KR920017215A - SOI manufacturing method using silicon growth - Google Patents
SOI manufacturing method using silicon growth Download PDFInfo
- Publication number
- KR920017215A KR920017215A KR1019910002366A KR910002366A KR920017215A KR 920017215 A KR920017215 A KR 920017215A KR 1019910002366 A KR1019910002366 A KR 1019910002366A KR 910002366 A KR910002366 A KR 910002366A KR 920017215 A KR920017215 A KR 920017215A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- silicon growth
- oxide film
- soi manufacturing
- growing
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 5
- 229910052710 silicon Inorganic materials 0.000 title claims description 5
- 239000010703 silicon Substances 0.000 title claims description 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000002500 ions Chemical class 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/4763—Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제3도는 본 발명의 실리콘 성장을 이용한 SOI의 구성도.3 is a schematic diagram of SOI utilizing silicon growth of the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910002366A KR0172814B1 (en) | 1991-02-12 | 1991-02-12 | Method of fabricating soi using silicon growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910002366A KR0172814B1 (en) | 1991-02-12 | 1991-02-12 | Method of fabricating soi using silicon growth |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920017215A true KR920017215A (en) | 1992-09-26 |
KR0172814B1 KR0172814B1 (en) | 1999-03-30 |
Family
ID=19311050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910002366A KR0172814B1 (en) | 1991-02-12 | 1991-02-12 | Method of fabricating soi using silicon growth |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0172814B1 (en) |
-
1991
- 1991-02-12 KR KR1019910002366A patent/KR0172814B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR0172814B1 (en) | 1999-03-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20090921 Year of fee payment: 12 |
|
LAPS | Lapse due to unpaid annual fee |