JPS56111221A - Formation on mask for etching - Google Patents

Formation on mask for etching

Info

Publication number
JPS56111221A
JPS56111221A JP806580A JP806580A JPS56111221A JP S56111221 A JPS56111221 A JP S56111221A JP 806580 A JP806580 A JP 806580A JP 806580 A JP806580 A JP 806580A JP S56111221 A JPS56111221 A JP S56111221A
Authority
JP
Japan
Prior art keywords
etching
mask
resist
improved
ultraviolet ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP806580A
Other languages
Japanese (ja)
Inventor
Masahiro Yoneda
Hiroji Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP806580A priority Critical patent/JPS56111221A/en
Publication of JPS56111221A publication Critical patent/JPS56111221A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To improve homogeneity and speed of etching, by annealing by means of ultraviolet ray irradiation in the phototype process. CONSTITUTION:A photoresist is coated on a semiconductor wafer, and a mask is applied according to the conventional method. After applications of exposure, developing and rinsing, vacuum baking is performed with ultraviolet ray irradiation. With such an arrangement, because the surface of the resist is activated and the etching speed is improved, and because the reactive particles in the resist can be perfectly cross-linked, the masking properties are improved. Thus a fine patterning can be performed with high precision.
JP806580A 1980-01-25 1980-01-25 Formation on mask for etching Pending JPS56111221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP806580A JPS56111221A (en) 1980-01-25 1980-01-25 Formation on mask for etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP806580A JPS56111221A (en) 1980-01-25 1980-01-25 Formation on mask for etching

Publications (1)

Publication Number Publication Date
JPS56111221A true JPS56111221A (en) 1981-09-02

Family

ID=11682937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP806580A Pending JPS56111221A (en) 1980-01-25 1980-01-25 Formation on mask for etching

Country Status (1)

Country Link
JP (1) JPS56111221A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102035A (en) * 1984-10-24 1986-05-20 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS62162330A (en) * 1986-01-13 1987-07-18 Ushio Inc Resist processing
JPS62241332A (en) * 1986-04-11 1987-10-22 Rohm Co Ltd Manufacture of semiconductor device
JPH02209724A (en) * 1983-05-23 1990-08-21 Fusion Semiconductor Syst Method of hardening photoresist
WO1991016724A1 (en) * 1990-04-23 1991-10-31 Tadahiro Ohmi Resist processing device, resist processing method and resist pattern

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111072A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Photo etching method
JPS5223401A (en) * 1975-08-15 1977-02-22 Hitachi Ltd Method of etching photography
JPS53976A (en) * 1976-06-25 1978-01-07 Toshiba Corp Dry developing method
JPS54163680A (en) * 1978-06-15 1979-12-26 Fujitsu Ltd Pattern forming method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111072A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Photo etching method
JPS5223401A (en) * 1975-08-15 1977-02-22 Hitachi Ltd Method of etching photography
JPS53976A (en) * 1976-06-25 1978-01-07 Toshiba Corp Dry developing method
JPS54163680A (en) * 1978-06-15 1979-12-26 Fujitsu Ltd Pattern forming method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02209724A (en) * 1983-05-23 1990-08-21 Fusion Semiconductor Syst Method of hardening photoresist
JPH0527107B2 (en) * 1983-05-23 1993-04-20 Fuyuujon Semikondakutaa Shisutemuzu
JPS61102035A (en) * 1984-10-24 1986-05-20 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS62162330A (en) * 1986-01-13 1987-07-18 Ushio Inc Resist processing
JPS62241332A (en) * 1986-04-11 1987-10-22 Rohm Co Ltd Manufacture of semiconductor device
WO1991016724A1 (en) * 1990-04-23 1991-10-31 Tadahiro Ohmi Resist processing device, resist processing method and resist pattern
US5516626A (en) * 1990-04-23 1996-05-14 Tadahiro Ohmi Resist processing method

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