KR940016565A - Lithography Process - Google Patents

Lithography Process Download PDF

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Publication number
KR940016565A
KR940016565A KR1019920026730A KR920026730A KR940016565A KR 940016565 A KR940016565 A KR 940016565A KR 1019920026730 A KR1019920026730 A KR 1019920026730A KR 920026730 A KR920026730 A KR 920026730A KR 940016565 A KR940016565 A KR 940016565A
Authority
KR
South Korea
Prior art keywords
pattern
film
lithography process
photoresist
photosensitive film
Prior art date
Application number
KR1019920026730A
Other languages
Korean (ko)
Inventor
김흥일
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019920026730A priority Critical patent/KR940016565A/en
Publication of KR940016565A publication Critical patent/KR940016565A/en

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Abstract

본 발명은 반도체 소자의 감광막 패턴을 형성할때 감광막이 두께에 따라 감광막 패턴의 패턴크기가 변화되는 것을 방지하기 위하여 패턴하고자 하는 하부층 상부에 하층 비반사막, 감광막 및 상층 비반사막을 적층한 다음, 리소그라피 공정에 의해 감광막 패턴을 형성하는 기술이다.In the present invention, when the photoresist pattern of the semiconductor device is formed, a lower antireflection film, a photoresist film, and an upper antireflection film are laminated on the lower layer to be patterned to prevent the pattern size of the photoresist pattern from changing according to thickness. It is a technique of forming a photosensitive film pattern by a process.

Description

리소그라피 공정방법Lithography Process

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2 도는 본 발명에 의해 감광막 상부 및 하부에 비반사막을 형성한 단면도.2 is a cross-sectional view of the anti-reflection film formed on the upper and lower photosensitive film according to the present invention.

Claims (1)

감광막패턴 방법에 있어서, 패턴하고자 하는 하부층 상부에 하층 비반사막, 감광막 및 상층 비반사막을 적층한 다음, 리소그라피 공정에 의해 감광막 패턴을 형성하는 것을 특징으로 하는 리소그라피 공정방법.A photosensitive film pattern method, wherein a lower antireflective film, a photosensitive film, and an upper antireflective film are laminated on a lower layer to be patterned, and then a photosensitive film pattern is formed by a lithography process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920026730A 1992-12-30 1992-12-30 Lithography Process KR940016565A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920026730A KR940016565A (en) 1992-12-30 1992-12-30 Lithography Process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920026730A KR940016565A (en) 1992-12-30 1992-12-30 Lithography Process

Publications (1)

Publication Number Publication Date
KR940016565A true KR940016565A (en) 1994-07-23

Family

ID=67215260

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920026730A KR940016565A (en) 1992-12-30 1992-12-30 Lithography Process

Country Status (1)

Country Link
KR (1) KR940016565A (en)

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