KR970052938A - Cobalt Silicide Film Formation Method - Google Patents

Cobalt Silicide Film Formation Method Download PDF

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Publication number
KR970052938A
KR970052938A KR1019950051941A KR19950051941A KR970052938A KR 970052938 A KR970052938 A KR 970052938A KR 1019950051941 A KR1019950051941 A KR 1019950051941A KR 19950051941 A KR19950051941 A KR 19950051941A KR 970052938 A KR970052938 A KR 970052938A
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KR
South Korea
Prior art keywords
cobalt silicide
silicide film
film
forming
film formation
Prior art date
Application number
KR1019950051941A
Other languages
Korean (ko)
Inventor
윤성렬
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950051941A priority Critical patent/KR970052938A/en
Publication of KR970052938A publication Critical patent/KR970052938A/en

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Abstract

본 발명은 코발트실리사이드막 형성 방법에 있어서, 폴리실리콘막(1) 상에 코발트실리사이드막(CoSi2)(2)을 형성하는 단계; 상기 코발트실리사이드막(2) 상에 BPSG(borophosphosilicate glass)막(3)을 중착하는 단계; 및 상기 구조물을 900℃ 이상의 온도에서 RTA(rapid thermal anneal) 처리하는 단계를 포함하여 이루어지는 것을 특징으로 하는 코발트실리사이드막 형성방법에 관한 것으로, 짧은 시간에는 안정적인 구조를 형성하여 막 특성이 우수할 뿐만 아니라 RTA 방식 적용으로 웨이퍼의 수요 및 신뢰성 향상을 이룰 수 있다.The present invention provides a method for forming a cobalt silicide film, comprising: forming a cobalt silicide film (CoSi 2 ) 2 on a polysilicon film 1; Depositing a BPSG (borophosphosilicate glass) film 3 on the cobalt silicide film 2; And a method of forming a thermal thermal anneal (RTA) at a temperature of 900 ° C. or higher. RTA application can improve wafer demand and reliability.

Description

코발트실리사이드막 형성방법.Cobalt silicide film formation method.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따라 RTA처리되는 코발트실리사이드막의 형성 단면도.1 is a cross-sectional view of a cobalt silicide film to be RTA treated according to the present invention.

Claims (1)

코발트실리사이드막 형성방법에 있어서, 폴리실리콘막(1) 상에 코발트실리사이드막(CoSi2)을 형성하는 단계; 상기 코발트실리사이드막 상에 BPSG막(3)을 중착하는 단계; 및 상기 구조물을 900℃ 이상의 온도에서 RTA(rapid thermal anneal) 처리하는 단계를 포함하여 이루어지는 것을 특징으로 하는 코발트실리사이드막 형성방법.A method of forming a cobalt silicide film, the method comprising: forming a cobalt silicide film (CoSi 2 ) on a polysilicon film (1); Depositing a BPSG film 3 on the cobalt silicide film; And treating the structure with a rapid thermal anneal (RTA) at a temperature of 900 ° C. or higher. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950051941A 1995-12-19 1995-12-19 Cobalt Silicide Film Formation Method KR970052938A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950051941A KR970052938A (en) 1995-12-19 1995-12-19 Cobalt Silicide Film Formation Method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950051941A KR970052938A (en) 1995-12-19 1995-12-19 Cobalt Silicide Film Formation Method

Publications (1)

Publication Number Publication Date
KR970052938A true KR970052938A (en) 1997-07-29

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ID=66645655

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950051941A KR970052938A (en) 1995-12-19 1995-12-19 Cobalt Silicide Film Formation Method

Country Status (1)

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KR (1) KR970052938A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100508080B1 (en) * 1998-11-13 2005-10-26 삼성전자주식회사 Method of forming a self-aligned silicide layer in a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100508080B1 (en) * 1998-11-13 2005-10-26 삼성전자주식회사 Method of forming a self-aligned silicide layer in a semiconductor device

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