KR920003548A - Gate Formation Method of Multi-layered Devices - Google Patents

Gate Formation Method of Multi-layered Devices Download PDF

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Publication number
KR920003548A
KR920003548A KR1019900010678A KR900010678A KR920003548A KR 920003548 A KR920003548 A KR 920003548A KR 1019900010678 A KR1019900010678 A KR 1019900010678A KR 900010678 A KR900010678 A KR 900010678A KR 920003548 A KR920003548 A KR 920003548A
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South Korea
Prior art keywords
gate
forming
formation method
gate formation
layered devices
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KR1019900010678A
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Korean (ko)
Inventor
한향탁
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문정환
금성일렉트론 주식회사
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Priority to KR1019900010678A priority Critical patent/KR920003548A/en
Publication of KR920003548A publication Critical patent/KR920003548A/en

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Abstract

내용 없음No content

Description

다층구조소자의 게이트 형성방식Gate Formation Method of Multi-layered Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제4도는 (가) 및(나)는 본 발명에 따른 실리콘 제어 정류기의 구조도.4 is a structural diagram of a silicon controlled rectifier according to the present invention.

제5도는 제4도에 따른 회로도.5 is a circuit diagram according to FIG.

Claims (2)

다층구조(P1N1P2N2)를 갖는 실리콘 제어 정류기 소자의 게이트 형성방식에 있어서, 트랜지스터를 형성하는 상기 다층(N1P2N2)의 일측면에 게이트절연막(1) 및 게이트 금속(2)을 순차적으로 형성시켜 모스케이트를 형성하도록 하는 것을 특징으로 하는 다층구조소자의 게이트 형성방식In the gate formation method of a silicon controlled rectifier element having a multilayer structure (P1N1P2N2), a gate insulating film (1) and a gate metal (2) are sequentially formed on one side of the multilayer (N1P2N2) forming a transistor to form a mosque. Gate forming method of a multi-layered device, characterized in that to form 제1항에 있어서, 트랜지스터를 형성하는 다층(P1N1P2)의 일측면에 모스게이트를 형성하여 게이트를 다단으로 형성시키는 것을 특징으로 하는 다층구조소자의 게이트 형성방식The gate forming method of claim 1, wherein the gate is formed in multiple stages by forming a MOS gate on one side of the multilayer P1N1P2 forming the transistor. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019900010678A 1990-07-13 1990-07-13 Gate Formation Method of Multi-layered Devices KR920003548A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900010678A KR920003548A (en) 1990-07-13 1990-07-13 Gate Formation Method of Multi-layered Devices

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Application Number Priority Date Filing Date Title
KR1019900010678A KR920003548A (en) 1990-07-13 1990-07-13 Gate Formation Method of Multi-layered Devices

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KR920003548A true KR920003548A (en) 1992-02-29

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KR1019900010678A KR920003548A (en) 1990-07-13 1990-07-13 Gate Formation Method of Multi-layered Devices

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100412368B1 (en) * 2000-11-17 2003-12-31 현대자동차주식회사 T.G.S lever assembly

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100412368B1 (en) * 2000-11-17 2003-12-31 현대자동차주식회사 T.G.S lever assembly

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