JPS5670547A - Minute pattern forming method - Google Patents

Minute pattern forming method

Info

Publication number
JPS5670547A
JPS5670547A JP14823179A JP14823179A JPS5670547A JP S5670547 A JPS5670547 A JP S5670547A JP 14823179 A JP14823179 A JP 14823179A JP 14823179 A JP14823179 A JP 14823179A JP S5670547 A JPS5670547 A JP S5670547A
Authority
JP
Japan
Prior art keywords
solvent
egmae
rays
monomer units
mixture containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14823179A
Other languages
Japanese (ja)
Other versions
JPS6058465B2 (en
Inventor
Tateo Kitamura
Yasuhiro Yoneda
Jiro Naito
Toshisuke Kitakoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP54148231A priority Critical patent/JPS6058465B2/en
Publication of JPS5670547A publication Critical patent/JPS5670547A/en
Publication of JPS6058465B2 publication Critical patent/JPS6058465B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To enhance resolution, by using a negative resist made of a polymer containing monomer units having 2 or more allkyl groups, and as its developing fluid, a solvent mixture containing ethyleneglycol monoalkyl ether (EGMAE) as a poor solvent. CONSTITUTION:In forming a micropattern with electron beams, X-rays, ultraviolet, rays, etc., a negative resist layer is formed on a substrate using a copolymer having monomer units each having 2 or more allyl groups, such as diallyl phthalate or triallyl cyanurate, and the resist layer is imagewise exposed, and developed with a solvent mixture containing EGMAE as a poor solvent and a good solvent such as dioxane or chlorobenzol, thus permitting cross-linking reaction on the exposed regions to be sufficiently accomplished, swelling, peeling, or the like to be prevented, therefore, deformation of the resist pattern not to occur, and a superior pattern of high resolution to be obtained.
JP54148231A 1979-11-15 1979-11-15 Fine pattern formation method Expired JPS6058465B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54148231A JPS6058465B2 (en) 1979-11-15 1979-11-15 Fine pattern formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54148231A JPS6058465B2 (en) 1979-11-15 1979-11-15 Fine pattern formation method

Publications (2)

Publication Number Publication Date
JPS5670547A true JPS5670547A (en) 1981-06-12
JPS6058465B2 JPS6058465B2 (en) 1985-12-20

Family

ID=15448194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54148231A Expired JPS6058465B2 (en) 1979-11-15 1979-11-15 Fine pattern formation method

Country Status (1)

Country Link
JP (1) JPS6058465B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56101148A (en) * 1980-01-16 1981-08-13 Toshiba Corp Photoresist developing method
JPS58187926A (en) * 1982-04-28 1983-11-02 Toyo Soda Mfg Co Ltd Method for developing radiation sensitive negative type resist

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56101148A (en) * 1980-01-16 1981-08-13 Toshiba Corp Photoresist developing method
JPH0145055B2 (en) * 1980-01-16 1989-10-02 Tokyo Shibaura Electric Co
JPS58187926A (en) * 1982-04-28 1983-11-02 Toyo Soda Mfg Co Ltd Method for developing radiation sensitive negative type resist
JPH0546535B2 (en) * 1982-04-28 1993-07-14 Tosoh Corp

Also Published As

Publication number Publication date
JPS6058465B2 (en) 1985-12-20

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