KR980005901A - Method for Cleaning Polysilicon Film of Semiconductor Device - Google Patents

Method for Cleaning Polysilicon Film of Semiconductor Device Download PDF

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Publication number
KR980005901A
KR980005901A KR1019960023659A KR19960023659A KR980005901A KR 980005901 A KR980005901 A KR 980005901A KR 1019960023659 A KR1019960023659 A KR 1019960023659A KR 19960023659 A KR19960023659 A KR 19960023659A KR 980005901 A KR980005901 A KR 980005901A
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KR
South Korea
Prior art keywords
polysilicon film
semiconductor device
cleaning
solution
buried polysilicon
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Application number
KR1019960023659A
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Korean (ko)
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KR100196508B1 (en
Inventor
기영종
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960023659A priority Critical patent/KR100196508B1/en
Publication of KR980005901A publication Critical patent/KR980005901A/en
Application granted granted Critical
Publication of KR100196508B1 publication Critical patent/KR100196508B1/en

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

1. 청구범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION

반도체 장치의 제조방법.Method of manufacturing a semiconductor device.

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

베리드 폴리실리콘막 세정 공정에서 HF 세정단계를 거친후 표면의 소수성 특성으로 인하여 원형 결함이 베리드 폴리실리콘막 표면에 흡착되는데, 이러한 원형 결함은 이후의 HCI 처리후에도 제거되지 않고 남게 되어 반도체 장치의 동작 특성을 저하시키는 문제점이 있었음.After the HF cleaning step in the buried polysilicon film cleaning process, due to the hydrophobic nature of the surface, circular defects are adsorbed on the surface of the buried polysilicon film. There was a problem of deteriorating operation characteristics.

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

NH4OH 세정단계를 추가하므로써 원형 결함을 제거하는 반도체 장치의 베리드 폴리실리콘막 세정방법을 제공하고자함.It is to provide a method for cleaning a buried polysilicon film of a semiconductor device that eliminates circular defects by adding an NH 4 OH cleaning step.

4. 발명의 중요한 용도4. Important uses of the invention

반도체 장치 제조공정 중, 베리드 폴리실리콘막을 사용하는 폴리실리콘막 형성시에 이용됨.It is used in forming a polysilicon film using a buried polysilicon film during a semiconductor device manufacturing process.

Description

반도체 장치의 폴리실리콘막 세정방법Method for Cleaning Polysilicon Film of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

Claims (3)

반도체 장치 제조방법에 있어서, HF 용액을 이용하여 세정하는 단계와, NH4OH 용액을 이용하여 세정하는 단계, 및 HCI 용액을 이용하여 세정하는 단계를 포함하여 이루어진 반도체 장치의 폴리실리콘막 세정방법.A method of manufacturing a semiconductor device, comprising: cleaning using an HF solution, cleaning using an NH 4 OH solution, and cleaning using an HCI solution. 제1항에 있어서, 상기 HF 처리하는 단계전에 H2SO4처리하는 단계를 더 포함하여 이루어진 것을 특징으로 하는 반도체 장치의 폴리실리콘막 세정방법.The method according to claim 1, further comprising the step of H 2 SO 4 treatment before the step of HF treatment. 제1항 또는 제2항에 있어서, 상기 NH4OH 용액을 이용하여 세정하는 단계는 NH4OH : H2O2: 순수의 조성비를 1 : 2 : 10 인 용액을 이용하여 세정하는 단계인 것을 특징으로 하는 반도체 장치의 폴리실리콘막 세정방법.The method of claim 1 or 2, wherein the washing using the NH 4 OH solution is a step of washing using a solution having a composition ratio of NH 4 OH: H 2 O 2 : pure water 1: 2: 10. A method for cleaning a polysilicon film of a semiconductor device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960023659A 1996-06-25 1996-06-25 Method of cleaning polysilicon of semiconductor device KR100196508B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960023659A KR100196508B1 (en) 1996-06-25 1996-06-25 Method of cleaning polysilicon of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960023659A KR100196508B1 (en) 1996-06-25 1996-06-25 Method of cleaning polysilicon of semiconductor device

Publications (2)

Publication Number Publication Date
KR980005901A true KR980005901A (en) 1998-03-30
KR100196508B1 KR100196508B1 (en) 1999-06-15

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KR1019960023659A KR100196508B1 (en) 1996-06-25 1996-06-25 Method of cleaning polysilicon of semiconductor device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100977264B1 (en) * 2010-02-17 2010-08-23 서도석 A wood frame using the korean paper coated loess and the method for manufacturing as the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104409324A (en) * 2014-11-12 2015-03-11 吉林华微电子股份有限公司 Polycrystalline-silicon-phosphor-doping after-treatment cleaning method capable of avoiding contamination

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100977264B1 (en) * 2010-02-17 2010-08-23 서도석 A wood frame using the korean paper coated loess and the method for manufacturing as the same

Also Published As

Publication number Publication date
KR100196508B1 (en) 1999-06-15

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