KR970052938A - Cobalt Silicide Film Formation Method - Google Patents
Cobalt Silicide Film Formation Method Download PDFInfo
- Publication number
- KR970052938A KR970052938A KR1019950051941A KR19950051941A KR970052938A KR 970052938 A KR970052938 A KR 970052938A KR 1019950051941 A KR1019950051941 A KR 1019950051941A KR 19950051941 A KR19950051941 A KR 19950051941A KR 970052938 A KR970052938 A KR 970052938A
- Authority
- KR
- South Korea
- Prior art keywords
- cobalt silicide
- silicide film
- film
- forming
- film formation
- Prior art date
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Abstract
본 발명은 코발트실리사이드막 형성 방법에 있어서, 폴리실리콘막(1) 상에 코발트실리사이드막(CoSi2)(2)을 형성하는 단계; 상기 코발트실리사이드막(2) 상에 BPSG(borophosphosilicate glass)막(3)을 중착하는 단계; 및 상기 구조물을 900℃ 이상의 온도에서 RTA(rapid thermal anneal) 처리하는 단계를 포함하여 이루어지는 것을 특징으로 하는 코발트실리사이드막 형성방법에 관한 것으로, 짧은 시간에는 안정적인 구조를 형성하여 막 특성이 우수할 뿐만 아니라 RTA 방식 적용으로 웨이퍼의 수요 및 신뢰성 향상을 이룰 수 있다.The present invention provides a method for forming a cobalt silicide film, comprising: forming a cobalt silicide film (CoSi 2 ) 2 on a polysilicon film 1; Depositing a BPSG (borophosphosilicate glass) film 3 on the cobalt silicide film 2; And a method of forming a thermal thermal anneal (RTA) at a temperature of 900 ° C. or higher. RTA application can improve wafer demand and reliability.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 본 발명에 따라 RTA처리되는 코발트실리사이드막의 형성 단면도.1 is a cross-sectional view of a cobalt silicide film to be RTA treated according to the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950051941A KR970052938A (en) | 1995-12-19 | 1995-12-19 | Cobalt Silicide Film Formation Method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950051941A KR970052938A (en) | 1995-12-19 | 1995-12-19 | Cobalt Silicide Film Formation Method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970052938A true KR970052938A (en) | 1997-07-29 |
Family
ID=66645655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950051941A KR970052938A (en) | 1995-12-19 | 1995-12-19 | Cobalt Silicide Film Formation Method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970052938A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100508080B1 (en) * | 1998-11-13 | 2005-10-26 | 삼성전자주식회사 | Method of forming a self-aligned silicide layer in a semiconductor device |
-
1995
- 1995-12-19 KR KR1019950051941A patent/KR970052938A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100508080B1 (en) * | 1998-11-13 | 2005-10-26 | 삼성전자주식회사 | Method of forming a self-aligned silicide layer in a semiconductor device |
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