KR940007610A

KR940007610A - Method of forming double photoresist fine pattern using oxidation treatment

Info

Publication number: KR940007610A
Application number: KR1019920015857A
Authority: KR
Inventors: 권성구; 김명선
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1992-09-01
Filing date: 1992-09-01
Publication date: 1994-04-27

Abstract

본 발명은 미세 패턴 형성에 관한 것으로, 특히 중간층을 사용하지 않는 산화 처리를 이용한 이중감광막 미세패턴 형성 방법에 관한 것으로, 식각될층(5) 상부에 하층감광막(1)을 두껍게 도포하여 타포러지를 평탄화 시킨 다음에 마스크를 사용하지 않고 상기 하층감광막(1)의 윗부분 일부를 빛에 노출시켜 노광지역(2)을 형성시는 제1단계에, 상기 제1단계 후에 상기 하층감광막(1)의 노광지역(2) 상부에 실리콘을 확산 시킨 다음에 상기 실리콘이 확산된 상기 하층 감광막(1)상부를 산화시켜 산화지역(3)을 형성하는 제2단계, 상기 제2단계 후에 상기 산화지역(3)상에 미세패턴 형성을 이루기 위해 상층감광막(4)을 증착하여 패턴 하는 제3단계, 및 상기 제3단계 후에 상기 상층감광막(4)증착후에 상기 산화지역(3)을 상기 상층감광막(4)의 패턴에 따라 선택 식각한 다음에 노광지역(2)과 하층감광막(1)을 RIE(reactive ion etching)방법으로 차례로 식각하여 미세패턴을 형성하는 제4단계로 이루어지는 것을 특징으로 하는 산화 처리를 이용한 이중감광막 미세 패턴 형성 방법에 관한 것이다.The present invention relates to the formation of a micropattern, and more particularly, to a method of forming a double photoresist film micropattern using an oxidation process without using an intermediate layer. After planarizing, the first step of forming an exposure area 2 by exposing a portion of the upper part of the lower layer photoresist film 1 to light without using a mask, and exposing the lower layer photoresist film 1 after the first step. A second step of diffusing silicon over the region 2 and then oxidizing the upper portion of the lower photosensitive film 1 on which the silicon is diffused to form an oxidation region 3, after the second step, the oxidation region 3 A third step of depositing and patterning the upper photoresist film 4 to form a fine pattern on the upper surface, and after depositing the upper photoresist film 4 after the third step, the oxidation zone 3 is formed in the upper photoresist film 4. Select etched according to the pattern Next, a fourth step of forming a fine pattern by sequentially etching the exposure area (2) and the lower layer photosensitive film (1) by a reactive ion etching (RIE) method, the method of forming a double photosensitive film fine pattern using an oxidation treatment It is about.

Description

Method of forming double photoresist fine pattern using oxidation treatment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 미세 패턴 형성도.1 is a fine pattern formation diagram according to the present invention.

Claims

In the method for forming a double photoresist film fine pattern using an oxidation process for etching the layer 5 to be etched deposited on the semiconductor substrate on which the device isolation insulating film 6 is formed, the lower layer on the layer 5 to be etched. A first step of forming the exposure area 2 by applying a thick photoresist film 1 to planarize the tarpaulin and then exposing a portion of the upper portion of the lower photoresist film 1 to light without using a mask. A second step of diffusing silicon over the exposed region 2 of the lower photosensitive layer 1 and then oxidizing the upper portion of the lower photosensitive layer 1 on which the silicon is diffused to form an oxidation region 3; A third step of depositing and patterning an upper photoresist film 4 to form a fine pattern on the oxidation zone 3 after a second step, and after depositing the upper photoresist film 4 after the third step, 3) the upper photoresist film 4 And forming a fine pattern by etching the exposure area (2) and the lower layer photoresist film (1) after selective etching according to the pattern of the pattern).

The method of claim 2, wherein the etching of the oxidation zone (3) in the fourth step comprises a fluorine-based etchant.

The method of claim 1, wherein the etching of the exposure region (2) and the lower layer photosensitive film (1) in the fourth step is a reactive ion etching (RIE) method.

※ Note: The disclosure is based on the initial application.