JPS6399526A - Method for compensating proximity effect of electron beam - Google Patents
Method for compensating proximity effect of electron beamInfo
- Publication number
- JPS6399526A JPS6399526A JP62254528A JP25452887A JPS6399526A JP S6399526 A JPS6399526 A JP S6399526A JP 62254528 A JP62254528 A JP 62254528A JP 25452887 A JP25452887 A JP 25452887A JP S6399526 A JPS6399526 A JP S6399526A
- Authority
- JP
- Japan
- Prior art keywords
- irradiated
- reactive layer
- reactive
- irradiation
- burning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- 230000000694 effects Effects 0.000 title claims abstract description 21
- 238000010894 electron beam technology Methods 0.000 title claims description 9
- 230000001678 irradiating effect Effects 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 abstract description 17
- 239000000463 material Substances 0.000 abstract description 14
- 238000000609 electron-beam lithography Methods 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract description 2
- 238000001035 drying Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002285 radioactive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241001663154 Electron Species 0.000 description 1
- 244000228957 Ferula foetida Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は一般的には集積回路製造方法に関し、特に電子
ビームの近接効果を補償する方法に関する。TECHNICAL FIELD OF THE INVENTION The present invention relates generally to integrated circuit manufacturing methods, and more particularly to methods for compensating for electron beam proximity effects.
数百または数千の個々の素子を含む集積回路は、通常シ
リコン・ウェー７アのような半導体基板上に形成される
。集積回路を製造するためには、パターン形成された半
導体、絶縁体、導体の材料の層が所望回路が完成するま
で基板表面上に連続的に与えられる。Integrated circuits containing hundreds or thousands of individual devices are typically formed on semiconductor substrates, such as silicon wafers. To manufacture integrated circuits, successive layers of patterned semiconductor, insulator, and conductor materials are applied onto a substrate surface until the desired circuit is completed.
集積回路の１つの層をパターン形成する典型的な方法は
、基板の上面に反応性材料を付加し、その反応性材料を
放射性エネルギ源に露出し、その反応性材料を現像して
基板表面上に”マスク”を形成するものである。その層
はマスクを介してパターン形成され、その後マスクは除
去される。マスクを形成するプロセスはしばしばリソグ
ラフィと呼ばれる。A typical method of patterning one layer of an integrated circuit is to add a reactive material to the top surface of the substrate, expose the reactive material to a source of radioactive energy, and develop the reactive material to form a layer on the substrate surface. It forms a “mask” on the surface. The layer is patterned through a mask, and then the mask is removed. The process of forming masks is often called lithography.
たいてい、反応性材料が露出される放射性エネルギは可
視または紫外線領域の電磁放射であシ、反応性材料はフ
ォトレジストであシ、そのプロセスはフォトリングラフ
ィと呼ばれる。しかし、収積回路の寸法が減少するにつ
れて、可視光または紫外線光の比較的長い波長がマスク
の解像度の限定要素となる。結局のところ、短かい波長
の放射エネルギを用いて反応性層を露出することに大き
な関心が存在する。リソグラフィにおいて期待が持たれ
る放射エネルギには電子ビーム（Ｅビーム）が含まれる
。Often, the radioactive energy to which the reactive material is exposed is electromagnetic radiation in the visible or ultraviolet range, the reactive material is a photoresist, and the process is called photolithography. However, as the dimensions of integrated circuits decrease, the relatively long wavelengths of visible or ultraviolet light become a limiting factor in mask resolution. Ultimately, there is great interest in exposing reactive layers using short wavelength radiant energy. Radiant energy that holds promise in lithography includes electron beams (E-beams).
Ｅビーム・リングラフィ法は秀れた解像度を与えること
ができるけれども、この方法にも問題や欠点がある。Ｅ
ビーム・リソグラフィに関連した大きな問題は”近接効
果”と呼ばれるものであム簡単にいうと、Ｅビーム近接
効果は、Ｅビームが反応性層、下方層および基板にぶつ
かるときの電子の後方散乱によって生じる。後方散乱の
ために反応性層の各部の有効露出が増大し、構造の寸法
がバラつく。Ｅビーム近接効果は、大きく分離された形
状では特に厄介ということはないが、格子パターンのよ
うな密集構造の寸法は太きくずれることがある。Although E-beam phosphorography can provide excellent resolution, this method also has problems and drawbacks. E
A major problem associated with beam lithography is called the "proximity effect." Simply put, the E-beam proximity effect is caused by the backscatter of electrons when the E-beam hits reactive layers, underlying layers, and the substrate. arise. Backscattering increases the effective exposure of each part of the reactive layer and causes variations in the dimensions of the structure. Although E-beam proximity effects are not particularly troublesome for widely separated features, the dimensions of dense structures such as grating patterns can be severely distorted.
Ｅビーム近接効果に対しては多くの補償方法が提案され
ている。その１つは、Ｏｗｅｎ他によシ” Ｐｒｏｘｉ
ｍｉｔｙ Ｅｆｆｅｃｔ Ｃｏｒｒｅｃｔｉｏｎ ｆｏ
ｒ ＥｌｅｃｔｒｏｎＢｅａｍ Ｌｉｔｈｏｇｒａｐｈ
ｙ ｂｙ ＥＱｕａｌｉｚａｔｉｏｒ＋ ｏｆＢａｃｋ
ｇｒｏｕｎｄ Ｄｏｓｅ”、 Ｊｏｕｒｎａｌ ｏｆ
Ａｐｐｌ １ｅｄＰｈｙｓｉｃｓ、 Ｖｏｌ、５４．Ｎ
ｏ、６ Ｊｕｎｅ、１９８３において提案される。［ゴ
ース） （ｇｈｏｓｔ）Ｊと命名されているＯｗｅｎ他
の補償法は、まず従来の方法で像領域を照射し、次に、
低い線量（ｄｏｓｅ）のピントの外れたビームでフィー
ルド領域を照射し後方散乱の電子エネルギを補償するも
のである。その結果、像領域は皆同じレベルのエネルギ
を受け、またフィールド内の背景エネルギ（ｂａｃｋｇ
ｒｏｕｎｄ ｅｎｅｒｇｙ）は等しくされる。しかし、
ゴースト法は付加的なフィールド照射が必要で、イメー
ジ・コントラストが低くなる。Many compensation methods have been proposed for the E-beam proximity effect. One of them is Owen et al.
Mity Effect Correction for
r ElectronBeam Lithograph
y by EQUALIZATION+ ofBack
Ground Dose”, Journal of
Appl 1ed Physics, Vol, 54. N
o, 6 June, 1983. Owen et al.'s compensation method, named ghost J, first illuminates the image area in a conventional manner and then
It illuminates the field area with a low dose, out-of-focus beam to compensate for backscattered electron energy. As a result, the image areas all receive the same level of energy and the background energy within the field.
round energy) are made equal. but,
Ghost methods require additional field illumination and result in lower image contrast.
近接効果は、各細分された形状毎に照射線量を調整した
シ、設計パターンの寸法を調整したシすル等、いくつか
の他の方法によっても補償できる。Proximity effects can also be compensated for by several other methods, such as adjusting the exposure dose for each subdivision, or adjusting the dimensions of the design pattern.
Ｊｏｕｒｎａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉ
ｃｓ、Ｖｏｌ、５０＋Ｎｏ、６Ｐ、４３７１（１９７９
）においてＰａｒｋａｈは前者の方法を教示し、Ｅｌｅ
ｃｔｒｏｎ ａｎｄ Ｉｏｎ Ｂｅａｍ ５ｃｉｅｎｃ
ｅａｎｄ Ｔｅｃｈｎｏｌｏｇｙ、 Ｂｌｅｃｔｒｏｃ
ｈｅｍｉｃａｌ ５ｏｃｉｅｔｙ（１９７８）は後者の
方法を教示している。残念ながら、両方法とも、局所照
射線量、および隣接している構造、空間の寸法、形状、
配置のような要因について、コンピュータや人手による
大量の計算が必要である。Journal of Applied Physi
cs, Vol, 50+No, 6P, 4371 (1979
Parkah taught the former method in ), and Ele
ctron and Ion Beam 5cienc
eand Technology, Blectroc
Chemical Society (1978) teaches the latter method. Unfortunately, both methods limit the local radiation dose and the size, shape, and shape of adjacent structures and spaces.
Factors such as placement require a large amount of calculation by computer or by hand.
本発明の目的はＥビーム近接効果を補償する簡単で、経
済的な方法を提供することである。It is an object of the present invention to provide a simple and economical method of compensating for E-beam proximity effects.
本発明の一実施例によれば、基板に反応性材料を付加し
、反応性材料を乾燥して反応性層を形成し、反応性層の
各部をＩｎ’−ムで照射し、反応性層を焼いて（ｂａｋ
ｅ）反応性層の非照射部分（ｕｎｅｘｐｏｓｅｄ ｐｏ
ｒｔｉｏｎ ）から照射部分（ｅｘｐｏｓｅｄｐｏｒｔ
ｉｏｎ）への分子移動を生じさせ、反応性層を現像する
。照射後に焼くことによって生じた分子移動はＥビーム
近接効果を補償する傾向を持つ。According to one embodiment of the present invention, a reactive material is added to a substrate, the reactive material is dried to form a reactive layer, and portions of the reactive layer are irradiated with In'-me. Baked (bak)
e) unexposed parts of the reactive layer
(rtion) to the exposed portion (exposedport
ion) and develop the reactive layer. Molecular movement caused by post-irradiation baking tends to compensate for E-beam proximity effects.
本発明の方法の利点はその簡単さにある。厄介なＥビー
ム近接効果は反応性材料を適当に選択し、照射後に焼く
ことによって補償できる。The advantage of the method of the invention is its simplicity. Troublesome E-beam proximity effects can be compensated for by appropriate selection of reactive materials and baking after irradiation.
本発明の方法の別の利点は、解像度の損失なしに完全に
補償できることである。Another advantage of the method of the invention is that it can be fully compensated without loss of resolution.
本発明のこれらの、および他の目的、利点は、次の説明
を読み、各図面を検討することによって当業者に明らか
になるだろう。These and other objects and advantages of the present invention will become apparent to those skilled in the art from reading the following description and studying the drawings.
第２図において、反応性層１０が半導体基板１４の上表
面１２上に形成される。通常は、反応性層１０は、基板
１４を高速度で回転させながら上表面１２に液体の反応
性材料（たとえばフォトレジスト）を注ぎ、次に、オー
プン内で半導体基板１４を焼くような適当な方法を用い
て反応性材料を処置（ｃｕｒｅ）することによって形成
される。フォトレジストを半導体基板１４に塗付する方
法は当業者に周知である。反応性層１０は、半導体基板
１４上に形成される他の層の上にも形成できることに注
意すべきである。In FIG. 2, a reactive layer 10 is formed on top surface 12 of semiconductor substrate 14. In FIG. Typically, reactive layer 10 is formed by a suitable method such as pouring a liquid reactive material (e.g., photoresist) onto top surface 12 while rotating substrate 14 at high speed and then baking semiconductor substrate 14 in an open space. It is formed by curing a reactive material using a method. Methods of applying photoresist to semiconductor substrate 14 are well known to those skilled in the art. It should be noted that reactive layer 10 can also be formed over other layers formed on semiconductor substrate 14.
線１６ａ、 １６ｂ、 １６ｃ、 １６ｄおよび１６ｅ
は、Ｅビーム・リソグラフィ装置によって反応性層１０
０表面を横切って走査するときのＥビームを表わす。Ｅ
ビーム線１６ｃが走行する径路１８ｃは反応性層１０を
通過し、半導体基板１４に入る。他のＥビーム線も同様
に反応性層１０および半導体基板１４に入る。Ｅビーム
が反応性層１０内および半導体基板１４の結晶構造内の
原子と衝突するとき、ある割合の電子が、破線２０ｃに
よって示されるように反応性層１０に後方散乱される。Lines 16a, 16b, 16c, 16d and 16e
The reactive layer 10 is formed by an E-beam lithography apparatus.
0 represents the E-beam as it scans across the 0 surface. E
A path 18c along which beam ray 16c travels passes through reactive layer 10 and enters semiconductor substrate 14. Other E-beam rays similarly enter reactive layer 10 and semiconductor substrate 14. When the E-beam collides with atoms within reactive layer 10 and within the crystal structure of semiconductor substrate 14, a percentage of electrons are backscattered into reactive layer 10, as shown by dashed line 20c.
これらの後方散乱電子が上記Ｅビーム近接効果の主たる
原因である。These backscattered electrons are the main cause of the E-beam proximity effect.
第１ａ図では、照射部分２２ａ、２２ｂ、２．２ｃ。In FIG. 1a, the illuminated portions 22a, 22b, 2.2c.
２２ｄおよび２２ｅは、それらに対応するＥビーム線１
６ａ〜１６ｅからの照射エネルギが同じエネルギ・レベ
ルであったとしても異なった幅になることがわかる。す
なわち、中央の照射部分２２ｃは幅Ｗ１を有し、２つの
照射部分２２ｂ、２２ｄはより小さな幅Ｗ２を有し、外
側の照射部分２２ａ、２２ｅはさらに小さな幅Ｗ３を有
する。そこで、照射部分２２ａ〜２２ｅ間の非照射部分
２４．２６．２８および３０も幅が変わる。たとえば、
非照射部分２６および２８は幅Ｓ１を有し、非照射部分
２４．３０は幅Ｓ２を有する。非照射部分３２．３４は
照射部分２２ａ〜２２ｅ によって形成される格子パ
ターン３６を囲む周辺領域である。22d and 22e are the corresponding E beam lines 1
It can be seen that even though the irradiation energies from 6a to 16e have the same energy level, they have different widths. That is, the central illuminated portion 22c has a width W1, the two illuminated portions 22b, 22d have a smaller width W2, and the outer illuminated portions 22a, 22e have an even smaller width W3. Therefore, the non-irradiated portions 24, 26, 28 and 30 between the irradiated portions 22a to 22e also change in width. for example,
The non-illuminated portions 26 and 28 have a width S1 and the non-irradiated portion 24.30 has a width S2. The non-irradiated portions 32,34 are peripheral areas surrounding the grating pattern 36 formed by the illuminated portions 22a-22e.
照射部分２２ｃが最大幅を持つ理由は、他の照射部分よ
りも多くの後方散乱電子、したがって多くの背景エネル
ギ（ｂａｃｋｇｒｏｕｎｄ ｅｎｅｒｇｙ）を受けるか
らである。同様に、照射部分２２ｂおよび２２ｄはそれ
らが多くの後方散乱背景エネルギを受けるから照射部分
２２ａおよび２２ｅより幅広くなム一般的にいうと、格
子パターンの中央に近い照射部分は、格子パターンの端
部に近い照射部分は、両者が受けた直接露出エネルギの
量が同じであっても、よシ大きくなる。The reason the illuminated portion 22c has the largest width is that it receives more backscattered electrons and therefore more background energy than other illuminated portions. Similarly, illuminated portions 22b and 22d are wider than illuminated portions 22a and 22e because they receive more backscattered background energy.Generally speaking, illuminated portions closer to the center of the grating pattern The illuminated area closer to will be larger, even though they both received the same amount of direct exposure energy.
第１ｂ図には、照射してから焼いた後の照射部分２２ａ
〜２２ｅが示されている。図面から判るように、照射部
分２２ａ〜２２ｅはほは同じ幅Ｗｆを有し、非照射部分
２４〜３０はほぼ同じ幅８ｆを有する。これは、照射後
に焼くことによって生じた、非照射部分２４〜３４から
照射部分２２ａ〜２２ｅへの分子移動のためである。FIG. 1b shows the irradiated area 22a after irradiation and baking.
~22e are shown. As can be seen from the drawings, the illuminated portions 22a-22e have substantially the same width Wf, and the non-irradiated portions 24-30 have approximately the same width 8f. This is due to the movement of molecules from the non-irradiated parts 24-34 to the irradiated parts 22a-22e caused by baking after irradiation.
照射部分２２ａおよび２２ｅは、それらがより多くの非
照射部分によって囲まれており、したがって移動可能な
分子のより大きな供給源に隣接するから、これら以外の
照射部分よシも余計に成長する。同様に、照射部分２２
ｂおよび２２ｄは、照射部分２２ｃよシも多くの非照射
部分によって囲まれているから照射部分２２ｃよりも余
計に成長する。したがって、一般的にいうと、照射後に
焼くことによって生じた分子移動のために、格子パター
ン３６の端部に近い照射部分は格子パターンの中心に近
い照射部分よりも多く成長する。The irradiated portions 22a and 22e also grow more than the other irradiated portions because they are surrounded by more non-irradiated portions and are therefore adjacent to a larger source of mobile molecules. Similarly, the irradiated portion 22
Since the irradiated portion 22c is also surrounded by many non-irradiated portions, the portions b and 22d grow more than the irradiated portion 22c. Therefore, generally speaking, the irradiated portions closer to the edges of the grating pattern 36 will grow more than the irradiated portions closer to the center of the grating pattern due to molecular movement caused by post-irradiation baking.
照射後に焼くことによって生じる拡散または分子移動効
果はＥビーム近接効果に正確に反対の傾向を持っている
ことに注意すべきである。したがって、反応性層の特性
および照射に焼く際のパラメータを正確に制御すること
によって、分子移動効果なＥビーム近接効果の補償に用
いることができる。It should be noted that the diffusion or molecular migration effects caused by post-irradiation baking have exactly the opposite tendency to the E-beam proximity effects. Therefore, by precisely controlling the properties of the reactive layer and the parameters during irradiation, it can be used to compensate for E-beam proximity effects such as molecular migration effects.
本発明の方法は、アメリカ合衆国カリフォルニア用す＝
−ヘイルのＡ Ｚ Ｐｈｏｔｏ Ｐｒｏｄａｃｔｓに
よって製造されたＡＺ−５２１４を用いて反応性層を形
成したとき効果的であることが判った。ＡＺ−５２１４
は公称上、ポジ型フォトレジストである。The method of the present invention is applicable to California, USA.
- It has been found effective when forming the reactive layer using AZ-5214 manufactured by AZ Photo Products of Hale. AZ-5214
is nominally a positive photoresist.
このフォトレジストは照射後に焼く間に像反転反応を受
け、ネガ型フォトレジストとなる。この像反転現象は、
５ｐａｋ他（Ａｍｅｒｉｃａｎ ＨｏｅｃｈｓｔＣｏｒ
ｐｏｒａｔｉｏｎ 、 ＡＺ Ｐｈｏｔｏｒｅｓｉｓｔ
、 ＰｒｏｄｕｃｔｓＧｒｏｕｐ 、 ５ｕｎｎｙｖａ
ｌｅ 、 Ｃａ１ｉｆｏｒｎｉａ による、”Ｍｅｃ
ｈａｎｉｓｍ ａｎｄ Ｌｉｔｈｏｇｒａｐｈｉｃ
Ｅｖａｌｕａｔｉｏｎｏｆ Ｉｍａｇｅ Ｒｅ
ｖｅｒｓａｌ ｉｎ ＡＺ −５２１４Ｐｈｏｔｏｒ
ｅｓｉｓｔ”に記載されている。This photoresist undergoes an image reversal reaction during baking after irradiation and becomes a negative photoresist. This image reversal phenomenon is
5pak et al. (American Hoechst Cor.
poration, AZ Photoresist
, ProductsGroup , 5unnyva
“Mec” by le, Ca1ifornia
Hanism and Lithographic
Evaluation of Image Re
versatile in AZ-5214Photor
esist”.
本発明の一実施例の方法においては、ＡＺ−５２１４フ
ォトレジストは従来通シにシリコン・ウエーファに塗付
され、次に、５０マイクロ・クーロン／剣ｄの照射強度
、２０ Ｋ ｅ Ｖの加速電圧でベクトル走査、可変形
状ＥビームＪＥＯＬ ＪＢＸ６ＡＩＩシステムによって
照射された。照射されたウエーファは次に周囲気圧下で
、１００℃〜１４０℃の温度で３０分以上焼かれた。Ａ
Ｚ Ｐｒｏｄｕｃｔｓから発売されている金属イオン
のない現像剤を用いて像反転したフォトレジストを現像
して所望のマスクを形成した。In the method of one embodiment of the present invention, AZ-5214 photoresist is conventionally applied to a silicon wafer and then subjected to an irradiation intensity of 50 microcoulombs/d and an accelerating voltage of 20 K e V. was irradiated by a vector-scanned, variable-geometry E-beam JEOL JBX6AII system. The irradiated wafer was then baked under ambient pressure at a temperature of 100°C to 140°C for over 30 minutes. A
The image-reversed photoresist was developed using a metal ion-free developer available from Z Products to form the desired mask.
完成したマスクは照射部分の縁で材料集積（ｍａｔｅｒ
ｉａｌ ｂｕｉｌｄ−ｕｐ ）を呈し、また孤立した構
造部においてかなシの線幅増加が生じる。分子移動効果
は、照射線量、照射後に焼く際の温度および時間の複合
関数となると考えられる。The completed mask has material accumulation at the edge of the irradiated area.
ial build-up), and a sharp increase in line width occurs in isolated structures. Molecular transfer effects are believed to be a complex function of irradiation dose, post-irradiation baking temperature, and time.
観察された分子移動は、照射部分における可動分子がよ
り大きな比較的動きにくいポリマに変換果であると考え
られる。このような拡散は以前に他の情況で観察されて
いる。たとえば、Ｗａｌｋｅｒ″Ｒｅｄｕｃｔｉｏｎ
ｏｆＰｈｏｔｏｒｅｓｉｓｔ ｓｔａｎｄｉｎｇ Ｗａ
ｖｅＥｆｆｅｃｔｓ ｂｙ Ｐｏ５ｔ−Ｅｘｐｏｓｕｒ
ｅ Ｂａｋｅ″、ＩＥＥＥＴｒａｎｓａｃｔｉｏｎｓ
ｏｎ Ｅｌｅｃｔｒｏｎ Ｄｅｖｉｃｅ、 Ｊｕｌｙ１
９７５．４６４ページ、および８ ｔａｒｏｖｅ ＋″
Ｍｏｎｏｍｅｒ Ｒｅｄｉｓｔｒｉｂｕｔｉｏｎ ｉｎ
Ｄｒｙ ＤｅｖｅｌｏｐｅｄＸ−Ｒａｙ Ｒｅ５ｉｓ
ｔ”、 Ｖａｒｉａｎ Ａｓ５ｏｃｉａｔｅｓ Ｉｎｃ
を参照されたい。The observed molecular migration is believed to be the result of conversion of mobile molecules in the irradiated region into larger, relatively immobile polymers. Such diffusion has been previously observed in other contexts. For example, Walker″Reduction
ofPhotoresist standing Wa
veEffects by Po5t-Exposur
e Bake'', IEEE Transactions
on Electron Device, July1
975.464 pages, and 8 tarove+″
Monomer redistribution in
Dry DevelopedX-Ray Re5is
t”, Varian As5ociates Inc.
Please refer to
明らかに、照射を行なうと光活性化合物（ＰＡＣ）ン
は化学的に劣化してカルボ験酸を生成し、これにより、
照射後に焼く工程の間に触媒作用によυノボラック樹脂
（Ｎｏｖｏｌａｃ ｒｅｓｉｎ ）分子の間に架橋結合
反応を引起す。これによって、ＰＡＣ濃度門配がフォト
レジストの照射部分と非照射部分の間の表面の前後に形
成される。Ｐ Ａ Ｃ（Ｍｗ＝５００）は／ボア、り樹
脂（Ｍｗ ＝ ２，０００〜５０，０００ ）よシずり
と小さいから、ＰＡＣ分子の移動度は非常に高い。それ
故、ＰＡＣ分子は、照射後に焼く間に７オトレジストの
非照射部分から照射部分へ移動している小さな可動分子
であると想定される。Apparently, upon irradiation, photoactive compounds (PACs) chemically degrade to form carboxylic acids, which
During the post-irradiation baking step, a catalytic action causes a cross-linking reaction between the Novolac resin molecules. This creates a PAC concentration gate across the surface between the irradiated and non-irradiated portions of the photoresist. Since PAC (Mw = 500) is much smaller than the resin (Mw = 2,000 to 50,000), the mobility of PAC molecules is extremely high. Therefore, the PAC molecules are assumed to be small mobile molecules that migrate from the non-irradiated part of the 7-otresist to the irradiated part during baking after irradiation.
多くの文献が集積回路部品の製造過程において用いられ
る一通常の技術について詳細に鮮明していることに注意
されたい。たとえば、Ｐｒｅｓ ｔｏｎＰｕｂｌ ｉｓ
ｈｉｎｇ Ｃｏ、 、 Ｉｎｃ、によって刊行されたＳ
ｅｍ１ｃｏｎｄｕｃｔｏｒ ａｎｄ Ｉｎｔｅｇｒａｔ
ｅｄ Ｃ１ｒｃｕｉｔＦａｂｒｉｃａｔｉｏｎ Ｔｅｃ
ｈｎｉｑｕｅｓ”を参照のこと。これらの技術は、本発
明の構造の製造において一般的に用いることができる。It should be noted that many publications describe in detail one common technique used in the manufacturing process of integrated circuit components. For example, Pres tonPubli is
S published by hing Co, Inc.
em1conductor and Integrat
ed C1rcuit Fabrication Tec
These techniques can generally be used in the fabrication of the structures of the present invention.
また、個々の製造工程は市販の集積回路製造機械を用い
て実施できる。本発明の理解に特に必要なものとして、
好適実施例に関する概略の技術データが現在の技術を基
礎として示された。この技術を更に進めるためには当業
者に明らかなように、適当な調整が必まであろう。Additionally, individual manufacturing steps can be performed using commercially available integrated circuit manufacturing machines. As particularly necessary for understanding the invention:
General technical data regarding the preferred embodiment is presented on the basis of current technology. Appropriate adjustments will be necessary to further advance this technique, as will be apparent to those skilled in the art.
本発明は特定の好適実施例に関して説明したけれども、
前述の説明を読み、図面を検討することによって本発明
の種々の変形、修正は当業者には明らかになるであろう
。したがって、本発明の範囲は特許請求の範囲によって
決定されるべきであム〔発明の効果〕
以上詳細に説明したように、本発明を用いることにより
、従来技術に比較して格段に容易かつ経済的に電子ビー
ムの近接効果の補償を達成することができる。Although the invention has been described with respect to specific preferred embodiments,
Various variations and modifications of the invention will become apparent to those skilled in the art from reading the foregoing description and studying the drawings. Therefore, the scope of the present invention should be determined by the scope of the claims. [Effects of the Invention] As explained in detail above, by using the present invention, it is much easier and more economical than the prior art. It is possible to achieve compensation for the proximity effect of the electron beam.
第１Ａ図および第１Ｂ図は本発明の一実施例の主要部分
を説明する図、第２図は反応性層への電子ビームの照射
を説明する図である。
１０：反応性層、
１２：上表面、
１４：半導体基板、
２２ａ〜２２ｅ：照射部分、
３２〜３４：非照射部分、
３６：格子パターン。FIGS. 1A and 1B are diagrams for explaining the main parts of an embodiment of the present invention, and FIG. 2 is a diagram for explaining irradiation of the reactive layer with an electron beam. 10: Reactive layer, 12: Upper surface, 14: Semiconductor substrate, 22a to 22e: Irradiated portion, 32 to 34: Non-irradiated portion, 36: Grid pattern.
Claims (1)
部分の少なくとも一部から前記反応性層の照射部分の少
なくとも一部への分子移動を起こさせる電子ビーム近接
効果補償方法。A method for compensating the electron beam proximity effect, in which, after irradiating a reactive layer with an electron beam, molecules move from at least a portion of a non-irradiated portion of the reactive layer to at least a portion of an irradiated portion of the reactive layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US916662 | 1986-10-08 | ||
| US06/916,662 US4988284A (en) | 1986-10-08 | 1986-10-08 | Method for compensating for the E-beam proximity effect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6399526A true JPS6399526A (en) | 1988-04-30 |
| JP2546690B2 JP2546690B2 (en) | 1996-10-23 |
Family
ID=25437649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62254528A Expired - Lifetime JP2546690B2 (en) | 1986-10-08 | 1987-10-08 | Electron beam proximity effect compensation method |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4988284A (en) |
| JP (1) | JP2546690B2 (en) |
| DE (1) | DE3731897A1 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5736281A (en) * | 1996-06-07 | 1998-04-07 | Lucent Technologies Inc. | Dose modification proximity effect compensation (PEC) technique for electron beam lithography |
| US5847959A (en) * | 1997-01-28 | 1998-12-08 | Etec Systems, Inc. | Method and apparatus for run-time correction of proximity effects in pattern generation |
| US5849582A (en) * | 1997-05-01 | 1998-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Baking of photoresist on wafers |
| US6291118B1 (en) | 1998-03-27 | 2001-09-18 | Industrial Technology Research Institute | Elimination of proximity effect in photoresist |
| US6040119A (en) * | 1998-03-27 | 2000-03-21 | Industrial Technology Research Institute | Elimination of proximity effect in photoresist |
| US6426175B2 (en) | 1999-02-22 | 2002-07-30 | International Business Machines Corporation | Fabrication of a high density long channel DRAM gate with or without a grooved gate |
| US6051347A (en) * | 1999-03-18 | 2000-04-18 | Taiwan Semiconductor Manufacturing Company | Application of e-beam proximity over-correction to compensate optical proximity effect in optical lithography process |
| US6720565B2 (en) | 1999-06-30 | 2004-04-13 | Applied Materials, Inc. | Real-time prediction of and correction of proximity resist heating in raster scan particle beam lithography |
| US6606533B1 (en) | 2000-10-12 | 2003-08-12 | International Business Machines Corporation | Method and arrangement for controlling image size of integrated circuits on wafers through post-exposure bake hotplate-specific dose feedback |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60102735A (en) * | 1983-10-25 | 1985-06-06 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of treating electron beam resist |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4931381A (en) * | 1985-08-12 | 1990-06-05 | Hoechst Celanese Corporation | Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment |
| US4929536A (en) * | 1985-08-12 | 1990-05-29 | Hoechst Celanese Corporation | Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing |
-
1986
- 1986-10-08 US US06/916,662 patent/US4988284A/en not_active Expired - Fee Related
-
1987
- 1987-09-23 DE DE19873731897 patent/DE3731897A1/en not_active Withdrawn
- 1987-10-08 JP JP62254528A patent/JP2546690B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60102735A (en) * | 1983-10-25 | 1985-06-06 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of treating electron beam resist |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2546690B2 (en) | 1996-10-23 |
| US4988284A (en) | 1991-01-29 |
| DE3731897A1 (en) | 1988-04-14 |
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