JPS6477939A - System of forming resist pattern - Google Patents
System of forming resist patternInfo
- Publication number
- JPS6477939A JPS6477939A JP23540387A JP23540387A JPS6477939A JP S6477939 A JPS6477939 A JP S6477939A JP 23540387 A JP23540387 A JP 23540387A JP 23540387 A JP23540387 A JP 23540387A JP S6477939 A JPS6477939 A JP S6477939A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- polymer
- exposed
- generated
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
PURPOSE:To conduct the dry development of a resist easily by forming a polymer superposing layer onto the surface of a high molecular crosslinking section generated by exposing the negative type photoresist. CONSTITUTION:A negative type photo-resist 2 generating a crosslinking reaction by optical irradiation is applied onto a substrate 1. The resist of a polycinnamic acid group, a polyisoprene rubber, etc., is used as such a resist. The resist is exposed to a desired pattern by ultraviolet rays after vacuum drying. A crosslinking reaction is generated in the exposure section of the resist 2 by the exposure, and high molecular crosslinks 2a are shaped. The surface of the resist 2 is exposed to plasma or reactive ions generated by employing fluorocarbon gas. A gas used is changed into O2, and reactive ion etching by O2 gas is performed. Polymer superposing layers 26 are hardly etched to O2 plasma at that time, and function as protective films, and only sections not exposed not coated with the polymer superposing layers 26 are etched.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23540387A JPS6477939A (en) | 1987-09-18 | 1987-09-18 | System of forming resist pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23540387A JPS6477939A (en) | 1987-09-18 | 1987-09-18 | System of forming resist pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6477939A true JPS6477939A (en) | 1989-03-23 |
Family
ID=16985575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23540387A Pending JPS6477939A (en) | 1987-09-18 | 1987-09-18 | System of forming resist pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6477939A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5599654A (en) * | 1992-08-21 | 1997-02-04 | Fujitsu Limited | Process for forming patterned layer of fluorinated resin and devices containing same |
KR970051922A (en) * | 1995-12-29 | 1997-07-29 |
-
1987
- 1987-09-18 JP JP23540387A patent/JPS6477939A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5599654A (en) * | 1992-08-21 | 1997-02-04 | Fujitsu Limited | Process for forming patterned layer of fluorinated resin and devices containing same |
US6048786A (en) * | 1992-08-21 | 2000-04-11 | Fujitsu Limited | Process for forming fluorinated resin or amorphous carbon layer and devices containing same |
KR970051922A (en) * | 1995-12-29 | 1997-07-29 |
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