KR920022400A - Contact hole etching method of semiconductor device - Google Patents

Contact hole etching method of semiconductor device Download PDF

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Publication number
KR920022400A
KR920022400A KR1019910007905A KR910007905A KR920022400A KR 920022400 A KR920022400 A KR 920022400A KR 1019910007905 A KR1019910007905 A KR 1019910007905A KR 910007905 A KR910007905 A KR 910007905A KR 920022400 A KR920022400 A KR 920022400A
Authority
KR
South Korea
Prior art keywords
contact hole
etching method
semiconductor device
hole etching
film
Prior art date
Application number
KR1019910007905A
Other languages
Korean (ko)
Inventor
이수천
박승갑
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910007905A priority Critical patent/KR920022400A/en
Publication of KR920022400A publication Critical patent/KR920022400A/en

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Abstract

내용 없음.No content.

Description

반도체 장치의 콘택트 홀 식각방법Contact hole etching method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 개략적인 공정도.1 is a schematic process diagram according to the present invention.

Claims (2)

반도체 장치에 있어서, 실리콘기판(1)과, 상기 실리콘기판(1)상부에 형성된 산화막(2)과, 상기 산화막(2) 상부에 감광막(3)을 형성하여 통상의 사진식각 공정으로 콘택트 홀(11)을 형성한뒤 상기 콘택트 홀(11)을 통상의 식각공정인 건식, 습식, 화학 건식 식각방법을 통하여 식각한뒤 아르곤 가스 스퍼터링(Ar-Gas Sputtering)식각을 추가하여 상기의 콘택트홀(11) 식각 형상을 개선한후 금속 배선막(9)을 도포하여 스텝 커버리지를 향상시키는 것을 특징으로 하는 반도체장치의 콘택트 홀 식각방법.In a semiconductor device, a silicon substrate (1), an oxide film (2) formed on the silicon substrate (1), and a photosensitive film (3) are formed on the oxide film (2) to form a contact hole in a normal photolithography process. After forming 11), the contact hole 11 is etched through a dry, wet, or chemical dry etching method, which is a conventional etching process, and then argon gas sputtering is added to the contact hole 11. A contact hole etching method for a semiconductor device, characterized in that the step coverage is improved by applying a metal wiring film (9) after improving the etching shape. 제1항에 있어, 상기의 금속 배선막을 Ti, TiN, TiW등의 장벽 금속재료와 Al의 합금으로 된 것을 특징으로 하는 반도체장치의 콘택트 홀 식각방법.The contact hole etching method of claim 1, wherein the metal wiring film is formed of an alloy of Al with a barrier metal material such as Ti, TiN, TiW, and the like. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910007905A 1991-05-15 1991-05-15 Contact hole etching method of semiconductor device KR920022400A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910007905A KR920022400A (en) 1991-05-15 1991-05-15 Contact hole etching method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910007905A KR920022400A (en) 1991-05-15 1991-05-15 Contact hole etching method of semiconductor device

Publications (1)

Publication Number Publication Date
KR920022400A true KR920022400A (en) 1992-12-19

Family

ID=67432785

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910007905A KR920022400A (en) 1991-05-15 1991-05-15 Contact hole etching method of semiconductor device

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KR (1) KR920022400A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100940665B1 (en) * 2007-11-29 2010-02-05 주식회사 동부하이텍 Method for fabricating semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100940665B1 (en) * 2007-11-29 2010-02-05 주식회사 동부하이텍 Method for fabricating semiconductor device

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