JPH05326358A - Method for forming fine pattern - Google Patents
Method for forming fine patternInfo
- Publication number
- JPH05326358A JPH05326358A JP4151530A JP15153092A JPH05326358A JP H05326358 A JPH05326358 A JP H05326358A JP 4151530 A JP4151530 A JP 4151530A JP 15153092 A JP15153092 A JP 15153092A JP H05326358 A JPH05326358 A JP H05326358A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- light
- fine pattern
- exposure
- negative photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、微細パターン形成方
法、特に簡単な工程で微細コンタクトホールを正確に形
成することのできる新規な微細パターン形成方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fine pattern forming method, and more particularly to a novel fine pattern forming method capable of accurately forming a fine contact hole by a simple process.
【０００２】[0002]
【従来の技術】ＬＳＩは高集積化の一途を辿っており、
それに伴って微細コンタクトホールを正確に形成する技
術の重要性が高まっている。ところで、現在コンタクト
ホールの形成は、一般に、フォトレジストとしてポジ型
フォトレジストを用い、露光光線としてｇ線（波長４３
６ｎｍ）あるいはｉ線（波長３６５ｎｍ）を用いてのフ
ォトリソグラフィ技術によって行われている。2. Description of the Related Art LSIs are becoming highly integrated,
Along with this, the importance of a technique for accurately forming a fine contact hole is increasing. By the way, at present, contact holes are generally formed by using a positive photoresist as a photoresist and using g rays (wavelength 43
6 nm) or i-line (wavelength 365 nm) is used for the photolithography technique.
【０００３】尚、ｉ線、ｇ線を露光光線とする微細パタ
ーン形成方法においてフォトレジストとして今日ポジ型
フォトレジストが多く用いられる理由は、従来のネガ型
フォトレジストが環化ゴム（ポリイソプレン）に架橋材
を加えたものであり、基板との密着性が高くウェットエ
ッチングに適しているが、芳香環の含有量が少ないため
ドライエッチング耐性が低く、また、現像で膨潤するた
め解像度が制約されることに対して、ポジ型フォトレジ
ストにはそのような欠点がないからである。即ち、ポジ
型フォトレジストは、溶解抑止効果を持ち光照射により
アルカリ現像液に可溶化する性質を持つナフトキノンジ
アジドスルホン酸エステル化合物と、もともとアルカリ
現像液に溶解するクレーゾールノボラック樹脂の混合物
であり、現像による膨潤がないため高い解像力が得られ
るうえに高いドライエッチング耐性を有する。従って、
今日微細パターンの形成には非常に多く用いられるので
ある。尤も、ポジ型フォトレジストは、基板との密着性
が低いので、ウェットエッチングの時代においては基板
との密着性の高いネガ型フォトレジストに主流の座を譲
ったが、ドライエッチング時代になると密着性が低いこ
とが致命的ではなくなったので主流の座を占めるに至っ
たのである。Incidentally, the reason why a positive photoresist is often used today as a photoresist in a fine pattern forming method using i rays and g rays as exposure rays is that a conventional negative photoresist is used as a cyclized rubber (polyisoprene). It has a cross-linking agent and is suitable for wet etching because it has high adhesion to the substrate, but its dry etching resistance is low due to the low aromatic ring content, and resolution is limited due to swelling during development. In contrast, the positive photoresist does not have such a defect. That is, the positive photoresist is a mixture of a naphthoquinone diazide sulfonic acid ester compound having a dissolution inhibiting effect and having a property of being solubilized in an alkali developing solution by light irradiation, and a cresol novolak resin which is originally soluble in the alkali developing solution, Since it does not swell due to development, it has high resolution and high dry etching resistance. Therefore,
Today, it is very often used to form fine patterns. However, since the positive photoresist has low adhesion to the substrate, in the wet etching era, the negative photoresist, which has high adhesiveness to the substrate, was given the mainstream position, but in the dry etching era, the adhesiveness was improved. It became less of a fatality because it was low, so it became the mainstream.
【０００４】ところで、微細コンタクトホール、特に矩
形の微細コンタクトホールをより正確に形成する方法と
して、特開昭６２−１１５７２２号公報、特開昭６２−
１０２５３１号公報、特開昭６３−２０５９１７公報に
示すように、フォトレジスト層をパターニングすること
によりパターンの異なるレジストマスク層を二層形成
し、該二層のレジストマスク層をマスクとして被エッチ
ング物をエッチングする方法がある。この方法は、二層
のレジストマスク層をそのマスクパターンが直交するよ
うに形成しこれをマスクとしてエッチングすることによ
り矩形状の開口を角部が丸味を帯びないように形成する
ことができるという利点を有する。By the way, as a method for forming a fine contact hole, particularly a rectangular fine contact hole more accurately, there are disclosed in Japanese Patent Laid-Open Nos. 62-115722 and 62-62.
As disclosed in Japanese Patent Laid-Open No. 102531 and Japanese Patent Application Laid-Open No. 63-205917, two layers of resist mask layers having different patterns are formed by patterning a photoresist layer, and an object to be etched is formed using the two resist mask layers as a mask. There is a method of etching. This method has an advantage that a rectangular opening can be formed so that the corners are not rounded by forming a two-layer resist mask layer so that the mask patterns are orthogonal to each other and etching using this as a mask. Have.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、従来の
二層のレジストマスク層をそのマスクパターンが直交す
るように形成しこれをマスクとしてエッチングすること
により矩形状の開口を角部が丸味を帯びないように形成
するという微細パターン形成方法には、二層のレジスト
マスク層を形成しなければならないので、工程数が多く
なり製造コストが高くなるという問題があった。即ち、
レジストマスク層の形成には、フォトレジスト膜のコー
ティング、露光、現像、プリベーク、ポストベース等多
くの工程が必要であり、１回のパターン形成のためにそ
のようなレジストマスク層の形成を２回も必要とするの
で非常に工程数が多くなるのである。However, by forming a conventional two-layer resist mask layer so that the mask patterns are orthogonal to each other and etching using this as a mask, a rectangular opening does not have rounded corners. In the fine pattern forming method of forming as described above, since two resist mask layers have to be formed, there is a problem that the number of steps increases and the manufacturing cost increases. That is,
The formation of the resist mask layer requires many steps such as coating of a photoresist film, exposure, development, pre-baking and post base, and formation of such a resist mask layer is performed twice for one pattern formation. Therefore, the number of steps is very large.
【０００６】そこで、本願発明者は、微細コンタクトホ
ールの形成工程の工程数の低減を図るべく模索したとこ
ろ、フォトレジストとしてネガ型フォトレジストを用い
れば、遮光膜が互いに直交するマスクを用いて２回露光
することによりそのネガ型フォトレジストの２つのマス
クの遮光膜が交差した部分のみが非感光となり、現像に
よりその交差部分のみに抜けが生じるようにできるとい
う着想を得た。これは、１回の現像で前述の特開昭６２
−１０２５３１号公報で紹介されたところの二層のレジ
ストマスク層をそのマスクパターンが直交するように形
成しこれをマスクとしてエッチングすることにより矩形
状の開口を角部が丸味を帯びないように形成するという
技術と同じような微細加工効果を得ることができるので
優れた着想といえる。Therefore, the inventor of the present application sought to reduce the number of steps of forming the fine contact hole. When a negative photoresist was used as the photoresist, a mask having light-shielding films orthogonal to each other was used. It was conceived that by exposing twice, only the intersecting portions of the light-shielding films of the two masks of the negative photoresist become non-photosensitive, and it is possible to cause a gap at only the intersecting portions by development. This is the same as that described in JP-A-62 / 62
No. 102531, the two-layer resist mask layer is formed so that the mask patterns are orthogonal to each other, and etching is performed using this as a mask to form a rectangular opening so that the corners are not rounded. It can be said that it is an excellent idea because it can obtain the same fine processing effect as the technology of doing.
【０００７】ところが、その着想の実現には従来ドライ
エッチングに不向きとされたネガ型フォトレジストを用
いることが不可欠であり、それが隘路となって立ちはだ
かった。しかし、本願発明者が研究を重ねたところ、最
近現われた化学増幅系レジストはネガ型であってもドラ
イエッチングにレジストマスク層として充分に用いるこ
とができ、しかもエキシマレーザ光による露光に適し、
微細パターン形成に適することが判明し、その着想の実
現が可能になった。本発明はその結果として生まれたも
のである。However, in order to realize the idea, it is indispensable to use a negative photoresist which is conventionally unsuitable for dry etching, and it has been a bottleneck. However, as a result of repeated research by the inventor of the present application, the recently emerged chemically amplified resist can be sufficiently used as a resist mask layer for dry etching even if it is a negative type, and is suitable for exposure by excimer laser light.
It became clear that it was suitable for forming fine patterns, and the idea became possible. The present invention was born as a result.
【０００８】即ち、本発明は簡単な工程で微細コンタク
トホールを正確に形成することのできる新規な微細パタ
ーン形成方法を提供しようとするものである。That is, the present invention aims to provide a novel fine pattern forming method capable of accurately forming a fine contact hole by a simple process.
【０００９】[0009]
【課題を解決するための手段】本発明微細パターン形成
方法は、被エッチング物上のネガ型フォトレジスト層
を、線状遮光膜が互いに交差するマスクを用いての２回
の露光工程により露光し、その後、現像し、しかる後、
上記ネガ型フォトレジスト層をマスクとして上記被エッ
チング物をエッチングすることを特徴とする。According to the method for forming a fine pattern of the present invention, a negative photoresist layer on an object to be etched is exposed by two exposure steps using a mask in which linear light-shielding films intersect with each other. , Then develop, then,
The object to be etched is etched using the negative photoresist layer as a mask.
【００１０】[0010]
【作用】本発明微細パターン形成方法によれば、１つの
ネガ型フォトレジスト層に対して線状遮光膜が互いに交
差するマスクを用いて２回露光するので、その２つのマ
スクの遮光膜の交差する部分と対応した部分のみが非感
光となり、現像によりレジストの抜け部分となる。従っ
て、１つのレジスト膜により従来における二層のレジス
ト膜と同じエッチングマスク効果を有するレジストマス
クを形成できる。依って、現像は１回で済み、製造工程
が従来よりも少なくて済む。According to the fine pattern forming method of the present invention, one negative type photoresist layer is exposed twice by using a mask in which linear light-shielding films intersect each other. Therefore, the light-shielding films in the two masks intersect each other. Only the portion corresponding to the portion to be exposed becomes non-photosensitive, and becomes a resist missing portion due to development. Therefore, a resist mask having the same etching mask effect as the conventional two-layer resist film can be formed with one resist film. Therefore, the development can be performed only once, and the number of manufacturing steps can be reduced as compared with the conventional case.
【００１１】[0011]
【実施例】以下、本発明微細パターン形成方法を図示実
施例に従って詳細に説明する。図１（Ａ）乃至（Ｅ）は
本発明微細パターン形成方法の一つの実施例を工程順に
示す斜視図である。 （Ａ）半導体基板１表面の被エッチング物たる絶縁膜２
上にネガ型フォトレジスト３を塗布し、該ネガ型フォト
レジスト３に対して第１のマスク４を介して第１回目の
露光処理を施す。５、５、５は該第１のマスク４の線状
の遮光膜である。図１（Ａ）は第１回目の露光工程終了
後の状態を示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The fine pattern forming method of the present invention will be described in detail below with reference to the illustrated embodiments. 1A to 1E are perspective views showing one embodiment of the method for forming a fine pattern of the present invention in the order of steps. (A) Insulating film 2 which is an object to be etched on the surface of semiconductor substrate 1
A negative type photoresist 3 is applied on the negative type photoresist 3, and the negative type photoresist 3 is subjected to a first exposure process through a first mask 4. Reference numerals 5, 5, and 5 are linear light-shielding films of the first mask 4. FIG. 1A shows a state after the first exposure process is completed.
【００１２】尚、ネガ型フォトレジスト３としては化学
増幅系レジストが好適である。というのは、ネガ型であ
るにも拘らずドライエッチング用のマスクとして用いる
ことが可能であると共に、ＫｒＦ等のエキシマレーザビ
ームによって露光を行うことができ、０．３５μｍ口の
微細コンタクトホールも形成できるからである。即ち、
従来のｇ線、ｉ線により露光するポジ型フォトレジスト
を用いるフォトリソグラフィによれば、０．５μｍ口の
微細コンタクトホールも精度良く形成することができ
ず、角部が丸味を帯びた形状の微細コンタクトホールに
なってしまう。しかるに、化学増幅系レジストネガ型フ
ォトレジストを用いれば、波長がｇ線（４３６ｎｍ）、
ｉ線（３６５ｎｍ）よりも相当に短かいＫｒＦエキシマ
レーザビーム（波長２４８ｎｍ）により露光することが
でき、より一層の微細加工が可能になるのである。従っ
て、露光光線としてはＫｒＦエキシマレーザビームを用
いることが微細コンタクトホールの微細化という面で好
ましいのである。A chemically amplified resist is suitable as the negative photoresist 3. This is because it can be used as a mask for dry etching despite being a negative type, and it can be exposed by an excimer laser beam such as KrF, and a fine contact hole of 0.35 μm is also formed. Because you can. That is,
According to the conventional photolithography using a positive photoresist exposed by g-line and i-line, it is not possible to accurately form a fine contact hole having a 0.5 μm opening, and a fine corner-shaped fine contact hole is formed. It becomes a contact hole. However, if a chemically amplified resist negative photoresist is used, the wavelength is g-line (436 nm),
The KrF excimer laser beam (wavelength 248 nm), which is considerably shorter than the i-line (365 nm), can be used for exposure, and further fine processing becomes possible. Therefore, it is preferable to use the KrF excimer laser beam as the exposure light beam in terms of miniaturization of the fine contact hole.
【００１３】この第１回目の露光工程で用いる第１のマ
スク４は線状の遮光膜（例えばクロムからなる）５、
５、５を有し、６、６、６はネガ型フォトレジスト層３
の遮光膜５、５、５の蔭になった非感光部分、７は感光
部分である。尚、第１のマスク４及び次に述べる第２の
マスク８は半導体基板１の表面上に遮光膜５、５、５
（９、９、９）が縮小投影されるので、遮光膜５、５、
５（９、９、９）とその影６、６、６（１０、１０、１
０）とは当然に大きさが異なり、遮光膜５、５、５
（９、９、９）の方が影６、６、６（１０、１０、１
０）よりも何倍か大きいが、図面においてはマスクとそ
の影との対応関係を解り易くするため等しい大きさであ
るかのように示した。The first mask 4 used in the first exposure step is a linear light-shielding film (made of chromium, for example) 5,
5, 5 and 6, 6 and 6 are negative photoresist layers 3
The light-shielding films 5, 5, and 5 are the non-exposed portions, and 7 is the exposed portion. The first mask 4 and the second mask 8 described below are provided on the surface of the semiconductor substrate 1 with the light shielding films 5, 5, 5.
Since (9, 9, 9) is reduced and projected, the light shielding films 5, 5 ,,
5 (9, 9, 9) and its shadows 6, 6, 6 (10, 10, 1)
The size is different from that of 0), and the light-shielding films 5, 5, 5
(9, 9, 9) has shadows 6, 6, 6 (10, 10, 1)
Although it is several times larger than 0), it is shown as if they are of equal size in order to make it easier to understand the correspondence between the mask and its shadow in the drawing.
【００１４】（Ｂ）次に、図１（Ｂ）に示すように第２
のマスク８を用いて第２回目の露光工程を行う。露光条
件は第１回目の露光工程のそれと略同じで良く、従っ
て、同じ露光装置を用いマスクを変えて露光を２回連続
的に行えば良い。但し、この第２回目の露光工程におい
て用いる第２のマスク８は、その遮光膜９、９、９が第
１回目の露光工程において用いた第１のマスク４の遮光
膜５、５、５と交差、特に直交する向きに形成されてい
るのである。より正確にいえば、第１のマスク４と第２
のマスク８の遮光膜５、５、５と９、９、９とは、ネガ
型フォトレジスト３上につくる影６、６、６と１０、１
０、１０とが交差、特に直交するような向きに形成され
ている。(B) Next, as shown in FIG.
The second exposure step is performed using the mask 8 of FIG. The exposure conditions may be substantially the same as those in the first exposure step, and therefore the same exposure apparatus may be used and the exposure may be performed twice continuously by changing the mask. However, in the second mask 8 used in the second exposure process, the light-shielding films 9, 9, 9 are the same as the light-shielding films 5, 5, 5 of the first mask 4 used in the first exposure process. They are formed so that they intersect each other, and particularly at right angles. To be more precise, the first mask 4 and the second mask 4
The light-shielding films 5, 5, 5 and 9, 9, 9 of the mask 8 are shadows 6, 6, 6 and 10, 1 formed on the negative photoresist 3.
0 and 10 are formed so as to intersect, especially orthogonally.
【００１５】従って、第２回目の露光工程の終了段階
で、第１回目の露光工程によって生じた第１のマスク４
の遮光膜５、５、５による影６、６、６と、第２回目の
露光工程によって生じた第２のマスク８の遮光膜９、
９、９による影１０、１０１、１０との交差（直交）す
る矩形部分１１、１１、１１においてのみネガ型フォト
レジスト３が非感光となり、それ以外の部分７が感光部
分となる。Therefore, at the end stage of the second exposure process, the first mask 4 produced by the first exposure process.
Shadows 6, 6, 6 by the light-shielding films 5, 5, 5 and the light-shielding film 9 of the second mask 8 generated by the second exposure step,
The negative photoresist 3 becomes non-photosensitive only in the rectangular portions 11, 11, 11 intersecting (orthogonal) with the shadows 10, 101, 10 due to 9, 9 and the other portions 7 become photosensitive portions.
【００１６】（Ｃ）次に、図１（Ｃ）に示すように現像
処理する。すると、ネガ型フォトレジスト３の上記非感
光部分１１、１１、１１のみが除去され、矩形の窓開部
１２、１２、１２が形成される。 （Ｄ）その後、図１（Ｄ）に示すように、ネガ型フォト
レジスト３をマスクとして被エッチング物たる絶縁膜２
をドライエッチングする。すると、絶縁膜２は、窓開部
１２、１２、１２下にあたる部分がエッチングされ、矩
形の微細コンタクトホール１３、１３、１３が形成され
る。 （Ｅ）しかる後、ネガ型フォトレジスト３を除去すると
図１（Ｅ）に示す状態に、即ち、矩形の微細コンタクト
ホール１３、１３、１３が形成された絶縁膜２が露出し
た状態になる。(C) Next, as shown in FIG. 1C, development processing is performed. Then, only the non-photosensitive portions 11, 11, 11 of the negative photoresist 3 are removed, and rectangular window openings 12, 12, 12 are formed. (D) After that, as shown in FIG. 1D, the negative photoresist 3 is used as a mask to form an insulating film 2 as an etching target.
Dry etching. Then, the insulating film 2 is etched at the portions below the window openings 12, 12, 12 to form rectangular fine contact holes 13, 13, 13. (E) After that, when the negative photoresist 3 is removed, the state shown in FIG. 1E is obtained, that is, the insulating film 2 having the rectangular fine contact holes 13, 13, 13 formed therein is exposed.
【００１７】本微細パターン形成方法によれば、１つの
ネガ型フォトレジスト層３に対する遮光膜５、５、５と
９、９、９が交差するマスク４、８を用いての２回の露
光により交差部分１１、１１、１１のみを非感光部分と
して矩形の窓開部１２、１２、１２を形成し、その後、
該ネガ型フォトレジスト層３をマスクとして被エッチン
グ物たる絶縁膜２をドライエッチングするので、矩形の
微細コンタクトホール１３、１３、１３を形成すること
ができる。そして、このような微細パターン形成方法に
よれば、第１のマスク４と第２のマスク８の遮光膜を実
質的にクロスさせた２回の露光を行うという手法を採る
ので、露光エネルギーの寸法に対する変動は、２ｍＪ／
ｃｍ2 の露光エネルギー変動で、０．４μｍＬ／Ｓ（ラ
インスペース比）の場合、線幅変動が０．０４μｍ程度
に小さくできる。According to the present fine pattern forming method, one negative type photoresist layer 3 is exposed twice by using masks 4 and 8 where the light shielding films 5, 5, 5 and 9, 9, 9 intersect. The rectangular window openings 12, 12, 12 are formed with only the intersecting portions 11, 11, 11 as the non-photosensitive portion, and thereafter,
Since the insulating film 2 to be etched is dry-etched using the negative photoresist layer 3 as a mask, rectangular fine contact holes 13, 13, 13 can be formed. Further, according to such a fine pattern forming method, since the method of performing the exposure twice with the light shielding films of the first mask 4 and the second mask 8 being substantially crossed is used, the size of the exposure energy Is 2mJ /
When the exposure energy fluctuation is cm 2 and 0.4 μmL / S (line space ratio), the line width fluctuation can be reduced to about 0.04 μm.
【００１８】従って、通常の微細パターン形成方法、即
ちレジスト層に直接１回の露光、現像により微細コンタ
クトホールを形成する場合に比較してエネルギー変動に
対する寸法変動の比が小さい。また、使用するレジスト
の解像度等の違い、露光光線の波長等の違いを拾象すれ
ば、特開昭６２−１１５７２２号公報、特開昭６２−１
０２５３１号公報、特開昭６３−２０５９１７公報に紹
介された二層のレジストマスク層をそのマスクパターン
が直交するように形成しこれをマスクとしてエッチング
することにより矩形状の開口を角部が丸味を帯びないよ
うに形成する技術と同程度の矩形微細コンタクトホール
再現性を得ることができる。しかし、かかる技術はすべ
てパターンの異なるレジストマスク層を２回形成する必
要があるため、露光工程だけでなく現像工程も２回必要
であるが、本微細パターン形成方法によれば露光工程の
み２回必要であるに過ぎず、現像工程は１回で済む。従
って、工程数の低減を図りつつ微細コンタクトホールを
角部が丸味を帯びないように形成するようにできる。Therefore, the ratio of the dimensional fluctuation to the energy fluctuation is small as compared with the usual fine pattern forming method, that is, the case where the fine contact hole is directly formed on the resist layer once by exposure and development. Further, by taking into consideration the difference in resolution of the resist used, the wavelength of the exposure light beam, etc., JP-A-62-115722 and JP-A-62-1 are available.
No. 02531, Japanese Patent Laid-Open No. 63-205917, two resist mask layers are formed so that the mask patterns are orthogonal to each other, and etching is performed using this as a mask to form a rectangular opening with rounded corners. It is possible to obtain the reproducibility of a rectangular fine contact hole to the same degree as that of the technique of forming without being tinged. However, in all of these techniques, it is necessary to form a resist mask layer having a different pattern twice, so that not only the exposure step but also the development step is required. However, according to the present fine pattern forming method, only the exposure step is performed twice. It is only necessary and requires only one development step. Therefore, it is possible to reduce the number of steps and form the fine contact holes so that the corners are not rounded.
【００１９】[0019]
【発明の効果】請求項１の微細パターン形成方法は、被
エッチング物上のネガ型フォトレジスト層を、線状遮光
膜が互いに交差するマスクを用いての２回の露光工程に
より露光し、その後、現像し、しかる後、上記ネガ型フ
ォトレジスト層をマスクとして上記被エッチング物を形
成することを特徴とするものである。従って、請求項１
の微細パターン形成方法によれば、１つのネガ型フォト
レジスト層に対して線状遮光膜が互いに交差するマスク
を用いて２回露光するので、その２つのマスクの遮光膜
の交差する部分と対応した部分のみが非感光となり、現
像によりレジストの抜け部分となる。従って、１つのレ
ジスト膜により従来における二層のレジスト膜と同じエ
ッチングマスク効果を有するレジストマスクを形成でき
る。依って、現像は１回で済み、製造工程が従来よりも
少なくて済む。According to the method of forming a fine pattern of claim 1, the negative photoresist layer on the object to be etched is exposed by two exposure steps using a mask in which the linear light-shielding films intersect with each other, and thereafter. Then, the negative photoresist layer is developed, and then the object to be etched is formed using the negative photoresist layer as a mask. Therefore, claim 1
According to the method for forming a fine pattern described in (1), since exposure is performed twice for one negative photoresist layer using a mask in which linear light-shielding films intersect with each other, it corresponds to a portion in which the light-shielding films in the two masks intersect. Only the exposed portion becomes non-photosensitive and becomes a resist missing portion due to development. Therefore, a resist mask having the same etching mask effect as the conventional two-layer resist film can be formed with one resist film. Therefore, the development can be performed only once, and the number of manufacturing steps can be reduced as compared with the conventional case.
【００２０】請求項２の微細パターン形成方法は、請求
項１の微細パターン形成方法において、ネガ型フォトレ
ジスト層として化学増幅系レジストを用いることを特徴
とするものである。従って、請求項２の微細パターン形
成方法によれば、化学増幅系レジストがドライエッチン
グ耐性を有するので、ネガ型フォトレジストであっても
支障なくドライエッチング用レジストマスクとして用い
ることができ、延いては請求項１の微細パターン形成方
法を支障なく実施できる。The method for forming a fine pattern according to claim 2 is the method for forming a fine pattern according to claim 1, characterized in that a chemically amplified resist is used as the negative photoresist layer. Therefore, according to the fine pattern forming method of claim 2, since the chemically amplified resist has dry etching resistance, even a negative photoresist can be used as a resist mask for dry etching without any problem, and The fine pattern forming method according to claim 1 can be carried out without any trouble.
【００２１】請求項３の微細パターン形成方法は、請求
項１又は２の微細パターン形成方法において、露光光線
としてエキシマレーザ光線を用いることを特徴とするも
のである。従って、請求項３の微細パターン形成方法に
よれば、エキシマレーザ光線がｇ線やｉ線よりも波長が
短かく、しかも化学増幅系レジストの露光にも適合する
のでより微細な矩形コンタクトホールの形成が可能にな
る。The fine pattern forming method according to a third aspect is the fine pattern forming method according to the first or second aspect, wherein an excimer laser beam is used as the exposure beam. Therefore, according to the method of forming a fine pattern of claim 3, the excimer laser beam has a shorter wavelength than the g-line and the i-line and is suitable for exposure of a chemically amplified resist, so that a finer rectangular contact hole is formed. Will be possible.
【図１】（Ａ）乃至（Ｅ）は本発明微細パターン形成方
法の一つの実施例を工程順に示す斜視図である。1A to 1E are perspective views showing one embodiment of a fine pattern forming method of the present invention in the order of steps.
１ 基板 ２ 被エッチング物（絶縁膜） ３ ネガ型フォトレジスト層 ４ 第１のマスク ５ 遮光膜 ６ 遮光膜の影 ８ 第２のマスク ９ 遮光膜 １０ 遮光膜の影 １１ 非感光部分 １２ 窓開部 １３ 微細コンタクトホール DESCRIPTION OF SYMBOLS 1 Substrate 2 Object to be etched (insulating film) 3 Negative photoresist layer 4 First mask 5 Light-shielding film 6 Shadow of light-shielding film 8 Second mask 9 Light-shielding film 10 Shadow of light-shielding film 11 Non-photosensitive area 12 Window opening 13 Fine contact hole
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/28 Ｌ 9055−4Ｍ 21/302 Ｊ 8518−4Ｍ 21/3205 7735−4Ｍ Ｈ０１Ｌ 21/88 Ｆ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI Technical display location H01L 21/28 L 9055-4M 21/302 J 8518-4M 21/3205 7735-4M H01L 21/88 F
Claims (3)
ッチング物上のネガ型フォトレジスト層を露光する第１
回目の露光工程と、 上記マスクの遮光膜と交差する線状遮光膜を有する別の
マスクを介して上記ネガ型フォトレジスト層を露光する
第２回目の露光工程と、 上記ネガ型フォトレジスト層を現像する工程と、 現像された上記ネガ型フォトレジスト層をマスクとして
上記被エッチング物をエッチングする工程と、 を有することを特徴とする微細パターン形成方法1. A first photoresist for exposing a negative photoresist layer on an object to be etched through a mask having a linear light-shielding film.
A second exposure step of exposing the negative photoresist layer through another mask having a linear light-shielding film that intersects the light-shielding film of the mask; and a step of exposing the negative photoresist layer. A fine pattern forming method comprising: a developing step; and a step of etching the object to be etched using the developed negative photoresist layer as a mask.
系レジストを用いることを特徴とする請求項１記載の微
細パターン形成方法2. The method for forming a fine pattern according to claim 1, wherein a chemically amplified resist is used as the negative photoresist layer.
工程において露光光線としてエキシマレーザ光線を用い
ることを特徴とする請求項１又は２記載の微細パターン
形成方法3. The fine pattern forming method according to claim 1, wherein an excimer laser beam is used as an exposure light beam in the first exposure process and the second exposure process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4151530A JPH05326358A (en) | 1992-05-18 | 1992-05-18 | Method for forming fine pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4151530A JPH05326358A (en) | 1992-05-18 | 1992-05-18 | Method for forming fine pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05326358A true JPH05326358A (en) | 1993-12-10 |
Family
ID=15520531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4151530A Pending JPH05326358A (en) | 1992-05-18 | 1992-05-18 | Method for forming fine pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05326358A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009125529A1 (en) * | 2008-04-11 | 2009-10-15 | パナソニック株式会社 | Method of generating mask pattern and method of forming pattern |
| JP2010501881A (en) * | 2006-08-18 | 2010-01-21 | ブルーワー サイエンス アイ エヌ シー． | Antireflective imaging layer for multiple patterning processes |
| JP2010040849A (en) * | 2008-08-06 | 2010-02-18 | Tokyo Ohka Kogyo Co Ltd | Resist pattern-forming method |
| JP2011119331A (en) * | 2009-12-01 | 2011-06-16 | Renesas Electronics Corp | Method of manufacturing semiconductor integrated circuit device |
| JP2012215672A (en) * | 2011-03-31 | 2012-11-08 | Dainippon Printing Co Ltd | Mask pattern drawing method |
| JP2013232006A (en) * | 2013-07-22 | 2013-11-14 | Tokyo Ohka Kogyo Co Ltd | Method for forming resist pattern |
| JP2014049738A (en) * | 2012-08-29 | 2014-03-17 | Toshiba Corp | Pattern forming method |
| CN104977803A (en) * | 2015-07-22 | 2015-10-14 | 上海华力微电子有限公司 | Method for forming one-dimensional and two-dimensional photoresist graphs simultaneously |
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-
1992
- 1992-05-18 JP JP4151530A patent/JPH05326358A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010501881A (en) * | 2006-08-18 | 2010-01-21 | ブルーワー サイエンス アイ エヌ シー． | Antireflective imaging layer for multiple patterning processes |
| WO2009125529A1 (en) * | 2008-04-11 | 2009-10-15 | パナソニック株式会社 | Method of generating mask pattern and method of forming pattern |
| JP2010040849A (en) * | 2008-08-06 | 2010-02-18 | Tokyo Ohka Kogyo Co Ltd | Resist pattern-forming method |
| US9640396B2 (en) | 2009-01-07 | 2017-05-02 | Brewer Science Inc. | Spin-on spacer materials for double- and triple-patterning lithography |
| JP2011119331A (en) * | 2009-12-01 | 2011-06-16 | Renesas Electronics Corp | Method of manufacturing semiconductor integrated circuit device |
| CN102136447A (en) * | 2009-12-01 | 2011-07-27 | 瑞萨电子株式会社 | Method of manufacturing semiconductor integrated circuit device |
| US8133795B2 (en) | 2009-12-01 | 2012-03-13 | Renesas Electronics Corporation | Method of manufacturing semiconductor integrated circuit device |
| US8569144B2 (en) | 2009-12-01 | 2013-10-29 | Renesas Electronics Corporation | Method of manufacturing semiconductor integrated circuit device |
| JP2012215672A (en) * | 2011-03-31 | 2012-11-08 | Dainippon Printing Co Ltd | Mask pattern drawing method |
| JP2014049738A (en) * | 2012-08-29 | 2014-03-17 | Toshiba Corp | Pattern forming method |
| JP2013232006A (en) * | 2013-07-22 | 2013-11-14 | Tokyo Ohka Kogyo Co Ltd | Method for forming resist pattern |
| CN104977803A (en) * | 2015-07-22 | 2015-10-14 | 上海华力微电子有限公司 | Method for forming one-dimensional and two-dimensional photoresist graphs simultaneously |
| CN104977803B (en) * | 2015-07-22 | 2019-06-28 | 上海华力微电子有限公司 | A method of being formed simultaneously a peacekeeping two dimension photoetching offset plate figure |
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