JPS56111221A - Formation on mask for etching - Google Patents
Formation on mask for etchingInfo
- Publication number
- JPS56111221A JPS56111221A JP806580A JP806580A JPS56111221A JP S56111221 A JPS56111221 A JP S56111221A JP 806580 A JP806580 A JP 806580A JP 806580 A JP806580 A JP 806580A JP S56111221 A JPS56111221 A JP S56111221A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- mask
- resist
- improved
- ultraviolet ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To improve homogeneity and speed of etching, by annealing by means of ultraviolet ray irradiation in the phototype process. CONSTITUTION:A photoresist is coated on a semiconductor wafer, and a mask is applied according to the conventional method. After applications of exposure, developing and rinsing, vacuum baking is performed with ultraviolet ray irradiation. With such an arrangement, because the surface of the resist is activated and the etching speed is improved, and because the reactive particles in the resist can be perfectly cross-linked, the masking properties are improved. Thus a fine patterning can be performed with high precision.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP806580A JPS56111221A (en) | 1980-01-25 | 1980-01-25 | Formation on mask for etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP806580A JPS56111221A (en) | 1980-01-25 | 1980-01-25 | Formation on mask for etching |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56111221A true JPS56111221A (en) | 1981-09-02 |
Family
ID=11682937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP806580A Pending JPS56111221A (en) | 1980-01-25 | 1980-01-25 | Formation on mask for etching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56111221A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61102035A (en) * | 1984-10-24 | 1986-05-20 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS62162330A (en) * | 1986-01-13 | 1987-07-18 | Ushio Inc | Resist processing |
JPS62241332A (en) * | 1986-04-11 | 1987-10-22 | Rohm Co Ltd | Manufacture of semiconductor device |
JPH02209724A (en) * | 1983-05-23 | 1990-08-21 | Fusion Semiconductor Syst | Method of hardening photoresist |
WO1991016724A1 (en) * | 1990-04-23 | 1991-10-31 | Tadahiro Ohmi | Resist processing device, resist processing method and resist pattern |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51111072A (en) * | 1975-03-26 | 1976-10-01 | Hitachi Ltd | Photo etching method |
JPS5223401A (en) * | 1975-08-15 | 1977-02-22 | Hitachi Ltd | Method of etching photography |
JPS53976A (en) * | 1976-06-25 | 1978-01-07 | Toshiba Corp | Dry developing method |
JPS54163680A (en) * | 1978-06-15 | 1979-12-26 | Fujitsu Ltd | Pattern forming method |
-
1980
- 1980-01-25 JP JP806580A patent/JPS56111221A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51111072A (en) * | 1975-03-26 | 1976-10-01 | Hitachi Ltd | Photo etching method |
JPS5223401A (en) * | 1975-08-15 | 1977-02-22 | Hitachi Ltd | Method of etching photography |
JPS53976A (en) * | 1976-06-25 | 1978-01-07 | Toshiba Corp | Dry developing method |
JPS54163680A (en) * | 1978-06-15 | 1979-12-26 | Fujitsu Ltd | Pattern forming method |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02209724A (en) * | 1983-05-23 | 1990-08-21 | Fusion Semiconductor Syst | Method of hardening photoresist |
JPH0527107B2 (en) * | 1983-05-23 | 1993-04-20 | Fuyuujon Semikondakutaa Shisutemuzu | |
JPS61102035A (en) * | 1984-10-24 | 1986-05-20 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS62162330A (en) * | 1986-01-13 | 1987-07-18 | Ushio Inc | Resist processing |
JPS62241332A (en) * | 1986-04-11 | 1987-10-22 | Rohm Co Ltd | Manufacture of semiconductor device |
WO1991016724A1 (en) * | 1990-04-23 | 1991-10-31 | Tadahiro Ohmi | Resist processing device, resist processing method and resist pattern |
US5516626A (en) * | 1990-04-23 | 1996-05-14 | Tadahiro Ohmi | Resist processing method |
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