KR950009942A - Pattern formation method of semiconductor device - Google Patents

Pattern formation method of semiconductor device Download PDF

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Publication number
KR950009942A
KR950009942A KR1019930019531A KR930019531A KR950009942A KR 950009942 A KR950009942 A KR 950009942A KR 1019930019531 A KR1019930019531 A KR 1019930019531A KR 930019531 A KR930019531 A KR 930019531A KR 950009942 A KR950009942 A KR 950009942A
Authority
KR
South Korea
Prior art keywords
insulating film
film
semiconductor device
photosensitive film
etching
Prior art date
Application number
KR1019930019531A
Other languages
Korean (ko)
Inventor
김영식
복철규
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930019531A priority Critical patent/KR950009942A/en
Publication of KR950009942A publication Critical patent/KR950009942A/en

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Abstract

본 발명은 반도체 소자의 패턴 형성방법에 관한 것으로, 감광막(2)을 도포하고 마스크(3)을 사용하여 패턴형성 부위의 표면을 노광(4)시켜 상기 감광막(2)의 표면 일부만을 현상하는 단계와; 전체구조 상부에 절연막(5)을 도포한 후 상기 절연막(4)을 식각하되 패턴형성된 상기 감광막(2)상에 형성된 절연막(5)을 잔류시키는 단계와; 잔류된 절연막(5)을 식각장벽으로 상기 감광막(2)을 식각하여 원하는 패턴을 형성하는 단계를 포함하여 이루어짐으로써 종래의 다층감광막에 의한 패턴 형성기술에 비해 공정단계 및 원재료의 사용량은 줄이면서 파티클에 의한 오염은 감소시키는 이중의 효과를 얻을 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a pattern of a semiconductor device, the method comprising: applying a photosensitive film (2) and exposing (4) the surface of a pattern formation site using a mask (3) to develop only a part of the surface of the photosensitive film (2) Wow; Applying an insulating film (5) over the entire structure and etching the insulating film (4), but leaving the insulating film (5) formed on the patterned photosensitive film (2); Forming a desired pattern by etching the photoresist film 2 with the remaining insulating film 5 as an etch barrier, thereby reducing the use of particles and processing steps and raw materials, Pollution by can achieve the dual effect of reducing.

Description

반도체 소자의 패턴 형성방법Pattern formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 패턴 형성 공정 단면도.1 is a cross-sectional view of a pattern forming process according to the present invention.

Claims (1)

반도체 소자의 패턴 형성방법에 있어서, 감광막(2)을 도포하고 마스크(3)를 사용하여 패턴형성 부위의 표면을 노광(4)시켜 상기 감광막(2)의 표면 일부만을 현상하는 단계와; 전체구조 상부에 절연막(5)을 도포한 후 상기 절연막(4)을 식각하되 패턴형성된 상기 감광막(2)상에 형성된 절연막(5)을 잔류시키는 단계와; 잔류된 절연막(5)을 식각장벽으로 상기 감광막(2)을 식각하여 원하는 패턴을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 패턴 형성방법.A pattern forming method of a semiconductor device, comprising: applying a photosensitive film (2) and exposing (4) the surface of a pattern formation site using a mask (3) to develop only a portion of the surface of the photosensitive film (2); Applying an insulating film (5) over the entire structure and etching the insulating film (4), but leaving the insulating film (5) formed on the patterned photosensitive film (2); Forming a desired pattern by etching the photosensitive film (2) using the remaining insulating film (5) as an etch barrier. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930019531A 1993-09-23 1993-09-23 Pattern formation method of semiconductor device KR950009942A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930019531A KR950009942A (en) 1993-09-23 1993-09-23 Pattern formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930019531A KR950009942A (en) 1993-09-23 1993-09-23 Pattern formation method of semiconductor device

Publications (1)

Publication Number Publication Date
KR950009942A true KR950009942A (en) 1995-04-26

Family

ID=66823998

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930019531A KR950009942A (en) 1993-09-23 1993-09-23 Pattern formation method of semiconductor device

Country Status (1)

Country Link
KR (1) KR950009942A (en)

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