KR970013064A - Micro pattern formation method of semiconductor device - Google Patents

Micro pattern formation method of semiconductor device Download PDF

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Publication number
KR970013064A
KR970013064A KR1019950026721A KR19950026721A KR970013064A KR 970013064 A KR970013064 A KR 970013064A KR 1019950026721 A KR1019950026721 A KR 1019950026721A KR 19950026721 A KR19950026721 A KR 19950026721A KR 970013064 A KR970013064 A KR 970013064A
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KR
South Korea
Prior art keywords
semiconductor device
lower layer
pattern
forming
line width
Prior art date
Application number
KR1019950026721A
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Korean (ko)
Inventor
김근영
Original Assignee
김주용
현대전자산업주식회사
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Application filed by 김주용, 현대전자산업주식회사 filed Critical 김주용
Priority to KR1019950026721A priority Critical patent/KR970013064A/en
Publication of KR970013064A publication Critical patent/KR970013064A/en

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Abstract

본 발명은 반도체 소자의 미세패턴 형성방법에 관한 것으로, 반도체 소자제조 공정중 리소그라피(Lithography) 공정에 있어서 광역단차가 존재하는 하부층위에 패턴을 형성할 경우, 감광막이 두껍게 도포되는 부분에 해당하는 마스크 패턴의 선폭을 작게하여 웨이퍼 전체에 걸쳐 균일한 선폭의 패턴을 형성함으로써 반도체소자 제조공정 여유도를 크기 함과 아울러, 반도체 소자의 수율 및 신뢰성을 증가시킬 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a fine pattern of a semiconductor device. In the case of forming a pattern on a lower layer having a wide area difference in a lithography process during a semiconductor device manufacturing process, a mask pattern corresponding to a portion where a photosensitive film is thickly applied By decreasing the line width of the semiconductor device to form a pattern having a uniform line width throughout the wafer, the margin of manufacturing process of the semiconductor device can be increased, and the yield and reliability of the semiconductor device can be increased.

Description

반도체소자의 미세패턴 형성방법Micro pattern formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3A도는 본 발명에 따른 포토 마스크를 도시한 도면.3A shows a photomask according to the invention.

제3B도는 상기 제3A도의 마스크 패턴을 사용하여 하부층 상부에 감광막이 얇게 도포된 부위에서 형성된 패턴의 단면도.FIG. 3B is a cross-sectional view of the pattern formed at a portion where a photoresist film is thinly coated on the lower layer by using the mask pattern of FIG. 3A.

제3C 도는 상기 제3A도의 포토 마스크를 사용하여 하부층 상부에 감광막이 두껍게 도포된 부위에서 형성된 패턴의 단면도.3C is a cross-sectional view of a pattern formed at a portion where a photosensitive film is thickly applied on the lower layer by using the photo mask of FIG. 3A.

Claims (2)

반도체소자의 미세패턴 형성방법에 있어서, 웨이퍼 상부에 하부층을 형성하는 단계와, 상기 하부층의 상부에 감광막을 도포하는 단계와, 상기 하부층의 단차에 의해 하부층 상부에 도포된 감광막의 두께차에 따라 패턴의 선폭을 달리한 포토 마스크를 위치시키는 단계와, 상기 포토 마스크를 사용하여 하부층 상부의 감광막을 노광 및 현상하여 웨이퍼 전체에 걸쳐 균일한 선폭의 패턴을 형성하는 단계를 구비하는 것을 특징으로 하는 반도체소자 미세패턴 형성방법.A method of forming a fine pattern of a semiconductor device, the method comprising: forming a lower layer on an upper surface of a wafer, applying a photosensitive film on an upper portion of the lower layer, and forming a pattern according to a thickness difference of the photosensitive film applied on an upper portion of the lower layer by a step of the lower layer. Positioning a photomask having a different line width, and forming a pattern having a uniform line width over the entire wafer by exposing and developing a photoresist film on the lower layer using the photo mask. Fine pattern formation method. 제1항에 있어서, 상기 포토 마스크는 하부층의 상부에 감광막이 두껍게 도포된 부분에 형성될 패턴의 선폭이 가늘게 되도록 형성될 것을 특징으로 하는 반도체소자 미세패턴 형성방법.The method of claim 1, wherein the photo mask is formed to have a thin line width of a pattern to be formed on a portion of the lower layer to which the photoresist is thickly applied.
KR1019950026721A 1995-08-26 1995-08-26 Micro pattern formation method of semiconductor device KR970013064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950026721A KR970013064A (en) 1995-08-26 1995-08-26 Micro pattern formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950026721A KR970013064A (en) 1995-08-26 1995-08-26 Micro pattern formation method of semiconductor device

Publications (1)

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KR970013064A true KR970013064A (en) 1997-03-29

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KR1019950026721A KR970013064A (en) 1995-08-26 1995-08-26 Micro pattern formation method of semiconductor device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7371592B2 (en) 2005-01-17 2008-05-13 Samsung Electronics Co., Ltd. Manufacturing method of thin film transistor array panel using an optical mask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7371592B2 (en) 2005-01-17 2008-05-13 Samsung Electronics Co., Ltd. Manufacturing method of thin film transistor array panel using an optical mask

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