KR910005099A - Formation of contact phase - Google Patents
Formation of contact phase Download PDFInfo
- Publication number
- KR910005099A KR910005099A KR1019890010977A KR890010977A KR910005099A KR 910005099 A KR910005099 A KR 910005099A KR 1019890010977 A KR1019890010977 A KR 1019890010977A KR 890010977 A KR890010977 A KR 890010977A KR 910005099 A KR910005099 A KR 910005099A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide layer
- etching
- formation
- connection window
- forming
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 본 발명에 따른 접속창 형성방법을 나타낸 공정순서의 단면도이다.2 is a cross-sectional view of a process procedure showing a method for forming a contact window according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019890010977A KR910006544B1 (en) | 1989-08-01 | 1989-08-01 | Process for forming contact hole |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019890010977A KR910006544B1 (en) | 1989-08-01 | 1989-08-01 | Process for forming contact hole |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910005099A true KR910005099A (en) | 1991-03-30 |
KR910006544B1 KR910006544B1 (en) | 1991-08-27 |
Family
ID=19288651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890010977A KR910006544B1 (en) | 1989-08-01 | 1989-08-01 | Process for forming contact hole |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR910006544B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9637899B2 (en) | 2013-03-01 | 2017-05-02 | Duravit Aktiengesellschaft | Vacuum breaker, automatic flushing system for toilet and electronic bidet toilet |
-
1989
- 1989-08-01 KR KR1019890010977A patent/KR910006544B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9637899B2 (en) | 2013-03-01 | 2017-05-02 | Duravit Aktiengesellschaft | Vacuum breaker, automatic flushing system for toilet and electronic bidet toilet |
Also Published As
Publication number | Publication date |
---|---|
KR910006544B1 (en) | 1991-08-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR910005099A (en) | Formation of contact phase | |
KR970008372A (en) | Fine Pattern Formation Method of Semiconductor Device | |
KR970023635A (en) | Fine Pattern Formation Method of Semiconductor Device | |
KR940016887A (en) | Method of forming fine gate electrode of semiconductor device | |
KR900002432A (en) | Method of forming side wall of semiconductor | |
KR960001875A (en) | Etch pattern formation method through photolithography process | |
KR910008802A (en) | Manufacturing Method of Semiconductor Device | |
KR970051889A (en) | Method for forming self-aligned mask of semiconductor device | |
KR960002550A (en) | Spacer Formation Method of Semiconductor Device | |
KR970077456A (en) | Method of forming a contact hole in a semiconductor device | |
KR920015459A (en) | Method of manufacturing phase shift mask of semiconductor memory device | |
KR900019195A (en) | High integration method of DRAM device | |
KR920020591A (en) | Method for manufacturing phase shift mask of semiconductor device | |
KR960015751A (en) | Micro pattern formation method of semiconductor device | |
KR960005791A (en) | Contact hole formation method of semiconductor device | |
KR970023756A (en) | Spacer Formation Method of Semiconductor Device | |
KR920005348A (en) | Planarization method between metal layers of semiconductor device | |
KR970049079A (en) | Metal Film Etching Method of Semiconductor Device | |
KR970054071A (en) | Cell Capacitor Formation Method of Semiconductor Device Using Double Spacer | |
KR950014972A (en) | Manufacturing Method of Semiconductor Device | |
KR980005631A (en) | Contact hole formation method | |
KR940009770A (en) | Silicide layer / polysilicon layer etching method | |
KR920007068A (en) | Standard Wafer Manufacturing Method for Step Coverage Measurement of Semiconductor Metal Thin Film | |
KR960035877A (en) | Gate electrode formation method | |
KR960026351A (en) | Spacer insulating layer formation method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20010706 Year of fee payment: 11 |
|
LAPS | Lapse due to unpaid annual fee |