시한 바와같은 제 2 레티클을 이용하여 2차 노광한 상태를 도시한다. 4B는 감광막(4)이 2차 노광된 부분을 도시한다. 화살표 A로 도시된 부분의 감광막(4)은 현상공정을 거쳐 완전히 제거될 부분으로써 웨이퍼(2) 상의 콘택홀이 형성될 부분을 나타낸다.FIG. 2B shows a state in which the first exposed photosensitive film 4 on the wafer 2 is subjected to the second exposure using a second reticle as shown in FIG. 1B. 4B shows a portion where the photosensitive film 4 is secondarily exposed. The photosensitive film 4 in the portion shown by the arrow A represents a portion where the contact hole on the wafer 2 is to be formed as the portion to be completely removed through the developing process.

도 3은 제 1 및 제 2 레티클을 이용하여 웨이퍼(2) 상에 형성된 감광막(4)에 각각 1차 및 2차 노광공정을 실시한 후 현상공정으로 제거하여 감광막 패턴(4C)을 형성한 상태를 도시한다. 화살표 B로 도시된 부분은 2번의 노광공정에 의해 감광막(4)이 완전히 제거되어 웨이퍼(2)의 표면이 노출된 상태를 나타낸다.FIG. 3 shows a state in which the photosensitive film pattern 4C is formed by performing a first and second exposure process on the photoresist film 4 formed on the wafer 2 using the first and second reticles, respectively, and then removing the photoresist film by the development process. Illustrated. The portion shown by the arrow B represents a state in which the photosensitive film 4 is completely removed by two exposure steps, thereby exposing the surface of the wafer 2.

본 실시예에서는 설명의 간략화를 위하여 콘택홀을 형성하는 경우의 예를 설명하였으나 본 발명은 이것에 한정되는 것은 아니다. 즉, 필러패턴을 형성하는 경우도 상술한 바와 동일하다.In this embodiment, for the sake of simplicity, an example of forming a contact hole has been described, but the present invention is not limited thereto. That is, the case where a filler pattern is formed is also the same as that mentioned above.

상술한 바와같이 본 발명에 의하면 레티클 상에 수직방향의 라인패턴을 형성하고, 다른 레티클 상에 수평방향의 라인패턴을 형성한 후 상기 각각의 레티클을 이용하여 웨이퍼 상에 형성된 감광막을 각각 노광한 후 현상하여 양호한 감광막 패턴을 얻을 수 있는 효과가 있다.As described above, according to the present invention, a vertical line pattern is formed on a reticle, a horizontal line pattern is formed on another reticle, and each photosensitive film formed on a wafer is exposed using the respective reticles. It develops and there is an effect which can obtain a favorable photosensitive film pattern.

Claims (7)

반도체 소자의 감광막 패턴 형성방법에 있어서,In the photosensitive film pattern forming method of a semiconductor device, 웨이퍼 상에 감광막을 형성하는 단계;Forming a photoresist film on the wafer; 라인패턴의 제 1 레티클을 이용하여 감광막 상에 1차 노광을 실시하는 단계;Performing primary exposure on the photosensitive film by using the first reticle of the line pattern; 라인패턴의 제 2 레티클을 이용하여 감광막 상에 2차 노광을 실시하는 단계;Performing secondary exposure on the photosensitive film using the second reticle of the line pattern; 및And 현상공정을 실시하여 콘택홀 및 필러 패턴용 감광막 패턴을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 감광막 패턴 형성방법.A method for forming a photoresist pattern of a semiconductor device, comprising the steps of forming a photoresist pattern for contact holes and a filler pattern by performing a developing step. 제 1 항에 있어서,The method of claim 1, 상기 제 1 레티클은 기판 상에 일측방향으로 라인패턴이 다수개 형성되는 것을 특징으로 하는 반도체 소자의 감광막 패턴 형성방법.The first reticle is a photosensitive film pattern forming method of the semiconductor device, characterized in that a plurality of line patterns are formed in one direction on the substrate. 제 1 항에 있어서,The method of claim 1, 상기 제 2 레티클은 제 1 레티클에 형성된 다수개의 라인패턴의 일측방향과 직각방향이 되도록 라인패턴이 다수개 형성되는 것을 특징으로 하는 반도체 소자의 감광막 패턴 형성방법.And the second reticle is formed with a plurality of line patterns so as to be in a direction perpendicular to one side direction of the plurality of line patterns formed on the first reticle. 제 1 항에 있어서,The method of claim 1, 상기 제 1 및 제 2 레티클은 각각 0° 및 90° 의 각도로 형성된 라인패턴을 갖는 것을 특징으로 하는 반도체 소자의 감광막 패턴 형성방법.The first and second reticles have a line pattern formed at an angle of 0 ° and 90 °, respectively. 제 1 항에 있어서,The method of claim 1, 상기 제 1 및 제 2 레티클은 각각 45° 및 135° 의 각도로 형성된 라인패턴을 갖는 것을 특징으로 하는 반도체 소자의 감광막 패턴 형성방법.The first and second reticles have a line pattern formed at an angle of 45 ° and 135 °, respectively. 제 1 항에 있어서,The method of claim 1, 상기 제 1 레티클을 이용한 감광막의 1차 노광은 전체 감광막 두께의 1/2 깊이로 노광되는 것을 특징으로 하는 반도체 소자의 감광막 패턴 형성방법.The first exposure of the photoresist film using the first reticle is exposed to a depth of 1/2 of the total photoresist film thickness, the method of forming a photoresist pattern of a semiconductor device. 제 1 항에 있어서,The method of claim 1, 상기 감광막 패턴은 콘택홀 및 필러패턴 중 어느 하나의 패턴인 것을 특징으로 하는 반도체 소자의 감광막 패턴 형성방법.The photoresist pattern is a method of forming a photoresist pattern of a semiconductor device, characterized in that any one of a contact hole and a filler pattern.
KR1019960075175A 1996-12-28 1996-12-28 Method of forming photoresist pattern with good properties of semiconductor device KR100436771B1 (en)

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KR1019960075175A KR100436771B1 (en) 1996-12-28 1996-12-28 Method of forming photoresist pattern with good properties of semiconductor device

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KR19980055938A KR19980055938A (en) 1998-09-25
KR100436771B1 true KR100436771B1 (en) 2004-08-06

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KR930024094A (en) * 1992-12-10 1993-12-21 김광호 Mask pattern and method of forming fine pattern using the same

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KR930024094A (en) * 1992-12-10 1993-12-21 김광호 Mask pattern and method of forming fine pattern using the same

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