KR970018148A - Manufacturing method of fine pattern of semiconductor device - Google Patents

Manufacturing method of fine pattern of semiconductor device Download PDF

Info

Publication number
KR970018148A
KR970018148A KR1019950031464A KR19950031464A KR970018148A KR 970018148 A KR970018148 A KR 970018148A KR 1019950031464 A KR1019950031464 A KR 1019950031464A KR 19950031464 A KR19950031464 A KR 19950031464A KR 970018148 A KR970018148 A KR 970018148A
Authority
KR
South Korea
Prior art keywords
pattern
photoresist pattern
layer
sog layer
etched
Prior art date
Application number
KR1019950031464A
Other languages
Korean (ko)
Inventor
전준성
복철규
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950031464A priority Critical patent/KR970018148A/en
Publication of KR970018148A publication Critical patent/KR970018148A/en

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

본 발명은 반도체소자의 미세패턴 제조방법에 관한 것으로서, 피식각층상에 충분한 폭의 라인을 갖는 감광막 패턴을 형성하고 상기 구조의 전표면에 SOG층을 형성한 후, 상기 SOG층의 상부를 CMP 방법으로 제거하여 감광막패턴의 상부를 노출시킨 후, 상기 노출된 감광막패턴을 산소 플라즈마로 제거하여 SOG층 패턴을 형성하고, 이를 마스크로 피식각층을 식각하여 피식각층 패턴을 형성하였으므로, 감광막패턴의 라인을 충분한 폭을 갖도록 형성하므로 상이 반전된 SOG층 패턴의 경우에는 미세한 폭의 라인이 형성되므로 공정이 간단하고, 안정되게 미세한 라인을 형성하여 공정수율 및 소자 동작의 신뢰성을 향상시킬 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a micropattern of a semiconductor device, wherein a photoresist pattern having a sufficient width line is formed on an etched layer, and an SOG layer is formed on the entire surface of the structure, and then an upper part of the SOG layer is formed on a CMP method. After removing the photoresist pattern by exposing the upper portion of the photoresist pattern, the exposed photoresist pattern was removed with oxygen plasma to form an SOG layer pattern, and the etched layer was etched using a mask to form an etched layer pattern. Since the SOG layer pattern in which the phase is inverted is formed to have a sufficient width, a line having a fine width is formed, thereby simplifying the process and stably forming a fine line, thereby improving process yield and device operation reliability.

Description

반도체소자의 미세패턴 제조방법Manufacturing method of fine pattern of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 내지 제1E도는 본 발명에 따른 반도체소자의 미세패턴 제조 공정도.1A to 1E are fine pattern manufacturing process diagrams of a semiconductor device according to the present invention.

Claims (2)

소정의 반도체기판상에 피식각층을 형성하는 공정과, 상기 피식각층상에 감광막패턴을 형성하는 공정과, 상기 구조의 전표면에 상기 감광막패턴의 두께 보다 두꺼운 SOG층 형성가는 공정과, 상기 SOG층의 상측을 제거하여 감광막패턴을 노출시키는 공정과, 상기 감광막패턴을 제거하여 반전된 상을 갖는 SOG층 패턴을 형성하는 공정과, 상기 SOG층 패턴에 의해 노출되어 있는 피식각층을 제거하여 피식각층 패턴을 형성하는 공정을 구비하는 반도체소자의 미세패턴 제조방법.Forming a etched layer on a predetermined semiconductor substrate, forming a photoresist pattern on the etched layer, forming a SOG layer thicker than the thickness of the photoresist pattern on the entire surface of the structure, and the SOG layer Exposing the photoresist pattern by removing the upper side of the substrate; forming a SOG layer pattern having the inverted image by removing the photoresist pattern; and removing the etched layer exposed by the SOG layer pattern. Micropattern manufacturing method of a semiconductor device comprising the step of forming a. 제1항에 있어서, 상기 SOG층의 상측 제거 방법을 CMP로 실시하는 것을 특징으로 하는 반도체소자의 미세패턴 제조방법.The method of manufacturing a fine pattern of a semiconductor device according to claim 1, wherein the upper removal method of the SOG layer is performed by CMP. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950031464A 1995-09-22 1995-09-22 Manufacturing method of fine pattern of semiconductor device KR970018148A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950031464A KR970018148A (en) 1995-09-22 1995-09-22 Manufacturing method of fine pattern of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950031464A KR970018148A (en) 1995-09-22 1995-09-22 Manufacturing method of fine pattern of semiconductor device

Publications (1)

Publication Number Publication Date
KR970018148A true KR970018148A (en) 1997-04-30

Family

ID=66615881

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950031464A KR970018148A (en) 1995-09-22 1995-09-22 Manufacturing method of fine pattern of semiconductor device

Country Status (1)

Country Link
KR (1) KR970018148A (en)

Similar Documents

Publication Publication Date Title
KR960035802A (en) Fine pattern formation method and metal wiring formation method using the same
KR970018148A (en) Manufacturing method of fine pattern of semiconductor device
KR970077209A (en) Method of forming a contact hole in a semiconductor device
KR970013022A (en) Method for forming contact hole in semiconductor device
KR950034414A (en) Method of manufacturing photoresist pattern of semiconductor device
KR970053509A (en) Method of forming multiple metal layers in semiconductor devices
KR970018198A (en) Planarization method of semiconductor device
KR960026635A (en) Metal wiring formation method
KR950024261A (en) Rim type phase inversion mask and manufacturing method thereof
KR960015751A (en) Micro pattern formation method of semiconductor device
KR970077715A (en) Metal wiring formation method
KR960019517A (en) Method for manufacturing contact hole of semiconductor device
KR960026303A (en) Fine pattern formation method
KR930006839A (en) Micro Pattern Formation Method in Semiconductor Manufacturing Process
KR940007610A (en) Method of forming double photoresist fine pattern using oxidation treatment
KR970028816A (en) Method of forming photoresist pattern on stepped substrate
KR950025913A (en) Micro pattern formation method of semiconductor device
KR970054201A (en) Manufacturing method of mask rom
KR940018700A (en) Fine Pattern Formation Method of Semiconductor Device
KR970048997A (en) Micro pattern formation method of semiconductor device
KR960035816A (en) Contact formation method of semiconductor device
KR950033668A (en) Contact etching method of semiconductor device
KR970028815A (en) Fine pattern formation method of the film having high reflectance
KR970022517A (en) Photomask and its manufacturing method
KR960015741A (en) Contact hole formation method of semiconductor device

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination