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반도체 장치 및 그 제조방법Semiconductor device and manufacturing method thereof
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명 반도체 소자의 단면도.2 is a cross-sectional view of the semiconductor device of the present invention.
Claims (2)
게이트와 금속선간의 절연막으로 BPSG를 리플로우 공정으로 형성하되 상기 BPSG와 게이트 사이에 PECV 방법에 의해 실리콘 질하막을 형성함을 특징으로 하는 반도체장치.A BPSG is formed by an insulating film between a gate and a metal line in a reflow process, and a silicon nitride film is formed between the BPSG and the gate by a PECV method.BPSG의 표면 평탄화를 이루기 위한 리플로우 공정을 O2기체 분위기에서 실리함을 특징으로 하는 반도체방법.A reflow process for achieving surface planarization of BPSG is carried out in an O 2 gas atmosphere.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900018188A1990-11-101990-11-10
Semiconductor device and manufacturing method thereof
KR920010765A
(en)