KR920017251A - Method of manufacturing diode coupled SRAM cell - Google Patents

Method of manufacturing diode coupled SRAM cell Download PDF

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Publication number
KR920017251A
KR920017251A KR1019910002365A KR910002365A KR920017251A KR 920017251 A KR920017251 A KR 920017251A KR 1019910002365 A KR1019910002365 A KR 1019910002365A KR 910002365 A KR910002365 A KR 910002365A KR 920017251 A KR920017251 A KR 920017251A
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KR
South Korea
Prior art keywords
forming
sram cell
photoresist
oxide film
diode coupled
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Application number
KR1019910002365A
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Korean (ko)
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KR0147386B1 (en
Inventor
이용훈
Original Assignee
문정환
금성일렉트론 주식회사
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Priority to KR1019910002365A priority Critical patent/KR0147386B1/en
Publication of KR920017251A publication Critical patent/KR920017251A/en
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Publication of KR0147386B1 publication Critical patent/KR0147386B1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

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  • Semiconductor Memories (AREA)

Abstract

내용 없음No content

Description

다이오드 결합형 에스램 셀의 제조방법Method of manufacturing diode coupled SRAM cell

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명의 다이오드 결합형 에스램 셀 회로도, 제4도는 제3도에 있어서 다이오드 결합형 에스램 셀의 프로세스 공정도.FIG. 3 is a circuit diagram of a diode coupled SRAM cell of the present invention, and FIG. 4 is a process flow diagram of a diode coupled SRAM cell in FIG.

Claims (1)

실리콘기판위에 포토레지스트를 이용하여 선택적 산화에 의해 산화막을 형성하는 단계와, 채널이온주입후 포토레지스트를 이용하여 상기 산화막을 선택 에칭하고 드레인을 형성하는 단계와, 상기 산화막 위에 폴리실리콘게이트를 증착하고 산화막을 형성한 후 포토레지스터를 제거하여 실리콘 에피택셜을 형성하는 단계와, 상기 에피층에 이온을 주입하여 소오스영역을 형성하고 바이폴라 트랜지스터와 다이오드를 형성한 후 산화막을 형성하는 단계와, 상기 산화막의 콘택홈을 뚫어 알루미늄 금속을 증착시키는 단계를 포함하여 이루어진 것을 특징으로 하는 다이오드 결합형 에스램 셀 제조방법.Forming an oxide film by selective oxidation using a photoresist on a silicon substrate, selectively etching the oxide film using a photoresist after channel ion implantation, and forming a drain, and depositing a polysilicon gate on the oxide film Forming an epitaxial layer and then removing the photoresist to form silicon epitaxial, implanting ions into the epitaxial layer to form a source region, forming a bipolar transistor and a diode, and then forming an oxide layer; A method of fabricating a diode-coupled SRAM cell comprising the step of depositing an aluminum metal through a contact groove. ※참고사항:최초출원 내용에 의하여 공개하는 것임.※ Note: This is to be disclosed based on the first application.
KR1019910002365A 1991-02-12 1991-02-12 Method of making a sram cell having diodes KR0147386B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910002365A KR0147386B1 (en) 1991-02-12 1991-02-12 Method of making a sram cell having diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910002365A KR0147386B1 (en) 1991-02-12 1991-02-12 Method of making a sram cell having diodes

Publications (2)

Publication Number Publication Date
KR920017251A true KR920017251A (en) 1992-09-26
KR0147386B1 KR0147386B1 (en) 1998-08-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910002365A KR0147386B1 (en) 1991-02-12 1991-02-12 Method of making a sram cell having diodes

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KR (1) KR0147386B1 (en)

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Publication number Publication date
KR0147386B1 (en) 1998-08-01

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