KR970072014A - Method for forming an alignment key pattern of a semiconductor device - Google Patents

Method for forming an alignment key pattern of a semiconductor device Download PDF

Info

Publication number
KR970072014A
KR970072014A KR1019960012544A KR19960012544A KR970072014A KR 970072014 A KR970072014 A KR 970072014A KR 1019960012544 A KR1019960012544 A KR 1019960012544A KR 19960012544 A KR19960012544 A KR 19960012544A KR 970072014 A KR970072014 A KR 970072014A
Authority
KR
South Korea
Prior art keywords
exposure
exposure apparatus
forming
alignment key
semiconductor device
Prior art date
Application number
KR1019960012544A
Other languages
Korean (ko)
Inventor
권오철
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960012544A priority Critical patent/KR970072014A/en
Publication of KR970072014A publication Critical patent/KR970072014A/en

Links

Abstract

반도체 장치의 스테퍼 및 스캔너용 얼라인 키 패턴 형성방법이 개시되어 있다. 본 발명은 반도체 기판 상에 포토레지스트막을 형성하는 단계와, 제1노광장치로 상기 포토레지스트막을 1차 노광하는 단계와, 상기 1차 노광된 포토레제스트막이 형성된 반도체 기판을 제2노광장치로 상기 제1차 노광시 형성된 얼라인 키 신호를 이용하여 2차 노광하는 단계와, 상기 1차 및 2차 노광된 포토레지스트막을 현상 및 식각하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 장치의 제1 및 제2노광장치용 얼라인 키 패턴 형성방법을 제공한다. 상기 제1노광장치 및 제2노광장치는 스테퍼 노광장치 또는 스캔너 노광장치이다. 따라서, 본 발명은 한 번의 사진공정으로 제1 및 제2노광장치용 얼라인 키 패턴 형성방법을 제조할 수 있다.A stepper of a semiconductor device and a method of forming a scanline alignment key pattern are disclosed. The present invention provides a method of manufacturing a semiconductor device, comprising: forming a photoresist film on a semiconductor substrate; subjecting the photoresist film to primary exposure with a first exposure apparatus; A step of performing secondary exposure using an alignment key signal formed at the time of the first exposure and developing and etching the photoresist film of the primary and secondary exposures, There is provided a method of forming an alignment key pattern for a second exposure apparatus. The first exposure apparatus and the second exposure apparatus are a stepper exposure apparatus or a scanning exposure apparatus. Therefore, the present invention can manufacture the alignment key pattern forming method for the first and second exposure apparatuses in a single photolithography process.

Description

반도체 장치의 얼라인 키 패턴 형성방법Method for forming an alignment key pattern of a semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도 내지 제3도는 본 발명에 의한 반도체 장치의 얼라인 키 패턴 형성방법을 설명하기 위하여 도시한 단면도들이다.FIGS. 2 to 3 are cross-sectional views illustrating a method of forming an alignment key pattern of a semiconductor device according to the present invention.

Claims (2)

반도체 기판 상에 포토레지스트막을 형성하는 단계; 제1노광장치로 상기 포토레지스트막을 1차 노광하는 단계; 상기 1차 노광된 포토레제스트막이 형성된 반도체 기판을 제2노광장치로 상기 제1차 노광시 형성된 얼라인 키 신호를 이용하여 2차 노광하는 단계; 및 상기 1차 및 2차 노광된 포토레지스트막을 현상 및 식각하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 장치의 제1 및 제2노광장치용 얼라인 키 패턴 형성방법Forming a photoresist film on a semiconductor substrate; Exposing the photoresist film to a first exposure with a first exposure apparatus; Exposing the semiconductor substrate on which the first exposure photoresist film is formed to a second exposure apparatus using a second alignment exposure using an alignment key signal formed during the first exposure; And developing and etching the first and second exposed photoresist films. The method for forming the alignment key pattern for the first and second exposure apparatuses of a semiconductor device according to claim 1, 제1항에 있어서, 상기 제1노광장치 및 제2노광장치는 스테퍼 노광장치 또는 스캔너 노광장치인 것을 특징으로 하는 반도체 장치의 제1 및 제2노광장치용 얼라인 키 패턴 형성방법.2. The method according to claim 1, wherein the first exposure apparatus and the second exposure apparatus are a stepper exposure apparatus or a scanning exposure apparatus. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960012544A 1996-04-24 1996-04-24 Method for forming an alignment key pattern of a semiconductor device KR970072014A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960012544A KR970072014A (en) 1996-04-24 1996-04-24 Method for forming an alignment key pattern of a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960012544A KR970072014A (en) 1996-04-24 1996-04-24 Method for forming an alignment key pattern of a semiconductor device

Publications (1)

Publication Number Publication Date
KR970072014A true KR970072014A (en) 1997-11-07

Family

ID=66217289

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960012544A KR970072014A (en) 1996-04-24 1996-04-24 Method for forming an alignment key pattern of a semiconductor device

Country Status (1)

Country Link
KR (1) KR970072014A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990054914A (en) * 1997-12-26 1999-07-15 김영환 Ultrafine Sorting Method Using Radioactive Isotopes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990054914A (en) * 1997-12-26 1999-07-15 김영환 Ultrafine Sorting Method Using Radioactive Isotopes

Similar Documents

Publication Publication Date Title
KR960005864A (en) Fine pattern formation method
KR970018110A (en) Pattern Forming Method of Semiconductor Device
KR950024260A (en) Phase inversion mask formation method
KR970072014A (en) Method for forming an alignment key pattern of a semiconductor device
KR960001894A (en) Method of forming resist pattern and acidic water-soluble material composition used in the method
KR100329716B1 (en) High resolution lithography method
KR970071126A (en) Pattern formation method using dual photoresist
KR950025854A (en) Manufacturing method of fine pattern of semiconductor device
KR950015577A (en) Manufacturing method of semiconductor device
KR950014983A (en) Photo etching method
KR960002592A (en) Manufacturing method of semiconductor device
KR950021040A (en) Manufacturing Method of Semiconductor Device
KR980010603A (en) Photomask manufacturing method
KR950025485A (en) Method of manufacturing photoresist pattern of semiconductor device
KR970007485A (en) Manufacturing method of phase inversion mask provided with halftone film
KR970076077A (en) Manufacturing Method of Semiconductor Device Using Dummy Pattern
KR960012332A (en) Method of forming fine pattern of semiconductor device
KR980003860A (en) Photoresist pattern formation method
KR950014974A (en) Manufacturing Method of Semiconductor Device
KR970077296A (en) Etching method of aluminum thin film
KR970051896A (en) Manufacturing Method of Semiconductor Device
KR950001893A (en) Ultra-fine contact hole formation method
KR950030230A (en) How to make half-tone mask using chrome mask
KR970003415A (en) Method of Forming Photosensitive Film Pattern on Semiconductor Substrate
KR950001918A (en) Gate pattern forming method using nitride film

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination