KR100417646B1 - Method for cleaning interlayer dielectric of semiconductor device - Google Patents

Method for cleaning interlayer dielectric of semiconductor device Download PDF

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KR100417646B1
KR100417646B1 KR1019960075176A KR19960075176A KR100417646B1 KR 100417646 B1 KR100417646 B1 KR 100417646B1 KR 1019960075176 A KR1019960075176 A KR 1019960075176A KR 19960075176 A KR19960075176 A KR 19960075176A KR 100417646 B1 KR100417646 B1 KR 100417646B1
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cleaning
insulating film
interlayer insulating
interlayer dielectric
semiconductor device
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KR1019960075176A
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Korean (ko)
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KR19980055939A (en
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이성희
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주식회사 하이닉스반도체
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers

Abstract

PURPOSE: A method for cleaning an interlayer dielectric of a semiconductor device is provided to improve yield by forming an interlayer dielectric on a silicon substrate having undergone a predetermined fabricating process and by performing a sulphuric acid cleaning process and an ammonia cleaning process on the interlayer dielectric to remove particles. CONSTITUTION: A sulphuric acid cleaning process is performed on an interlayer dielectric formed on a silicon substrate(1) to eliminate an organic material remaining on the interlayer dielectric. A hot QDR(quick dump rinse) cleaning process is performed on the interlayer dielectric. An ammonia cleaning process is performed on the interlayer dielectric to eliminate an inorganic material and metallic ions remaining on the interlayer dielectric. A cold QDR cleaning process is performed on the interlayer dielectric. A final cleaning process is performed by using deionized water.

Description

반도체 소자의 층간 절연막 세정방법Interlayer insulating film cleaning method of semiconductor device

본 발명은 소정의 제조공정을 마친 실리콘기판상에 층간 절연막을 형성한 후 이 층간 절연막의 표면특성을 개선하기 위한 반도체 소자의 층간 절연막 세정방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning an interlayer insulating film of a semiconductor device for forming an interlayer insulating film on a silicon substrate which has been subjected to a predetermined manufacturing process and then improving the surface characteristics of the interlayer insulating film.

일반적으로 반도체 소자의 제조공정중 폴리실리콘층간 또는 접합영역 및 폴리실리콘층간 절연을 위하여 다층의 층간 절연막을 형성하게 된다. 이중 BPSG막은 증착시에 붕소(B)나 인(P)을 함유하는 반응물을 첨가하여 증착된 SiO2-B2O3-P2O5혼합 산화막으로서 금속배선 이전의 배선 층간 절연막으로 사용된다.In general, a multilayer interlayer insulating film is formed to insulate between polysilicon layers or junction regions and polysilicon layers during a semiconductor device manufacturing process. The double BPSG film is a SiO 2 -B 2 O 3 -P 2 O 5 mixed oxide film deposited by adding a reactant containing boron (B) or phosphorus (P) during deposition, and is used as an interlayer insulating film before metal wiring.

종래에는 층간 절연막으로 BPSG막을 형성한 후 이 BPSG막의 표면을 황산세정(Sulfuric Peroxide Mix : SPM) 방법으로 세정하였다. 황산세정은 BPSG막의 표면에 잔류하는 유기물 제거에는 효과가 있으나 그 외의 불순물인 무기물 및 금속성 이온의 제거는 하지 못했다. 그리고, 황산세정시 황산(H2SO4)은 +전위를 가지고 있고, BPSG막의 표면은 -전위를 가지므로 파티클(Particle)이 BPSG막의 표면에 달라붙으므로 인하여 소자의 특성을 저하시키는 문제가 있다.Conventionally, after forming a BPSG film with an interlayer insulating film, the surface of the BPSG film was cleaned by a Sulfuric Peroxide Mix (SPM) method. Sulfuric acid cleaning is effective in removing organic substances remaining on the surface of the BPSG film, but not in removing other impurities such as inorganic and metallic ions. In addition, since sulfuric acid (H 2 SO 4 ) has a + potential and the surface of the BPSG film has a-potential when washing sulfuric acid, there is a problem of degrading the characteristics of the device due to the particles (particles) sticking to the surface of the BPSG film. .

따라서 본 발명은 소정의 제조공정을 마친 실리콘기판상에 층간 절연막을 형성한 후 이 층간 절연막의 표면특성을 양호하게 하기 위하여 황산세정 및 암모니아 세정을 실시하는 반도체 소자의 층간 절연막 세정방법을 제공하는 것을 그 목적으로 한다.Accordingly, the present invention provides a method for cleaning an interlayer insulating film of a semiconductor device in which sulfuric acid cleaning and ammonia cleaning are performed in order to improve the surface characteristics of the interlayer insulating film after forming the interlayer insulating film on the silicon substrate after a predetermined manufacturing process. For that purpose.

상술한 목적을 실현하기 위한 본 발명에 따른 반도체 소자의 층간 절연막 세정방법은 소정의 제조공정으로 실리콘기판상에 형성된 층간 절연막상에 황산 : 과산화수소의 혼합비율이 3 내지 5 : 1인 용액을 사용한 황산세정을 실시하여 층간 절연막상에 잔류하는 유기물을 제거하는 단계와, 상기 단계로부터 층간 절연막 상에 50 내지 70℃의 온도조건에서 핫 QDR 세정을 실시하는 단계와, 상기 단계로부터 층간 절연막 상에 수산화 암모늄 과산화 수소 : 순수의 혼합비율이 1 : 4 : 15 내지 25인 용액을 사용한 암모니아 세정을 100 내지 600초간 실시하여 층간 절연막상에 잔류하는 무기물 및 금속성 이온을 제거하는 단계와, 상기 단계로부터 층간 절연막 상에 20 내지 25℃의 온도조건에서 콜드 QDR 세정을 실시하는 단계와, 상기 단계로부터 순수를 사용한 최종 세정을 실시하는 단계로 이루어진다.Method for cleaning the interlayer insulating film of a semiconductor device according to the present invention for achieving the above object is sulfuric acid using a solution of the mixture ratio of sulfuric acid: hydrogen peroxide of 3 to 5: 1 on the interlayer insulating film formed on the silicon substrate by a predetermined manufacturing process Performing cleaning to remove organic residue remaining on the interlayer insulating film, performing hot QDR cleaning on the interlayer insulating film at a temperature condition of 50 to 70 ° C from the step, and ammonium hydroxide on the interlayer insulating film from the step Ammonia cleaning using a solution having a hydrogen peroxide: pure water mixing ratio of 1: 4: 15 to 25 was performed for 100 to 600 seconds to remove inorganic and metallic ions remaining on the interlayer insulating film, and from the step Performing cold QDR cleaning at a temperature of 20-25 ° C. A step of conducting.

도 1A 및 1B는 본 발명에 따른 반도체 소자의 층간 절연막 세정방법을 설명하기 위한 소자의 단면도.1A and 1B are cross-sectional views of a device for explaining a method for cleaning an interlayer insulating film of a semiconductor device according to the present invention.

<도면의 주요부분에 대한 기호설명><Description of Symbols on Main Parts of Drawing>

1 : 실리콘기판 2 : 접합영역1: silicon substrate 2: junction area

3 : 제 1 층간 절연막 4 : 제 2 층간 절연막3: first interlayer insulating film 4: second interlayer insulating film

A : 파티클(유기물, 무기물 및 금속성 이온)A: Particles (organic, inorganic and metallic ions)

이하, 본 발명에 따른 층간 절연막 세정방법을 첨부한 도면을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, a method of cleaning the interlayer insulating film according to the present invention will be described in detail with reference to the accompanying drawings.

도 1A 및 1B는 층간 절연막 세정방법을 설명하기 위한 소자의 단면도로서, 도 1A는 접합영역(2)이 형성된 실리콘기판(1)상에 제 1 층간 절연막(3) 및 제 2 층간 절연막(4)을 순차적으로 형성한 상태를 도시한다. 이때, 제 2 층간 절연막(4)상에는 화살표 A로 도시된 바와같은 파티클(유기물,무기물 및 금속성 이온)이 잔류한다. 제 2 층간 절연막(4)은 BPSG로 이루어진다.1A and 1B are cross-sectional views of a device for explaining an interlayer insulating film cleaning method, and FIG. 1A is a first interlayer insulating film 3 and a second interlayer insulating film 4 on a silicon substrate 1 on which a junction region 2 is formed. Shows a state of sequentially forming. At this time, particles (organic, inorganic and metallic ions) as shown by arrow A remain on the second interlayer insulating film 4. The second interlayer insulating film 4 is made of BPSG.

도 1B는 제 2 층간 절연막(4)상에 세정공정을 실시하여 제 2 층간 절연막(4)상에 잔류하는 파티클(A)을 제거한 상태를 도시한다. 세정공정은 먼저 황산세정을 실시하여 제 2 층간 절연막(4)상에 잔류하는 유기물을 제거한다. 황산세정은 황산 : 과산화수소의 혼합비율이 3 내지 5 : 1인 용액을 사용하여 실시된다. 다음으로 핫(Hot) QDR(Quick Dump Rinse) 세정을 실시한 후 암모니아 세정을 실시하여 제 2 층간 절연막(4)을 미세하게 식각하여 잔류하는 무기물 및 금속성 이온을 제거한다. 핫 QDR 세정은 50 내지 70℃의 온도조건에서 실시되며 암모니아 세정은 수산화 암모늄 : 과산화 수소 : 순수의 혼합비율이 1 : 4 : 15 내지 25인 용액을 사용하여 100 내지 600초간 실시하는게 적당하며 생산량(Through Put)을 감안하여 유동적으로 적용 가능하다. 다음으로 콜드(Cold) QDR 세정을 실시한 후 순수를 사용한 최종 세정을 실시하고, 마지막으로 아이소 프로필 알코올(IPA)을 이용한 증기건조를 실시한다. 콜드 QDR 세정은 20 내지 25℃의 온도조건에서 실시된다. 본 실시예에서는 절연막 및 폴리실리콘층간의 절연특성을 양호하게 하기 위한 세정 공정을 실시하였으나 본 발명은 이것에 한정되는 것은 아니다. 즉, 층간 절연막 간의 청정도를 좋게하기 위하여 실시할수 있음은 물론이다.FIG. 1B shows a state in which particles A remaining on the second interlayer insulating film 4 are removed by performing a cleaning process on the second interlayer insulating film 4. In the cleaning process, sulfuric acid is washed first to remove organic substances remaining on the second interlayer insulating film 4. Sulfuric acid washing is performed using a solution having a mixing ratio of sulfuric acid: hydrogen peroxide of 3 to 5: 1. Next, after performing Hot QDR (Quick Dump Rinse) cleaning, ammonia cleaning is performed to finely etch the second interlayer insulating film 4 to remove residual inorganic materials and metallic ions. The hot QDR cleaning is carried out at a temperature of 50 to 70 ° C. and the ammonia cleaning is preferably performed for 100 to 600 seconds using a solution having a mixing ratio of 1: 4: 15 to 25 of ammonium hydroxide: hydrogen peroxide: pure water. Through Put) can be applied flexibly. Next, cold QDR cleaning is performed, followed by final cleaning using pure water, and finally steam drying using isopropyl alcohol (IPA). Cold QDR cleaning is performed at a temperature of 20-25 ° C. In this embodiment, the cleaning process for improving the insulating properties between the insulating film and the polysilicon layer is performed, but the present invention is not limited thereto. That is, of course, it can be implemented to improve the cleanliness between the interlayer insulating film.

상술한 바와같이 본 발명에 의하면 소정의 제조공정을 마친 실리콘기판상에 층간 절연막을 형성한 후 이 층간 절연막상에 황산세정 및 암모니아세정을 실시하여 파티클을 제거하므로써 소자의 수율을 향상시킬 수 있는 탁월한 효과가 있다.As described above, according to the present invention, an interlayer insulating film is formed on a silicon substrate that has been subjected to a predetermined manufacturing process, and then sulfuric acid and ammonia cleaning are performed on the interlayer insulating film to remove particles, thereby improving the yield of the device. It works.

Claims (5)

반도체 소자의 층간 절연막 세정방법에 있어서,In the interlayer insulating film cleaning method of a semiconductor device, 소정의 제조공정으로 실리콘기판상에 형성된 층간 절연막상에 황산세정을 실시하여 상기 층간 절연막상에 잔류하는 유기물을 제거하는 단계와,Removing organic matter remaining on the interlayer insulating film by performing sulfuric acid cleaning on the interlayer insulating film formed on the silicon substrate by a predetermined manufacturing process; 상기 단계로부터 상기 층간 절연막 상에 핫 QDR 세정을 실시하는 단계와, 상기 단계로부터 상기 층간 절연막 상에 암모니아 세정을 실시하여 상기 층간 절연막 상에 잔류하는 무기물 및 금속성 이온을 제거하는 단계와,Performing hot QDR cleaning on the interlayer insulating film from the step, removing ammonia and metallic ions remaining on the interlayer insulating film by performing ammonia cleaning on the interlayer insulating film from the step; 상기 단계로부터 상기 층간 절연막 상에 콜드 QDR 세정을 실시하는 단계와,Performing cold QDR cleaning on the interlayer insulating film from the step; 상기 단계로부터 순수를 사용한 최종 세정을 실시하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 층간 절연막 세정방법.A method of cleaning an interlayer insulating film of a semiconductor device, characterized in that the step of performing a final cleaning using pure water from the step. 제 1 항에 있어서,The method of claim 1, 상기 층간 절연막은 BPSG로 이루어지는 것을 특징으로 하는 반도체 소자의 층간 절연막 세정방법.And the interlayer insulating film is made of BPSG. 제 1 항에 있어서,The method of claim 1, 상기 황산세정은 황산 : 과산화수소의 혼합비율이 3 내지 5 : 1인 용액을 사용하여 실시되는 것을 특징으로 하는 반도체 소자의 층간 절연막 세정방법.The sulfuric acid cleaning is performed by using a solution having a mixing ratio of sulfuric acid: hydrogen peroxide of 3 to 5: 1. 제 1 항에 있어서,The method of claim 1, 상기 핫 QDR 세정은 50 내지 70℃의 온도조건에서 실시되며 콜드 QDR 세정은 20 내지 25℃의 온도조건에서 실시되는 것을 특징으로 하는 반도체 소자의 층간 절연막 세정방법.The hot QDR cleaning is carried out at a temperature condition of 50 to 70 ℃ and cold QDR cleaning is carried out at a temperature condition of 20 to 25 ℃ the interlayer insulating film cleaning method of a semiconductor device. 제 1 항에 있어서,The method of claim 1, 상기 암모니아 세정은 수산화 암모늄 : 과산화 수소 : 순수의 혼합비율이 1 : 4 : 15 내지 25인 용액을 사용하여 100 내지 600초간 실시되는 것을 특징으로 하는 반도체 소자의 층간 절연막 세정방법.The ammonia cleaning is a method for cleaning an interlayer insulating film of a semiconductor device, characterized in that the solution is carried out for 100 to 600 seconds using a solution having a mixing ratio of ammonium hydroxide: hydrogen peroxide: pure water 1: 4: 15 to 25.
KR1019960075176A 1996-12-28 1996-12-28 Method for cleaning interlayer dielectric of semiconductor device KR100417646B1 (en)

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* Cited by examiner, † Cited by third party
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KR940016540A (en) * 1992-12-30 1994-07-23 김주용 Cleaning Method of Semiconductor Devices
US5498578A (en) * 1994-05-02 1996-03-12 Motorola, Inc. Method for selectively forming semiconductor regions
KR960019551A (en) * 1994-11-01 1996-06-17 김주용 Wafer cleaning method
KR960039212A (en) * 1995-04-04 1996-11-21 김주용 Gate oxide film formation method of semiconductor device
KR0127690B1 (en) * 1994-03-18 1998-04-03 김주용 Cleaning method of trench in the semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940016540A (en) * 1992-12-30 1994-07-23 김주용 Cleaning Method of Semiconductor Devices
KR0127690B1 (en) * 1994-03-18 1998-04-03 김주용 Cleaning method of trench in the semiconductor device
US5498578A (en) * 1994-05-02 1996-03-12 Motorola, Inc. Method for selectively forming semiconductor regions
KR960019551A (en) * 1994-11-01 1996-06-17 김주용 Wafer cleaning method
KR960039212A (en) * 1995-04-04 1996-11-21 김주용 Gate oxide film formation method of semiconductor device

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