KR950019934A - How to remove polymer and reduce step after metal etching - Google Patents

How to remove polymer and reduce step after metal etching Download PDF

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Publication number
KR950019934A
KR950019934A KR1019930031859A KR930031859A KR950019934A KR 950019934 A KR950019934 A KR 950019934A KR 1019930031859 A KR1019930031859 A KR 1019930031859A KR 930031859 A KR930031859 A KR 930031859A KR 950019934 A KR950019934 A KR 950019934A
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KR
South Korea
Prior art keywords
metal
silicon nitride
oxide film
etching
low temperature
Prior art date
Application number
KR1019930031859A
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Korean (ko)
Inventor
정진기
설여송
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930031859A priority Critical patent/KR950019934A/en
Publication of KR950019934A publication Critical patent/KR950019934A/en

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  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

본 발명은 반도체 소자제조 공정중, 하드 마스크(Hard mask)를 사용하여 메탈(Metal)식각시 발생하는 폴리머(Polymer)를 제거하고 단차를 줄이는 방법에 관한 것으로, 특히, 하드 마스크를 사용하고 단층 감광막 패턴을 형성하는 SLR(Single Layer Resist)공정으로 미세한 메탈 라인 식각시 발생하는 폴리머를 제거하고, 단차를 줄여 포토공정을 용이하게 하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of removing polymers and reducing steps generated during metal etching using a hard mask during a semiconductor device manufacturing process. The SLR (Single Layer Resist) process to form a pattern to remove the polymer generated during fine metal line etching, and to reduce the step to facilitate a photo process.

Description

메탈(Metal)식각후의 폴리머 제거 및 단차를 줄이는 방법How to remove polymer and reduce step after metal etching

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 내지 제C도는 종래의 메탈 식각공정을 도시한 단면도,1A to C are cross-sectional views showing a conventional metal etching process,

제2A도 내지 제D도는 본 발명에 따라 메탈 식각공정의 단계를 도시한 단면도.2A through D are cross-sectional views illustrating the steps of a metal etching process according to the present invention.

Claims (2)

식각하고자 하는 금속층 상부에 저온 실리콘 질화막을 형성하는 단계와,전체 구조 상부에 저온에서 형성 가능하고, 플오루 성질을 가지는 산화막을 도포하는 단계와, 상기 산화막 상부에 단층 감광막패턴을 형성하는 단계와, 감광막 패턴을 이용하여 전온 산화막과 실리콘 질화막을 건식식각한 후, 감광막을 제거하는단계와, 상기 실리콘 질화막을 식각 방지층으로 하여 저온 산화막을 제거하는 단계와, 시리콘 질화막을 식각 장벽으로 하여 하부의 금속층을 식각하는 단계를 포함하는 것을 특징으로 하는 메탈(Metal)식각후의 폴리머 제거 및 단차를 줄이는 방법.Forming a low temperature silicon nitride film on the metal layer to be etched, applying an oxide film that can be formed at a low temperature on the entire structure and having a flue property, and forming a single layer photoresist pattern on the oxide film; Dry etching the ion oxide film and the silicon nitride film using the photoresist pattern, and then removing the photoresist film, removing the low temperature oxide film using the silicon nitride film as an etch stop layer, and using the silicon nitride film as an etch barrier. Method of reducing the polymer removal and step after the metal (Metal) etching comprising the step of etching. 제1항에 있어서, 상기 저온 산화막과 실리콘 질화막을 식각한 후, 금속이 스터퍼 되어 발생되는 폴리머를 제거하기 위해, 불소가 함유된 화학용액으로 세정하는 것을 특징으로 하는 메탈 식각후의 폴리머 제거 및 단차를 줄이는 방법.The method of claim 1, wherein the low temperature oxide film and the silicon nitride film are etched, and then the metal is removed by a fluorine-containing chemical solution to remove the polymer produced by the stuffing of the metal. How to reduce it. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930031859A 1993-12-31 1993-12-31 How to remove polymer and reduce step after metal etching KR950019934A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930031859A KR950019934A (en) 1993-12-31 1993-12-31 How to remove polymer and reduce step after metal etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930031859A KR950019934A (en) 1993-12-31 1993-12-31 How to remove polymer and reduce step after metal etching

Publications (1)

Publication Number Publication Date
KR950019934A true KR950019934A (en) 1995-07-24

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KR1019930031859A KR950019934A (en) 1993-12-31 1993-12-31 How to remove polymer and reduce step after metal etching

Country Status (1)

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KR (1) KR950019934A (en)

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