KR910017617A - Method of manufacturing a semiconductor wafer - Google Patents

Method of manufacturing a semiconductor wafer Download PDF

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Publication number
KR910017617A
KR910017617A KR1019900003074A KR900003074A KR910017617A KR 910017617 A KR910017617 A KR 910017617A KR 1019900003074 A KR1019900003074 A KR 1019900003074A KR 900003074 A KR900003074 A KR 900003074A KR 910017617 A KR910017617 A KR 910017617A
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KR
South Korea
Prior art keywords
manufacturing
semiconductor wafer
trench capacitor
dielectric
breakdown
Prior art date
Application number
KR1019900003074A
Other languages
Korean (ko)
Other versions
KR920007536B1 (en
Inventor
박남규
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019900003074A priority Critical patent/KR920007536B1/en
Publication of KR910017617A publication Critical patent/KR910017617A/en
Application granted granted Critical
Publication of KR920007536B1 publication Critical patent/KR920007536B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

내용 없음No content

Description

반도체 웨이퍼의 제조방법Method of manufacturing a semiconductor wafer

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2도의 (A)는 본 발명의 (100)면을 자른 웨이퍼의 개략도, (B)는 (A)의 Q부분을 이용한 트렌치 패턴도면.2A is a schematic view of a wafer cut from the (100) plane of the present invention, and (B) is a trench pattern drawing using the Q portion of (A).

Claims (1)

트렌치 커패시터의 유전물질로 열산화막(H)을 사용할때(100) 실리콘 웨이퍼의 기준 평면영역(E)을 (100)에 형성하고 트렌치 커패시터의 모서리부분이(110)이 되게 형성하므로 유전체의 브레이크 다운 전압을 높일 수 있게한 반도체 웨이퍼의 제조방법.When the thermal oxide film (H) is used as the dielectric material of the trench capacitor (100), the reference plane region (E) of the silicon wafer is formed at (100), and the corner portion of the trench capacitor is formed to be (110), so that the breakdown of the dielectric A method of manufacturing a semiconductor wafer, which makes it possible to increase the voltage. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900003074A 1990-03-08 1990-03-08 A method of fabricating wafer KR920007536B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900003074A KR920007536B1 (en) 1990-03-08 1990-03-08 A method of fabricating wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900003074A KR920007536B1 (en) 1990-03-08 1990-03-08 A method of fabricating wafer

Publications (2)

Publication Number Publication Date
KR910017617A true KR910017617A (en) 1991-11-05
KR920007536B1 KR920007536B1 (en) 1992-09-05

Family

ID=19296780

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900003074A KR920007536B1 (en) 1990-03-08 1990-03-08 A method of fabricating wafer

Country Status (1)

Country Link
KR (1) KR920007536B1 (en)

Also Published As

Publication number Publication date
KR920007536B1 (en) 1992-09-05

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