KR910019193A - Corrosion prevention wiring formation method of semiconductor device - Google Patents

Corrosion prevention wiring formation method of semiconductor device Download PDF

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Publication number
KR910019193A
KR910019193A KR1019900005004A KR900005004A KR910019193A KR 910019193 A KR910019193 A KR 910019193A KR 1019900005004 A KR1019900005004 A KR 1019900005004A KR 900005004 A KR900005004 A KR 900005004A KR 910019193 A KR910019193 A KR 910019193A
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KR
South Korea
Prior art keywords
semiconductor device
formation method
corrosion prevention
wiring formation
wiring layer
Prior art date
Application number
KR1019900005004A
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Korean (ko)
Other versions
KR930003840B1 (en
Inventor
조찬래
박윤세
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019900005004A priority Critical patent/KR930003840B1/en
Publication of KR910019193A publication Critical patent/KR910019193A/en
Application granted granted Critical
Publication of KR930003840B1 publication Critical patent/KR930003840B1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음No content

Description

반도체장치의 부식방지 배선형성방법Corrosion prevention wiring formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2 도는 본 발명에 따른 반도체장치의 배선층 형성방법을 설명하기 위한 도면으로서, (가)도는 다층배선인 경우 1차 배선층을 도시한 반도체 장치의 단면도, (나)도는 단층배선인 경우 배선층을 도시한 반도체 장치의 단면도이다.FIG. 2 is a view for explaining a wiring layer forming method of a semiconductor device according to the present invention. 1 is a cross-sectional view of a semiconductor device.

Claims (1)

실리콘기판(1)상의 실리콘 산화막(2)을 에칭하여 접촉홀을 형성한 후 배선층을 형성하는 반도체장치의 배선층 형성방법에 있어서, 접촉을 형성후 AlSicu막(3)을 증착시켜 배선홀을 형성하고, 상기 AlSicu막(3)위에 배선층 두깨의 대략 1%에 상당하는 두께로 AlSi(4)을 배선층 보호막으로 증착함을 특징으로 하는 반도체장치의 부식 방지 배선형성 방법.In a method of forming a wiring layer of a semiconductor device in which a silicon oxide film (2) on a silicon substrate (1) is etched to form a contact hole, and then a wiring layer is formed. And AlSi (4) is deposited on the AlSicu film (3) with a thickness of approximately 1% of the thickness of the wiring layer as a wiring layer protective film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900005004A 1990-04-11 1990-04-11 Corrosion protection and forming wiring method of semiconductor device KR930003840B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900005004A KR930003840B1 (en) 1990-04-11 1990-04-11 Corrosion protection and forming wiring method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900005004A KR930003840B1 (en) 1990-04-11 1990-04-11 Corrosion protection and forming wiring method of semiconductor device

Publications (2)

Publication Number Publication Date
KR910019193A true KR910019193A (en) 1991-11-30
KR930003840B1 KR930003840B1 (en) 1993-05-13

Family

ID=19297912

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900005004A KR930003840B1 (en) 1990-04-11 1990-04-11 Corrosion protection and forming wiring method of semiconductor device

Country Status (1)

Country Link
KR (1) KR930003840B1 (en)

Also Published As

Publication number Publication date
KR930003840B1 (en) 1993-05-13

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