KR920022555A - Manufacturing Method of Semiconductor Device - Google Patents

Manufacturing Method of Semiconductor Device Download PDF

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Publication number
KR920022555A
KR920022555A KR1019910008136A KR910008136A KR920022555A KR 920022555 A KR920022555 A KR 920022555A KR 1019910008136 A KR1019910008136 A KR 1019910008136A KR 910008136 A KR910008136 A KR 910008136A KR 920022555 A KR920022555 A KR 920022555A
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KR
South Korea
Prior art keywords
manufacturing
semiconductor device
forming
layer
gate
Prior art date
Application number
KR1019910008136A
Other languages
Korean (ko)
Inventor
이내인
김일권
고종우
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910008136A priority Critical patent/KR920022555A/en
Publication of KR920022555A publication Critical patent/KR920022555A/en

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Abstract

내용 없음.No content.

Description

반도체 장치의 제조방법Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2(A)∼(D)도는 이 발명에 따른 반도체 장치의 제조공정도.2 (A) to (D) are manufacturing process diagrams of the semiconductor device according to the present invention.

제3도는 이 발명의 또다른 실시예의 일부공정도이다.3 is a partial process diagram of another embodiment of the present invention.

Claims (5)

반도체 장치의 제조방법에 있어서, 제1 도전형의 반도체기판에 게이트산화막 및 게이트를 형성하는 제1공정과, 상기 게이트의 측면에 스페이서를 형성하는 제2공정과, 상기 제1 도전형과 반대도전형인 제2 도전형의 불순물을 사용하여 소오스와 드레인을 형성하는 제3공정과, 상기 소오스, 드레인 및 게이트의 상부에 에피층을 형성하는 제4공정과, 상기 에피층을 실리사이드화하는 제5공정으로 이루어지는 반도체 장치의 제조방법.A method of manufacturing a semiconductor device, comprising: a first step of forming a gate oxide film and a gate on a first conductivity type semiconductor substrate, a second step of forming a spacer on a side of the gate, and a reverse view to the first conductivity type A third step of forming a source and a drain using a typical second conductivity type impurity, a fourth step of forming an epitaxial layer on top of the source, drain and gate, and a fifth step of silicideing the epitaxial layer The manufacturing method of the semiconductor device which consists of a process. 제1항에 있어서, 상기 에피층을 선택적 에피택셜 성장법으로 형성하는 반도체 장치의 제조방법.The method of claim 1, wherein the epitaxial layer is formed by a selective epitaxial growth method. 제1항에 있어서, 제5공정은, 상기 스페이서 및 에피층에 고융점 금속층을 침적하여 실리사이드하는 반도체 장치의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein in the fifth step, a high melting point metal layer is deposited and silicided on the spacer and the epi layer. 제3항에 있어서, 상기 고융점 금속층중 에피층과 반응하지 않는 것을 제거하는 반도체 장치의 제조방법.The method of manufacturing a semiconductor device according to claim 3, wherein the high melting point metal layer does not react with the epi layer. 제1항에 있어서, 상기 스페이서 및 에피층에 고융점 금속을 이온주입하여 실리사이드화하는 반도체 장치의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein a high melting point metal is ion implanted into the spacer and the epi layer to silicide. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910008136A 1991-05-20 1991-05-20 Manufacturing Method of Semiconductor Device KR920022555A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910008136A KR920022555A (en) 1991-05-20 1991-05-20 Manufacturing Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910008136A KR920022555A (en) 1991-05-20 1991-05-20 Manufacturing Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR920022555A true KR920022555A (en) 1992-12-19

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ID=67433154

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910008136A KR920022555A (en) 1991-05-20 1991-05-20 Manufacturing Method of Semiconductor Device

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KR (1) KR920022555A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100464386B1 (en) * 1997-06-11 2005-02-28 삼성전자주식회사 Manufacturing method of transistor in semiconductor device
KR100937649B1 (en) * 2002-12-30 2010-01-19 동부일렉트로닉스 주식회사 Method for forming transistor of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100464386B1 (en) * 1997-06-11 2005-02-28 삼성전자주식회사 Manufacturing method of transistor in semiconductor device
KR100937649B1 (en) * 2002-12-30 2010-01-19 동부일렉트로닉스 주식회사 Method for forming transistor of semiconductor device

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