KR910017682A - Trench manufacturing method - Google Patents

Trench manufacturing method Download PDF

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Publication number
KR910017682A
KR910017682A KR1019900003155A KR900003155A KR910017682A KR 910017682 A KR910017682 A KR 910017682A KR 1019900003155 A KR1019900003155 A KR 1019900003155A KR 900003155 A KR900003155 A KR 900003155A KR 910017682 A KR910017682 A KR 910017682A
Authority
KR
South Korea
Prior art keywords
manufacturing
trench
trench manufacturing
film
oxide
Prior art date
Application number
KR1019900003155A
Other languages
Korean (ko)
Other versions
KR0161845B1 (en
Inventor
정병태
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019900003155A priority Critical patent/KR0161845B1/en
Publication of KR910017682A publication Critical patent/KR910017682A/en
Application granted granted Critical
Publication of KR0161845B1 publication Critical patent/KR0161845B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier

Abstract

내용 없음No content

Description

트랜치 제조방법Trench manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2도는 본 발명에 따른 트랜치 제조공정도.2 is a trench manufacturing process according to the present invention.

Claims (1)

트랜지차 형성될 부분에 산소를 이온주입한 후 감광막(2) 및 질화막(3)을 벗기소 산화로에 넣어 열처리하여 산화막을 형성한 뒤 실리콘웨이퍼에 불산을 주입하여 습식 식각에 의해 식각하여 트랜치를 제조하는 것을 특징으로 하는 트랜지 제조방법.After ion implantation of oxygen into the portion to be formed in the trench, the photoresist film 2 and the nitride film 3 are placed in a stripping oxide furnace, followed by heat treatment to form an oxide film. Then, hydrofluoric acid is injected into the silicon wafer to be etched by wet etching. Transistor manufacturing method characterized in that the manufacturing. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900003155A 1990-03-09 1990-03-09 Method of making a trench KR0161845B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900003155A KR0161845B1 (en) 1990-03-09 1990-03-09 Method of making a trench

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900003155A KR0161845B1 (en) 1990-03-09 1990-03-09 Method of making a trench

Publications (2)

Publication Number Publication Date
KR910017682A true KR910017682A (en) 1991-11-05
KR0161845B1 KR0161845B1 (en) 1998-12-01

Family

ID=19296829

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900003155A KR0161845B1 (en) 1990-03-09 1990-03-09 Method of making a trench

Country Status (1)

Country Link
KR (1) KR0161845B1 (en)

Also Published As

Publication number Publication date
KR0161845B1 (en) 1998-12-01

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