KR920022385A - Semiconductor device having an additional oxide film and method of manufacturing the same - Google Patents

Semiconductor device having an additional oxide film and method of manufacturing the same Download PDF

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Publication number
KR920022385A
KR920022385A KR1019910007778A KR910007778A KR920022385A KR 920022385 A KR920022385 A KR 920022385A KR 1019910007778 A KR1019910007778 A KR 1019910007778A KR 910007778 A KR910007778 A KR 910007778A KR 920022385 A KR920022385 A KR 920022385A
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South Korea
Prior art keywords
oxide film
manufacturing
additional oxide
semiconductor device
additional
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KR1019910007778A
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Korean (ko)
Inventor
김동원
라사균
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문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to KR1019910007778A priority Critical patent/KR920022385A/en
Publication of KR920022385A publication Critical patent/KR920022385A/en

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Abstract

내용 없음.No content.

Description

부가 산화막을 갖는 반도체 장치 및 그 제조 방법Semiconductor device having an additional oxide film and method of manufacturing the same

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 제1실시예에 따른 부가 산화막을 갖는 반도체 장치의 제조 공정도이다.2 is a manufacturing process chart of a semiconductor device having an additional oxide film according to the first embodiment of the present invention.

Claims (2)

필드산화막이 형성된 반도체 기판상에 액티브 영역상으로 소정의 부분만큼 연장되고 상기 필드산화막과 일체형으로 형성된 부가산화막을 가지며, 상기 부가산화막상의 일정부분까지 연장시킨 게이트를 갖는 것을 특징으로 하는 부가 산화막을 갖는 반도체 장치.Having an additional oxide film formed on a semiconductor substrate on which a field oxide film is formed, extending by a predetermined portion onto an active region and integrally formed with the field oxide film, and having a gate extending to a predetermined portion on the additional oxide film. Semiconductor device. 반도체 기판상에 기초산화막, 질화막을 마스크로 이용하여 필드영역에 필드 산화막을 형성시키는 공정과, 상기 질화막과 상기 기초산화막의 양단을 일정길이만큼 식각하는 공정과, 상기 식각으로 노출된 상기 반도체 기판표면을 열산화시켜 부가산화막을 성장시키는 공정과, 남아있는 상기 질화막과 상기 기초산화막을 재거하고 게이트 산화막을 형성한후 상기 부가산화막상의 일정부분까지 연장된 게이트를 형성하는 공정으로 이루어진 부가산화막을 갖는 반도체 장치의 제조방법.Forming a field oxide film in a field region using a basic oxide film and a nitride film as a mask on a semiconductor substrate, etching both ends of the nitride film and the basic oxide film by a predetermined length, and the surface of the semiconductor substrate exposed by the etching process Thermal oxidation to grow an additional oxide film; and removing the remaining nitride film and the basic oxide film, forming a gate oxide film, and forming a gate extending to a predetermined portion on the additional oxide film. Method of manufacturing the device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910007778A 1991-05-14 1991-05-14 Semiconductor device having an additional oxide film and method of manufacturing the same KR920022385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910007778A KR920022385A (en) 1991-05-14 1991-05-14 Semiconductor device having an additional oxide film and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910007778A KR920022385A (en) 1991-05-14 1991-05-14 Semiconductor device having an additional oxide film and method of manufacturing the same

Publications (1)

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KR920022385A true KR920022385A (en) 1992-12-19

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KR1019910007778A KR920022385A (en) 1991-05-14 1991-05-14 Semiconductor device having an additional oxide film and method of manufacturing the same

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KR (1) KR920022385A (en)

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