KR970013064A - Micro pattern formation method of semiconductor device - Google Patents
Micro pattern formation method of semiconductor device Download PDFInfo
- Publication number
- KR970013064A KR970013064A KR1019950026721A KR19950026721A KR970013064A KR 970013064 A KR970013064 A KR 970013064A KR 1019950026721 A KR1019950026721 A KR 1019950026721A KR 19950026721 A KR19950026721 A KR 19950026721A KR 970013064 A KR970013064 A KR 970013064A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- lower layer
- pattern
- forming
- line width
- Prior art date
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
본 발명은 반도체 소자의 미세패턴 형성방법에 관한 것으로, 반도체 소자제조 공정중 리소그라피(Lithography) 공정에 있어서 광역단차가 존재하는 하부층위에 패턴을 형성할 경우, 감광막이 두껍게 도포되는 부분에 해당하는 마스크 패턴의 선폭을 작게하여 웨이퍼 전체에 걸쳐 균일한 선폭의 패턴을 형성함으로써 반도체소자 제조공정 여유도를 크기 함과 아울러, 반도체 소자의 수율 및 신뢰성을 증가시킬 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a fine pattern of a semiconductor device. In the case of forming a pattern on a lower layer having a wide area difference in a lithography process during a semiconductor device manufacturing process, a mask pattern corresponding to a portion where a photosensitive film is thickly applied By decreasing the line width of the semiconductor device to form a pattern having a uniform line width throughout the wafer, the margin of manufacturing process of the semiconductor device can be increased, and the yield and reliability of the semiconductor device can be increased.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제3A도는 본 발명에 따른 포토 마스크를 도시한 도면.3A shows a photomask according to the invention.
제3B도는 상기 제3A도의 마스크 패턴을 사용하여 하부층 상부에 감광막이 얇게 도포된 부위에서 형성된 패턴의 단면도.FIG. 3B is a cross-sectional view of the pattern formed at a portion where a photoresist film is thinly coated on the lower layer by using the mask pattern of FIG. 3A.
제3C 도는 상기 제3A도의 포토 마스크를 사용하여 하부층 상부에 감광막이 두껍게 도포된 부위에서 형성된 패턴의 단면도.3C is a cross-sectional view of a pattern formed at a portion where a photosensitive film is thickly applied on the lower layer by using the photo mask of FIG. 3A.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950026721A KR970013064A (en) | 1995-08-26 | 1995-08-26 | Micro pattern formation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950026721A KR970013064A (en) | 1995-08-26 | 1995-08-26 | Micro pattern formation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970013064A true KR970013064A (en) | 1997-03-29 |
Family
ID=66595513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950026721A KR970013064A (en) | 1995-08-26 | 1995-08-26 | Micro pattern formation method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970013064A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7371592B2 (en) | 2005-01-17 | 2008-05-13 | Samsung Electronics Co., Ltd. | Manufacturing method of thin film transistor array panel using an optical mask |
-
1995
- 1995-08-26 KR KR1019950026721A patent/KR970013064A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7371592B2 (en) | 2005-01-17 | 2008-05-13 | Samsung Electronics Co., Ltd. | Manufacturing method of thin film transistor array panel using an optical mask |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4988609A (en) | Method of forming micro patterns | |
KR970018110A (en) | Pattern Forming Method of Semiconductor Device | |
KR970013064A (en) | Micro pattern formation method of semiconductor device | |
KR950015617A (en) | Manufacturing method of fine pattern of semiconductor device | |
KR970009826B1 (en) | Formation of half-tone phase shift mask | |
KR970008372A (en) | Fine Pattern Formation Method of Semiconductor Device | |
KR960002587A (en) | Exposure method for preventing pattern irregularities at the wafer edge | |
KR950019916A (en) | Fine pattern formation method of photosensitive film | |
KR100358161B1 (en) | Method for manufacturing semiconductor device | |
KR980010603A (en) | Photomask manufacturing method | |
KR19990054909A (en) | Formation method of fine photoresist pattern using double photoresist | |
KR920005352A (en) | Micro pattern formation method using multilayer resist | |
JPH04283916A (en) | Semiconductor device production method | |
KR970003523A (en) | Contact hole formation method of semiconductor device | |
JPS60106132A (en) | Formation of pattern | |
KR960002592A (en) | Manufacturing method of semiconductor device | |
JPH05205990A (en) | Pattern forming method | |
KR940009769A (en) | Method of forming photoresist fine pattern of semiconductor device | |
KR970016754A (en) | Method of manufacturing mask for semiconductor device | |
JPS6370425A (en) | Fine pattern forming method | |
JPH0499016A (en) | Manufacture of semiconductor device | |
KR950025484A (en) | Method of forming chrome pattern of mask for semiconductor manufacturing | |
KR930006839A (en) | Micro Pattern Formation Method in Semiconductor Manufacturing Process | |
KR960032741A (en) | Fine Pattern Formation Method of Semiconductor Device | |
KR960039161A (en) | Pattern Forming Method in Manufacturing Semiconductor Device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |