MY100941A - A process of forming a negative patern in a photoresist layer. - Google Patents

A process of forming a negative patern in a photoresist layer.

Info

Publication number
MY100941A
MY100941A MYPI87000750A MYPI19870750A MY100941A MY 100941 A MY100941 A MY 100941A MY PI87000750 A MYPI87000750 A MY PI87000750A MY PI19870750 A MYPI19870750 A MY PI19870750A MY 100941 A MY100941 A MY 100941A
Authority
MY
Malaysia
Prior art keywords
layer
irradiated portions
photoresist layer
portions
patern
Prior art date
Application number
MYPI87000750A
Inventor
August Vrancken
Bruno Roland
Original Assignee
Ucb Electronics S A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ucb Electronics S A filed Critical Ucb Electronics S A
Publication of MY100941A publication Critical patent/MY100941A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Abstract

THE INVENTION RELATES TO A PROCESS OF FORMING HIGH RESOLUTION NEGATIVE PATTERNS IN A PHOTORESIST LAYER.THE PROCESS COMPRISES THE STEPS OF (A) COATING A SUBSTRATE WITH A LAYER OF A PHOTOSENSITIVE RESIN COMPRISING A POLYMER, PREFERABLY A PHENOLIC POLYMER, MIXED OR BOUND TO A PHOTOACTIVE COMPOUND SUCH AS A DIAZOQUINONE, (B) EXPOSING THE LAYER TO ULTRAVIOLET OR VISIBLE LIGHT THROUGH A MASK, (C) TREATING THE LAYER WITH A SILICON COMPOUND (E.G. HEXAMETHYLDISILAZANE) AND (D) DRY DEVELOPING BY PLASMA ETCHING (E.G. AN OXYGEN PLASMA) TO REMOVE THE NON-IRRADIATED PORTIONS OF THE LAYER. THE SILICON COMPOUND IS ABLE TO DIFFUSE SELECTIVELY IN THE IRRADIATED PORTIONS OF THE LAYER AND FIX IN THESE PORTIONS; BY DRY ETCHING A SILICON OXIDE ETCH MASK IS FORMED WHICH PROTECTS THESE IRRADIATED PORTIONS EFFICIENTLY THROUGHOUT THIS PROCESS.THE PROCESS IS USEFUL IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES, INCLUDING INTEGRATED CIRCUITS. (FIG. 2)
MYPI87000750A 1984-10-26 1987-06-01 A process of forming a negative patern in a photoresist layer. MY100941A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB848427149A GB8427149D0 (en) 1984-10-26 1984-10-26 Resist materials
EP85870142A EP0184567B1 (en) 1984-10-26 1985-10-24 Process for the formation of negative patterns in a photoresist layer

Publications (1)

Publication Number Publication Date
MY100941A true MY100941A (en) 1991-05-31

Family

ID=10568805

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI87000750A MY100941A (en) 1984-10-26 1987-06-01 A process of forming a negative patern in a photoresist layer.

Country Status (11)

Country Link
EP (1) EP0184567B1 (en)
JP (2) JPS61107346A (en)
KR (1) KR940004423B1 (en)
AT (1) ATE48708T1 (en)
CA (1) CA1275846C (en)
DE (1) DE3574788D1 (en)
GB (1) GB8427149D0 (en)
IE (1) IE56708B1 (en)
IL (1) IL76702A (en)
MY (1) MY100941A (en)
SU (1) SU1498400A3 (en)

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CA1267378A (en) * 1984-12-07 1990-04-03 Jer-Ming Yang Top imaged and organosilicon treated polymer layer developable with plasma
US4810601A (en) * 1984-12-07 1989-03-07 International Business Machines Corporation Top imaged resists
US4908298A (en) * 1985-03-19 1990-03-13 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4782008A (en) * 1985-03-19 1988-11-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
CA1282273C (en) * 1985-03-19 1991-04-02 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
JPS61268028A (en) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Development of mask image in photoresist
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
DE3772267D1 (en) * 1986-06-12 1991-09-26 Matsushita Electric Ind Co Ltd IMAGE GENERATION PROCESS.
DE3751127T2 (en) * 1986-06-23 1995-09-14 Ibm Production of permeable polymeric films or layers by leaching.
JPS63165845A (en) * 1986-12-26 1988-07-09 Toshiba Corp Pattern forming method
CA1286424C (en) * 1987-01-12 1991-07-16 William C. Mccolgin Bilayer lithographic process
NL8700421A (en) * 1987-02-20 1988-09-16 Philips Nv METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
US4808511A (en) * 1987-05-19 1989-02-28 International Business Machines Corporation Vapor phase photoresist silylation process
JPS6479743A (en) * 1987-09-22 1989-03-24 Nippon Telegraph & Telephone Pattern forming method by dry developing
JP2506133B2 (en) * 1987-11-18 1996-06-12 日本電信電話株式会社 Pattern formation method
US5272026A (en) * 1987-12-18 1993-12-21 Ucb S.A. Negative image process utilizing photosensitive compositions containing aromatic fused polycyclic sulfonic acid and partial ester or phenolic resin with diazoquinone sulfonic acid or diazoquinone carboxylic acid, and associated imaged article
GB8729510D0 (en) * 1987-12-18 1988-02-03 Ucb Sa Photosensitive compositions containing phenolic resins & diazoquinone compounds
JPH01186934A (en) * 1988-01-21 1989-07-26 Toshiba Corp Pattern forming method
JPH01302726A (en) * 1988-02-10 1989-12-06 Japan Synthetic Rubber Co Ltd Reactive ion etching equipment
JP2623309B2 (en) * 1988-02-22 1997-06-25 ユーシービー ソシエテ アノニム How to get a resist pattern
JP2521329B2 (en) * 1988-07-04 1996-08-07 シャープ株式会社 Method for manufacturing semiconductor device
JPH0269746A (en) * 1988-08-01 1990-03-08 Internatl Business Mach Corp <Ibm> Method of forming photo-resist, polymer structure and photo-resist
US5094936A (en) * 1988-09-16 1992-03-10 Texas Instruments Incorporated High pressure photoresist silylation process and apparatus
JPH02158737A (en) * 1988-10-31 1990-06-19 Internatl Business Mach Corp <Ibm> Generation of relief pattern and use
JPH02161432A (en) * 1988-12-14 1990-06-21 Nec Corp Formation of fine pattern
JP2848625B2 (en) * 1989-03-31 1999-01-20 株式会社東芝 Pattern formation method
JP2930971B2 (en) * 1989-06-22 1999-08-09 株式会社東芝 Pattern formation method
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
JPH043456A (en) * 1990-04-19 1992-01-08 Nec Corp Formation of active layer laminated element
US5061604A (en) * 1990-05-04 1991-10-29 Minnesota Mining And Manufacturing Company Negative crystalline photoresists for UV photoimaging
DE69208769T2 (en) * 1991-07-31 1996-07-18 Texas Instruments Inc High resolution lithographic process
US5409434A (en) * 1992-01-30 1995-04-25 Toyota Jidosha Kabushiki Kaisha Control system with failsafe for shift-by-wire automatic transmission
KR100396559B1 (en) * 2001-11-05 2003-09-02 삼성전자주식회사 Method for manufacturing monolithic inkjet printhead
JP5324361B2 (en) * 2009-08-28 2013-10-23 東京応化工業株式会社 Surface treatment agent and surface treatment method
US9868902B2 (en) 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US4232110A (en) * 1979-03-12 1980-11-04 Bell Telephone Laboratories, Incorporated Solid state devices formed by differential plasma etching of resists
US4307178A (en) * 1980-04-30 1981-12-22 International Business Machines Corporation Plasma develoment of resists
JPS5723937A (en) * 1980-07-17 1982-02-08 Matsushita Electric Ind Co Ltd Photographic etching method
US4396704A (en) * 1981-04-22 1983-08-02 Bell Telephone Laboratories, Incorporated Solid state devices produced by organometallic plasma developed resists
JPS57202533A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Formation of pattern
JPS57202535A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Formation of negative resist pattern
DE3377597D1 (en) * 1982-04-12 1988-09-08 Nippon Telegraph & Telephone Method for forming micropattern
JPS5961928A (en) * 1982-10-01 1984-04-09 Hitachi Ltd Pattern formation
CA1248402A (en) * 1983-09-16 1989-01-10 Larry E. Stillwagon Method of making articles using gas functionalized plasma developed layer
JPS60501777A (en) * 1983-11-02 1985-10-17 ヒユ−ズ・エアクラフト・カンパニ− Silicon dioxide based graft polymerization lithography mask
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist

Also Published As

Publication number Publication date
IL76702A (en) 1989-07-31
EP0184567A1 (en) 1986-06-11
JPS61107346A (en) 1986-05-26
CA1275846C (en) 1990-11-06
JPH0220869A (en) 1990-01-24
DE3574788D1 (en) 1990-01-18
IE56708B1 (en) 1991-11-06
JPH065385B2 (en) 1994-01-19
KR860003674A (en) 1986-05-28
GB8427149D0 (en) 1984-12-05
ATE48708T1 (en) 1989-12-15
EP0184567B1 (en) 1989-12-13
IL76702A0 (en) 1986-02-28
SU1498400A3 (en) 1989-07-30
JPH0456979B2 (en) 1992-09-10
IE852643L (en) 1986-04-26
KR940004423B1 (en) 1994-05-25

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