KR940004746A - Positive resist pattern formation method - Google Patents

Positive resist pattern formation method Download PDF

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Publication number
KR940004746A
KR940004746A KR1019920015517A KR920015517A KR940004746A KR 940004746 A KR940004746 A KR 940004746A KR 1019920015517 A KR1019920015517 A KR 1019920015517A KR 920015517 A KR920015517 A KR 920015517A KR 940004746 A KR940004746 A KR 940004746A
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KR
South Korea
Prior art keywords
resist
region
mask
resist pattern
silicide
Prior art date
Application number
KR1019920015517A
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Korean (ko)
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KR960002239B1 (en
Inventor
복철규
원태경
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019920015517A priority Critical patent/KR960002239B1/en
Publication of KR940004746A publication Critical patent/KR940004746A/en
Application granted granted Critical
Publication of KR960002239B1 publication Critical patent/KR960002239B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

본 발명은 반도체 소자의 포지티브 패턴 형성방법에 관한 것으로, 예정된 물질층 상부에 근자외선용 실리레이선 레지스트를 도포한 다음, 마스크를 올려놓고 원자외선으로 레지스트 상부에 일정두께를 노광시켜 경화 영역을 형성하는 단계와, 상기 마스크를 제거하고 근자외선으로 레지스트 전체 표면을 마스크 없이 노광시키는 단계와, 실리레이션 공정을 실시하여 상기 경화 영역이 아닌 영역의 레지스트 상부의 일정두께에 실리레이션 영역을 형성하는 단게와, 산소 플라즈마를 이용하여 실리레이션 영역 상부면에 옥사이드를 형성하여 마스크층을 형성하고, 동시에 상기 노광영역과 그 하부의 레지스트를 제거하여 포지티브 레지스트 패턴을 형성하는 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a positive pattern of a semiconductor device, and to apply a near-ultraviolet silica resist on a predetermined material layer, and then, by placing a mask and exposing a predetermined thickness on the resist with far ultraviolet rays to form a cured region. Removing the mask, exposing the entire surface of the resist with a near ultraviolet ray without a mask, and performing a silicide process to form a silicide region at a predetermined thickness on the resist in the non-cured region; Oxide plasma is used to form an oxide on the upper surface of the silicide region to form a mask layer, and at the same time to remove the exposure region and the resist below it to form a positive resist pattern.

Description

포지티브 레지스트 패턴 형성방법Positive resist pattern formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2D도는 본 발명에 의한 포지티브 레지스트 페턴 형성단계를 도시한 단면도.2A to 2D are cross-sectional views showing a positive resist pattern forming step according to the present invention.

Claims (1)

레지스트 패턴 형성방법에 있어서, 예정된 물질충 상부에 근자외선용 실리레이션 레지스트를 도포한 다음, 마스크를 올려놓고 원자외선으로 레지스트 상부의 일정두께를 노광시켜 경화 영역을 형성하는 단계와, 상기 마스크를 제거하고 근자외선으로 레지스트 전체 표면을 마스크 없이 노광시키는 단계와, 실리레이션 공정을 실시하여 상기 경화 영역이 아닌 영역의 레지스트 상부의 일정두께에 실리레이션 영역을 형성하는 단계와, 산소 플라즈마를 이용하여 실리레이션 영역 상부면에 옥사이드를 형성하여 마스크층을 형성하고, 동시에 상기 노광영역과 그 하부의 레지스트를 제거하여 포지티브 레지스트 패턴을 형성하는 단계를 포함하는 것을 특징으로 하는 레지스트 패턴 형성방법.A method of forming a resist pattern, the method comprising: applying a near-ultraviolet silication resist on top of a predetermined material layer, and then placing a mask to expose a predetermined thickness of the resist with far ultraviolet rays to form a hardened region, and removing the mask Exposing the entire surface of the resist without a mask to near-ultraviolet rays, and performing a silicide process to form a silicide region at a predetermined thickness on top of the resist in a region other than the hardened region, and by using an oxygen plasma. Forming a mask layer by forming an oxide on the upper surface of the region, and simultaneously removing the exposure region and the resist under the same to form a positive resist pattern. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920015517A 1992-08-28 1992-08-28 Method of resist patterning KR960002239B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920015517A KR960002239B1 (en) 1992-08-28 1992-08-28 Method of resist patterning

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920015517A KR960002239B1 (en) 1992-08-28 1992-08-28 Method of resist patterning

Publications (2)

Publication Number Publication Date
KR940004746A true KR940004746A (en) 1994-03-15
KR960002239B1 KR960002239B1 (en) 1996-02-13

Family

ID=19338621

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920015517A KR960002239B1 (en) 1992-08-28 1992-08-28 Method of resist patterning

Country Status (1)

Country Link
KR (1) KR960002239B1 (en)

Also Published As

Publication number Publication date
KR960002239B1 (en) 1996-02-13

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