KR950007006A - Well cleaning process method of semiconductor device - Google Patents

Well cleaning process method of semiconductor device Download PDF

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Publication number
KR950007006A
KR950007006A KR1019930015114A KR930015114A KR950007006A KR 950007006 A KR950007006 A KR 950007006A KR 1019930015114 A KR1019930015114 A KR 1019930015114A KR 930015114 A KR930015114 A KR 930015114A KR 950007006 A KR950007006 A KR 950007006A
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KR
South Korea
Prior art keywords
dip
water
cleaning process
semiconductor device
process method
Prior art date
Application number
KR1019930015114A
Other languages
Korean (ko)
Other versions
KR960012625B1 (en
Inventor
장병훈
선종웅
최돈전
김동균
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930015114A priority Critical patent/KR960012625B1/en
Publication of KR950007006A publication Critical patent/KR950007006A/en
Application granted granted Critical
Publication of KR960012625B1 publication Critical patent/KR960012625B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

본 발명은 고집적 반도체 소자의 웸 크린닝(Wet Cleaning) 공정방법에 관한 것으로, 특히 실리콘 기판 또는 폴리실리콘층 상부에 형성된 산화막(Oxide)을 식각하기 위해 웸 크린닝 공정을 실시하는데 웸 크린닝 공정에서 발생되는 파티클(Particle)을 제거하기 위해 HF딥(Dip)gndp H2O2딥을 실시하는 웸 크린닝 공정방법에 관한 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wet cleaning process method for a highly integrated semiconductor device. In particular, a wet cleaning process is performed to etch an oxide film formed on a silicon substrate or a polysilicon layer. The present invention relates to a wet cleaning process method in which HF dip (Dip) gndp H 2 O 2 dip is performed to remove generated particles.

Description

반도체 소자의 웸 크린닝 공정방법Thermal cleaning process method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 웸 크린닝 공정단계를 도시한 블록도.2 is a block diagram showing the wet cleaning process step of the present invention.

Claims (3)

반도체 소자의 제조공정의 웸 크린닝 공정방법에 있어서, 1단계로 유기물을 식각하는 제1단계로 유기물을 식각하는 H2SO4+H2O2딥 공정, 2단계로 D.I.수 린스공정, 3단계로 실리콘층에 형성된 산화막을 식각하는 HF+D.I.수 딥공정, 4단계로 H2O2딥공정, 5단계로 D.I.수 린스공정, 제6단계로 무기물을 식각하는 HCI+H2O2+D.I.수 딥공정, 제7단계로 제1 D.I.수 린스 공정, 제8단계로 제2 D.I. 수 린스공정,제9단계로 웨이퍼를 건조시키는 스핀드라이어 공정을 포함하는 것을 특징으로 하는 반도체 소자의 웸 크린닝 공정방법.In the wet-cleaning process method of the manufacturing process of a semiconductor device, H 2 SO 4 + H 2 O 2 Dip step of etching the organic material in the first step of etching the organic material in one step, DI water rinsing step, 3 HF + DI water dip process to etch the oxide film formed on the silicon layer in steps, H 2 O 2 dip process to 4 steps, DI water rinse process to 5 steps, HCI + H 2 O 2 + The DI water dip process, the first DI water rinse process in the seventh step, the second DI water rinse process in the eighth step, and the spin dryer process for drying the wafer in the ninth step Ning process method. 제1항에 있어서, 상기 제3단계의 산화막을 식각하는 HF+D.I.수 딥공정에서 노출되는 실리콘층 표면에 자연산화막이 10Å정도 자라도록 하는 것을 특징으로 하는 반도체 소자의 웸 크린닝 공정방법.The method of claim 1, wherein the native oxide film grows on the surface of the silicon layer exposed in the HF + D.I.water dip process of etching the oxide film in the third step. 제2항에 있어서, 상기 실리콘층은 실리콘 기판 또는 폴리실리콘층인 것을 특징으로 하는 반도체 소자의 웸 크린닝 공정방법.The method of claim 2, wherein the silicon layer is a silicon substrate or a polysilicon layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930015114A 1993-08-04 1993-08-04 Wet cleaning process of semiconductor device KR960012625B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930015114A KR960012625B1 (en) 1993-08-04 1993-08-04 Wet cleaning process of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930015114A KR960012625B1 (en) 1993-08-04 1993-08-04 Wet cleaning process of semiconductor device

Publications (2)

Publication Number Publication Date
KR950007006A true KR950007006A (en) 1995-03-21
KR960012625B1 KR960012625B1 (en) 1996-09-23

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Application Number Title Priority Date Filing Date
KR1019930015114A KR960012625B1 (en) 1993-08-04 1993-08-04 Wet cleaning process of semiconductor device

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KR (1) KR960012625B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020095930A (en) * 2001-06-18 2002-12-28 엘지이노텍 주식회사 Maxium, minium and decetor of final value
KR100889536B1 (en) * 2002-11-14 2009-03-23 엘지디스플레이 주식회사 Liquid Crystal Display Device And method for fabricating Liquid Crystal Display Device by using the same
KR102175738B1 (en) * 2019-07-15 2020-11-06 (주)에이텍티앤 Foreign substance disposing apparatus for coin deposit module

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020095930A (en) * 2001-06-18 2002-12-28 엘지이노텍 주식회사 Maxium, minium and decetor of final value
KR100889536B1 (en) * 2002-11-14 2009-03-23 엘지디스플레이 주식회사 Liquid Crystal Display Device And method for fabricating Liquid Crystal Display Device by using the same
KR102175738B1 (en) * 2019-07-15 2020-11-06 (주)에이텍티앤 Foreign substance disposing apparatus for coin deposit module

Also Published As

Publication number Publication date
KR960012625B1 (en) 1996-09-23

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