KR960002507A - Mask and manufacturing method thereof - Google Patents

Mask and manufacturing method thereof Download PDF

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Publication number
KR960002507A
KR960002507A KR1019940015077A KR19940015077A KR960002507A KR 960002507 A KR960002507 A KR 960002507A KR 1019940015077 A KR1019940015077 A KR 1019940015077A KR 19940015077 A KR19940015077 A KR 19940015077A KR 960002507 A KR960002507 A KR 960002507A
Authority
KR
South Korea
Prior art keywords
wafer
resist
chromium
etched
mask
Prior art date
Application number
KR1019940015077A
Other languages
Korean (ko)
Other versions
KR0146243B1 (en
Inventor
문승찬
민영홍
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940015077A priority Critical patent/KR0146243B1/en
Publication of KR960002507A publication Critical patent/KR960002507A/en
Application granted granted Critical
Publication of KR0146243B1 publication Critical patent/KR0146243B1/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 발명은 반도체소자 제조시 사용되는 마스크 및 그 제조방법에 관한것으로, 포토 리소그라피공정시 웨이퍼상에 발생되는 단차에 의해 레지스트의 이미지 콘트라스트가 저하되는 것을 방지하기 위하여 상기 웨이퍼 상의 단차가 높은 지역에 해당되는 위치의 석영 기판의 일정 두께를 식각하여 마스크를 제조하고, 이를 사용하여 레지스트 패턴을 형성하는 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask used in the manufacture of a semiconductor device and a method of fabricating the same, and corresponds to a region having a high step height on the wafer in order to prevent the image contrast of the resist from being lowered due to the step generated on the wafer during the photolithography process. A method of manufacturing a mask by etching a predetermined thickness of a quartz substrate at a position to be used, and forming a resist pattern using the same.

Description

마스크 및 그 제조방법Mask and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 종래의 마스크를 사용하여 레지스트 패턴을 형성하는 단계를 도시한 도면,1 is a view showing a step of forming a resist pattern using a conventional mask,

제2도는 본 발명에 의해서 제조되는 마스크를 사용하여 레지스트 패턴을 형성하는 단계를 도시한 도면,2 shows a step of forming a resist pattern using a mask made by the present invention;

제3도는 본 발명에 의해 마스크를 제조하는 단계를 도시한 단면도.3 is a cross-sectional view showing a step of manufacturing a mask according to the present invention.

Claims (5)

웨이퍼상에 발생되는 단차에 의해 레지스트의 이미지 콘트라스트가 저하되는 것을 방지하기 위하여 상기 웨이퍼 상의 단차가 높은 지역에 해당되는 위치의 석용 기판의 일정 두께가 식각되어 이루어진 것을 특징으로 하는 마스크.And a predetermined thickness of the stone substrate at a position corresponding to a region having a high step on the wafer is etched to prevent the image contrast of the resist from being lowered due to the step generated on the wafer. 제1항에 있어서, 상기 웨이퍼 상의 단차 높이보다 5-25배의 두께로 석영기판이 식각된 것을 특징으로 하는 마스크.The mask of claim 1, wherein the quartz substrate is etched to a thickness of 5-25 times the height of the step on the wafer. 웨이퍼상에 발생되는 단차에 의해 레지스트의 이미지 콘트라스트가 저하되는 것을 방지하기 위하여 석영기판 상부에 전자-빔(E-Beam)용 레지스트를 도포하는 단계와, 전자 빔 노광기술을 사용하여 레지스트 패턴을 형성하는 단계와, 석영기판을 일정 두께 식각하고, 상기 레지스트 패턴을 제거하는 단계와, 크롬을 일정 두께로 증착하는 단계와, 상기 크롬을 일정부분 식각하여 크롬페턴을 형성하는 단계로 이루어진 단차를 갖는 마스크 제조방법.In order to prevent the image contrast of the resist from being lowered due to the step generated on the wafer, applying a resist for E-Beam on the quartz substrate and forming a resist pattern using an electron beam exposure technique. And etching the quartz substrate, removing the resist pattern, depositing chromium to a predetermined thickness, and etching the chromium to form a chromium pattern. Manufacturing method. 제3항에 있어서, 상기 크롬이 식각되는 지역은 웨이퍼상에 단차가 높은 지역인 것을 특징으로 하는 마스크 제조방법.The method of claim 3, wherein the region where the chromium is etched is a region having a high level on the wafer. 제4항에 있어서, 상기 크롬이 식각되는 두께는 웨이퍼의 단차의 크기보다 5-25배 정도의 두께로 식각하는 것을 특징으로 하는 마스크 제조방법.The method of claim 4, wherein the chromium is etched to a thickness of about 5-25 times greater than the size of the wafer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940015077A 1994-06-29 1994-06-29 Exposure mask and the manufacturing method thereof KR0146243B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940015077A KR0146243B1 (en) 1994-06-29 1994-06-29 Exposure mask and the manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940015077A KR0146243B1 (en) 1994-06-29 1994-06-29 Exposure mask and the manufacturing method thereof

Publications (2)

Publication Number Publication Date
KR960002507A true KR960002507A (en) 1996-01-26
KR0146243B1 KR0146243B1 (en) 1998-11-02

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ID=19386572

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940015077A KR0146243B1 (en) 1994-06-29 1994-06-29 Exposure mask and the manufacturing method thereof

Country Status (1)

Country Link
KR (1) KR0146243B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030071061A (en) * 2002-02-27 2003-09-03 주식회사 엘지이아이 PIP audio listening apparatus for DTV

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030071061A (en) * 2002-02-27 2003-09-03 주식회사 엘지이아이 PIP audio listening apparatus for DTV

Also Published As

Publication number Publication date
KR0146243B1 (en) 1998-11-02

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