KR920020606A - Semiconductor device and manufacturing method - Google Patents

Semiconductor device and manufacturing method Download PDF

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Publication number
KR920020606A
KR920020606A KR1019910006088A KR910006088A KR920020606A KR 920020606 A KR920020606 A KR 920020606A KR 1019910006088 A KR1019910006088 A KR 1019910006088A KR 910006088 A KR910006088 A KR 910006088A KR 920020606 A KR920020606 A KR 920020606A
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KR
South Korea
Prior art keywords
epitaxial layer
forming
conductive type
oxide film
source region
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KR1019910006088A
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Korean (ko)
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KR940009364B1 (en
Inventor
이윤기
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문정환
금성일렉트론 주식회사
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Priority to KR1019910006088A priority Critical patent/KR940009364B1/en
Publication of KR920020606A publication Critical patent/KR920020606A/en
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Publication of KR940009364B1 publication Critical patent/KR940009364B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음No content

Description

반도체장치 및 그 제조방법Semiconductor device and manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도 (a)-(e)는 본 발명의 1실시예에 따른 제조공정도이다.2 (a)-(e) are manufacturing process diagrams according to one embodiment of the present invention.

Claims (2)

선택적 에피택셜층에는 드레인 영역을 형성하고, 상기 선택적 에피택셜층의 하부기판에 소오스 영역을 형성하며, 폴리실리콘을 이용하여 수직적인 구조를 게이트 및 상기 소오스 영역을 구성시킨 것을 특징으로 하는 반도체 장치.And a drain region formed on the selective epitaxial layer, a source region formed on the lower substrate of the selective epitaxial layer, and a gate and the source region having a vertical structure using polysilicon. 제1도전형의 기판상의 소정부분에 제1도전형과 반대도전형인 제2도전형의 웰을 형성하는 공정과, 전면에 산화막을 성장시키고 선택적 식각한 후 에피택셜층을 선택적으로 성장시키는 공정과, 상기 제2도전형의 웰상의 상기 에피택셜층에 제2도전형 불순물을 이온주입하는 공정과, 남아있는 상기 산화막을 제거하고 소정의 부분에 게이트 산화막을 형성시키는 공정과, 상기 에패택셜층 부분에는 드레인 영역을 형성하고 상기 에피택셜층의 하부기판부분에는 소오스 영역을 형성시키는 불순물 이온 주입 공정으로 이루어진 반도체 장치의 제조방법.Forming a well of a second conductive type opposite to the first conductive type on a predetermined portion of the substrate of the first conductive type; and selectively growing an epitaxial layer after growing and selectively etching an oxide film on the entire surface And ion implanting a second conductive impurity into the epitaxial layer on the well of the second conductive type, removing the remaining oxide film and forming a gate oxide film on a predetermined portion, and the epitaxial layer. The impurity ion implantation process of forming a drain region in the part and forming a source region in the lower substrate part of the epitaxial layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910006088A 1991-04-16 1991-04-16 Semiconductor device and manufacturing method thereof KR940009364B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910006088A KR940009364B1 (en) 1991-04-16 1991-04-16 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910006088A KR940009364B1 (en) 1991-04-16 1991-04-16 Semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
KR920020606A true KR920020606A (en) 1992-11-21
KR940009364B1 KR940009364B1 (en) 1994-10-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910006088A KR940009364B1 (en) 1991-04-16 1991-04-16 Semiconductor device and manufacturing method thereof

Country Status (1)

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KR (1) KR940009364B1 (en)

Also Published As

Publication number Publication date
KR940009364B1 (en) 1994-10-07

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