KR960026395A - Method for forming conductive layer of semiconductor device - Google Patents

Method for forming conductive layer of semiconductor device Download PDF

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Publication number
KR960026395A
KR960026395A KR1019940038566A KR19940038566A KR960026395A KR 960026395 A KR960026395 A KR 960026395A KR 1019940038566 A KR1019940038566 A KR 1019940038566A KR 19940038566 A KR19940038566 A KR 19940038566A KR 960026395 A KR960026395 A KR 960026395A
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KR
South Korea
Prior art keywords
conductive layer
semiconductor device
forming
forming conductive
layer
Prior art date
Application number
KR1019940038566A
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Korean (ko)
Inventor
최준기
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940038566A priority Critical patent/KR960026395A/en
Publication of KR960026395A publication Critical patent/KR960026395A/en

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Abstract

본 발명은 반도체 소자의 도전층 형성방법에 관한 것으로, 티타늄나이트라이드층과 폴리층으로 이루어진 도전층을 형성하므로써 접착력과 콘덕턴스(conduct-ance)를 증가시킬 수 있는 반도체 소자의 도전층 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a conductive layer of a semiconductor device. The present invention relates to a method for forming a conductive layer of a semiconductor device capable of increasing adhesion and conductance by forming a conductive layer made of a titanium nitride layer and a poly layer. It is about.

Description

반도체 소자의 도전층 형성방법Method for forming conductive layer of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A 내지 제1C도는 본 발명에 따른 반도체 소자의 도전층 형성방법을 설명하기 위한 단면도.1A to 1C are cross-sectional views for explaining a method for forming a conductive layer of a semiconductor device according to the present invention.

Claims (2)

반도체 소자의 도전층 형성방법에 있어서, 웨이퍼상에 형성된 산화막의 상부에 티타늄나이트라이드층을 형성하는 단계와, 상기 티타늄나이트라이드층의 상부에 폴리층을 형성한 후 도판트를 주입하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 도전층 형성방법.A method for forming a conductive layer of a semiconductor device, comprising: forming a titanium nitride layer on top of an oxide film formed on a wafer, and injecting a dopant after forming a poly layer on the titanium nitride layer A conductive layer forming method of a semiconductor device, characterized in that. 제1항에 있어서, 상기 티타늄나이트라이드층은 웨이퍼 온도를 300 내지 400℃로 유지시키고 스퍼터링 공정에 의해 형성되는 것을 특징으로 하는 반도체 소자의 도전층 형성방법.The method of claim 1, wherein the titanium nitride layer is formed by a sputtering process while maintaining a wafer temperature at 300 to 400 ° C. 7. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940038566A 1994-12-29 1994-12-29 Method for forming conductive layer of semiconductor device KR960026395A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940038566A KR960026395A (en) 1994-12-29 1994-12-29 Method for forming conductive layer of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940038566A KR960026395A (en) 1994-12-29 1994-12-29 Method for forming conductive layer of semiconductor device

Publications (1)

Publication Number Publication Date
KR960026395A true KR960026395A (en) 1996-07-22

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940038566A KR960026395A (en) 1994-12-29 1994-12-29 Method for forming conductive layer of semiconductor device

Country Status (1)

Country Link
KR (1) KR960026395A (en)

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