KR920015633A - Manufacturing Method of Semiconductor Device - Google Patents

Manufacturing Method of Semiconductor Device Download PDF

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Publication number
KR920015633A
KR920015633A KR1019910000290A KR910000290A KR920015633A KR 920015633 A KR920015633 A KR 920015633A KR 1019910000290 A KR1019910000290 A KR 1019910000290A KR 910000290 A KR910000290 A KR 910000290A KR 920015633 A KR920015633 A KR 920015633A
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KR
South Korea
Prior art keywords
forming
concentration impurity
gate
manufacturing
semiconductor device
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Application number
KR1019910000290A
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Korean (ko)
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KR940000991B1 (en
Inventor
서재범
Original Assignee
문정환
금성일렉트론 주식회사
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910000290A priority Critical patent/KR940000991B1/en
Publication of KR920015633A publication Critical patent/KR920015633A/en
Application granted granted Critical
Publication of KR940000991B1 publication Critical patent/KR940000991B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음No content

Description

반도체장치의 제조방법Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2(a)~(d)는 본 발명의 1실시예에 따른 제조공정도이다.Second (a) to (d) is a manufacturing process chart according to an embodiment of the present invention.

Claims (1)

반도체 기판상의 소정부분에 펀치 드루우 방지를 위한 불순물을 이온주입하는 공정과, 전면에 에피택셜층을 성장시키는 공정과, 그위에 게이트 산화막을 성장시키고 게이트 형성 영역으로 제한된 게이트 폴리를 형성한 후 상기 게이트 폴리를 마스크로 사용하여 LDD 구조의 저농도 불순물을 주입하여 저농도 불순물층을 형성하는 공정과, 상기 게이트 폴리의 측면에 측벽을 형성한 후 LDD 구조의 고농도 불순물을 주입하여 고농도 불순물층을 형성하고 열처리하는 공정으로 이루어진 반도체 장치의 제조방법.Implanting impurities to prevent punch draw in a predetermined portion on the semiconductor substrate, growing an epitaxial layer on the entire surface thereof, growing a gate oxide film thereon, and forming a gate poly limited to the gate formation region. A process of forming a low concentration impurity layer by injecting a low concentration impurity of LDD structure using a gate poly as a mask, and forming a high concentration impurity layer by implanting a high concentration impurity of LDD structure after forming sidewalls on the side of the gate poly The manufacturing method of the semiconductor device which consists of a process to perform. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910000290A 1991-01-10 1991-01-10 Manufacturing method of semiconductor device KR940000991B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910000290A KR940000991B1 (en) 1991-01-10 1991-01-10 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910000290A KR940000991B1 (en) 1991-01-10 1991-01-10 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
KR920015633A true KR920015633A (en) 1992-08-27
KR940000991B1 KR940000991B1 (en) 1994-02-07

Family

ID=19309619

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910000290A KR940000991B1 (en) 1991-01-10 1991-01-10 Manufacturing method of semiconductor device

Country Status (1)

Country Link
KR (1) KR940000991B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970053015A (en) * 1995-12-07 1997-07-29 김주용 Transistor manufacturing method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970053015A (en) * 1995-12-07 1997-07-29 김주용 Transistor manufacturing method of semiconductor device

Also Published As

Publication number Publication date
KR940000991B1 (en) 1994-02-07

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