KR920017181A - LOCOS process method using oxygen ion implantation - Google Patents

LOCOS process method using oxygen ion implantation Download PDF

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Publication number
KR920017181A
KR920017181A KR1019910002466A KR910002466A KR920017181A KR 920017181 A KR920017181 A KR 920017181A KR 1019910002466 A KR1019910002466 A KR 1019910002466A KR 910002466 A KR910002466 A KR 910002466A KR 920017181 A KR920017181 A KR 920017181A
Authority
KR
South Korea
Prior art keywords
ion implantation
oxygen ion
process method
nitride
locos process
Prior art date
Application number
KR1019910002466A
Other languages
Korean (ko)
Inventor
장성진
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910002466A priority Critical patent/KR920017181A/en
Publication of KR920017181A publication Critical patent/KR920017181A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

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  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

내용 없음No content

Description

산소이온 주입을 이용한 LOCOS 공정방법LOCOS process method using oxygen ion implantation

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 산소이온주입에 의한 LOCOS 공정도.2 is a LOCOS process diagram by the oxygen ion implantation of the present invention.

Claims (1)

실리콘 기판위에 얇은 산화막과 질화물을 형성한 후 마스크에 의해 산화시킬 부분의 질화물을 선택에칭하는 단계와, 선택에칭된 질화물의 양측벽에 질화물을 형성한후 산소이온주입을 실시하여 실리콘 기판으로 산소이온을 확산시키는 단계와, 실리콘 기판에 확신된 산소이온을 산화시켜 질화물을 제거하는 단계를 포함하여 구성된 것을 특징으로 산소이온주입을 이용한 LOCOS공정방법.Forming a thin oxide film and nitride on the silicon substrate, and selectively etching the nitride of the portion to be oxidized by the mask, forming nitride on both sidewalls of the selectively etched nitride, and then injecting oxygen ions to the silicon substrate. Diffusing and oxidizing the oxygen ions to the silicon substrate to remove the nitrides. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910002466A 1991-02-13 1991-02-13 LOCOS process method using oxygen ion implantation KR920017181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910002466A KR920017181A (en) 1991-02-13 1991-02-13 LOCOS process method using oxygen ion implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910002466A KR920017181A (en) 1991-02-13 1991-02-13 LOCOS process method using oxygen ion implantation

Publications (1)

Publication Number Publication Date
KR920017181A true KR920017181A (en) 1992-09-26

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ID=67396654

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910002466A KR920017181A (en) 1991-02-13 1991-02-13 LOCOS process method using oxygen ion implantation

Country Status (1)

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KR (1) KR920017181A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4300978A1 (en) * 1992-01-21 1993-07-22 Kyung Park Combined grinder and polisher for glass plates - has separate tanks for grinding fluid and polishing fluid and automatic control for recycling of fluids

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4300978A1 (en) * 1992-01-21 1993-07-22 Kyung Park Combined grinder and polisher for glass plates - has separate tanks for grinding fluid and polishing fluid and automatic control for recycling of fluids

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E902 Notification of reason for refusal
E601 Decision to refuse application