KR920015439A - Metal contact manufacturing method of semiconductor device - Google Patents

Metal contact manufacturing method of semiconductor device Download PDF

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Publication number
KR920015439A
KR920015439A KR1019910000578A KR910000578A KR920015439A KR 920015439 A KR920015439 A KR 920015439A KR 1019910000578 A KR1019910000578 A KR 1019910000578A KR 910000578 A KR910000578 A KR 910000578A KR 920015439 A KR920015439 A KR 920015439A
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KR
South Korea
Prior art keywords
semiconductor device
metal contact
oxide film
contact manufacturing
manufacturing
Prior art date
Application number
KR1019910000578A
Other languages
Korean (ko)
Other versions
KR0179008B1 (en
Inventor
서현환
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910000578A priority Critical patent/KR0179008B1/en
Publication of KR920015439A publication Critical patent/KR920015439A/en
Application granted granted Critical
Publication of KR0179008B1 publication Critical patent/KR0179008B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음No content

Description

반도체소자의 메탈 콘택 제조방법Metal contact manufacturing method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 공정단면도.2 is a cross-sectional view of the process of the present invention.

Claims (1)

실리콘 기판위에 질화막을 형성하여 패터닝하고 열적 산화막을 성장시키는 공정과, 상기 열적 산화막과 질화막을 제거하고 필드 산화막을 성장시키는 공정과, 게이트를 형성하고 커패시터를 제조한 후 산화막과 메탈을 형성하는 공정을 차례로 실시하여서 이루어짐을 특징으로 하는 반도체소자의 메탈 콘택 제조방법.Forming and patterning a nitride film on a silicon substrate, growing a thermal oxide film, removing the thermal oxide film and the nitride film, growing a field oxide film, forming a gate, manufacturing a capacitor, and then forming an oxide film and a metal. Method of manufacturing a metal contact of a semiconductor device, characterized in that carried out in sequence. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910000578A 1991-01-15 1991-01-15 Method of manufacturing metal contact KR0179008B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910000578A KR0179008B1 (en) 1991-01-15 1991-01-15 Method of manufacturing metal contact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910000578A KR0179008B1 (en) 1991-01-15 1991-01-15 Method of manufacturing metal contact

Publications (2)

Publication Number Publication Date
KR920015439A true KR920015439A (en) 1992-08-26
KR0179008B1 KR0179008B1 (en) 1999-04-15

Family

ID=19309847

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910000578A KR0179008B1 (en) 1991-01-15 1991-01-15 Method of manufacturing metal contact

Country Status (1)

Country Link
KR (1) KR0179008B1 (en)

Also Published As

Publication number Publication date
KR0179008B1 (en) 1999-04-15

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