KR100889536B1 - Liquid Crystal Display Device And method for fabricating Liquid Crystal Display Device by using the same - Google Patents

Abstract

When etching triple wiring using different etching solutions, the liquid crystal display device can reduce the process time, improve the efficiency of the equipment, and prevent the formation of gel by mixing the etching solutions and using the same In order to provide a method of manufacturing a liquid crystal display device, a liquid crystal display device for achieving the above object includes a first etching bath for performing a first etching process using a first etching solution; A second etching bath performing a second etching process using a second etching solution in the same equipment as the first etching bath; A first etching solution liquid bath, a rinse bath, and a drying bath provided between the first etching bath and the second etching bath to remove the first etching solution; A second etching solution rinse bath for removing the second etching solution after the second etching process; A second etching solution drying bath for drying the second etching solution is provided in a single equipment, and the first etching solution rinse bath is used to rinse the first etching solution two times. It is characterized by consisting of a tea rinse bath.

Liquid, rinse, dry, etch, single equipment

Description

Liquid Crystal Display Device and method for fabricating Liquid Crystal Display Device by using the same}

1 is an enlarged plan view illustrating unit pixels of a general liquid crystal display device;

2A through 2E are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the related art and the present invention.

3 is a process flowchart showing a method of manufacturing a liquid crystal display device according to the prior art;

4 is a process flowchart showing a method of manufacturing a liquid crystal display device according to an embodiment of the present invention.

5 is a flowchart illustrating a detailed process of S62 of FIG. 4.

6 is a block diagram of a liquid crystal display according to the present invention.

Explanation of symbols on the main parts of the drawings

60: first etching bath 71: first etching solution liquid bath

72: first etching solution primary rinse bath 73: first etching solution secondary rinse bath

74: first etching solution drying bath 80: second etching bath

90: second etching solution rinse bath 100: second etching solution dry bath

The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device and a method of manufacturing a liquid crystal display device using the same, in which the data line and the source / drain electrodes are formed in a triple wiring to proceed as a single device to simplify the process It is about.

As the information society develops, the demand for display devices is increasing in various forms.In recent years, liquid crystal display (LCD), plasma display panel (PDP), electro luminescent display (ELD), and vacuum fluorescent display (VFD) have been developed. Various flat panel display devices have been studied, and some are already used as display devices in various devices.

Among them, LCD is the most widely used as a substitute for CRT (Cathode Ray Tube) for the use of mobile image display device because of the excellent image quality, light weight, thinness, and low power consumption, and mobile type such as monitor of notebook computer. In addition, it is being developed in various ways, such as a television for receiving and displaying broadcast signals, and a monitor of a computer.

As described above, although various technical advances have been made in order for the liquid crystal display device to serve as a screen display device in various fields, the task of improving the image quality as the screen display device has many advantages and disadvantages.

Therefore, in order for a liquid crystal display device to be used in various parts as a general screen display device, the key to development is how much high quality images such as high definition, high brightness, and large area can be realized while maintaining the characteristics of light weight, thinness, and low power consumption. This can be said to be hanging.

Such a liquid crystal display may be largely divided into a liquid crystal panel displaying an image and a driving unit for applying a driving signal to the liquid crystal panel. The liquid crystal panel has a predetermined space, and includes an upper substrate, a lower substrate, and the upper and lower substrates. It is composed of a liquid crystal layer formed between the lower substrate.

Here, the lower substrate (TFT array substrate) includes a plurality of gate wirings arranged in one direction at a predetermined interval, a plurality of data wirings arranged at regular intervals in a direction perpendicular to the respective gate wirings, and the respective gate wirings. A plurality of pixel electrodes formed in a matrix form in each pixel region defined by intersections of the data lines and a plurality of thin film transistors which are switched by signals of the gate lines to transfer the signals of the data lines to the pixel electrodes. Is formed.

In the upper substrate (color filter substrate), a black matrix layer for blocking light except for the pixel region, an R, G, and B color filter layer for expressing color colors, and a common electrode for implementing an image are formed. do.

In addition, the upper substrate and the lower substrate thus formed have a predetermined space by a spacer for maintaining a cell gap, and are bonded by a sealant. And liquid crystal is formed in the space inside a seal material.

When manufacturing a liquid crystal display device having such a structure, instead of forming one liquid crystal panel on one substrate, a plurality of liquid crystal panels are simultaneously formed on one large substrate according to the size of the substrate and the size of the liquid crystal panel. .

A general liquid crystal display device having the above configuration will be described in more detail with reference to a plan view.

1 is an enlarged plan view illustrating a unit pixel of a general liquid crystal display device.

In a typical liquid crystal display device, as shown in FIG. 1, the gate lines 11 are arranged in parallel in one direction at a predetermined interval on a transparent lower substrate, and the gate electrodes 11a are disposed in one direction in the gate line 11. The storage lower electrode is integrally formed with the gate line 11 at the storage capacitor position of the front gate line.

Although not shown in the drawing, a gate pad is formed at the end of the gate line 11, and a source pad is formed at the end of the data line 14.

A gate insulating film (not shown) is formed on the substrate including the gate line 11, the gate electrode 11a, and the storage lower electrode to electrically insulate the upper layer from the gate insulating film on the gate electrode 11a. The active layer 13 is formed in this.

In this case, the active layer 13 is formed of a stacked structure of an amorphous silicon layer and an amorphous silicon doped.

There is a data line 14 intersecting with the gate line 11 to define a pixel region. The source electrode 15 protrudes in one direction from the data line 14 and overlaps one side of the active layer 13. ) And a drain electrode 16 formed to be spaced apart from the source electrode 15 and overlapping the other side of the active layer 13.

The storage upper electrode 19 is formed on the storage lower electrode.

A passive layer (not shown) is formed on the lower substrate so as to have first and second contact holes 17a and 17b in the storage upper electrode 19 and the drain electrode 16, respectively. The pixel electrode 18 is formed in the pixel area to contact the storage upper electrode 19 and the drain electrode 16 through the contact holes 17a and 17b.

Hereinafter, a manufacturing method of a conventional liquid crystal display device will be described with reference to the accompanying drawings.

2A to 2E are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the prior art, and FIG. 3 is a process flowchart illustrating a method of manufacturing a liquid crystal display device according to the prior art.

2. Description of the Related Art A conventional method for manufacturing a liquid crystal display device includes one of conductive metal films such as chromium, aluminum, aluminum alloy (AlNd), tantalum, and molybdenum (Mo) on a transparent lower substrate 10 as shown in FIGS. 2A and 3. Deposit.

Subsequently, one of the conductive metal layers is photo-etched using a gate forming mask to form gate lines arranged in one direction and gate electrodes 11a protruding to one side of the gate lines.

Next, a gate insulating film 12 is formed on the entire lower substrate 10 including the gate electrode 11a.

The amorphous silicon layer 13a for forming an active layer and the n + amorphous silicon layer 13b are sequentially deposited on the gate insulating film 12.

Thereafter, the amorphous silicon layer 13a and the n + amorphous silicon layer 13b are etched using the active forming mask to form the active layer 13 above the gate electrode 11a.

Then, the first to third conductive layers 14a, 14b, and 14c made of molybdenum (Mo), aluminum-neodymium (AlNd), and chromium (Cr) are sequentially deposited on the entire lower substrate 10. (S30)

The reason why the conductive layer is formed in three layers as described above is that if molybdenum (Mo) is formed under the aluminum-neodymium (AlNd), hillock occurs in the aluminum-neodymium (AlNd) or a splash phenomenon occurs. It is possible to prevent the occurrence of the chromium (Cr) formed on the top of aluminum-neodymium (AlNd) to prevent the formation of an oxide film on the top of the AlNd.

Next, as shown in FIGS. 2B and 3, the photoresist film 20 is deposited on the third conductive layer 14c, and then the photoresist film 20 is selectively patterned by an exposure and development process to form a data line (not shown). And a mask for forming a source / drain electrode is prepared (S31).

As illustrated in FIGS. 2C and 3, the third conductive layer 14c is etched with the first etching solution in the first etching apparatus using the photosensitive film 20 as a mask (S32).

The rinse / drying apparatus is moved to rinse / dry the first etching solution.                         

In this case, the first etching solution may use CAN (Ceric Ammonium Nitrate) or nitric acid.

Thereafter, as shown in FIGS. 2D and 3, the second and first conductive layers 14b and 14a are sequentially etched (S33) using the second etching solution in the second etching equipment.

At this time, the second etching solution is a mixture of phosphoric acid, nitric acid, acetic acid, DI (De Ionized).

Afterwards, the rinse / drying apparatus is moved to rinse / dry the second etching solution.

As a result, the photosensitive film 20 used as a mask is removed (S34), and as shown in FIG. 2E, the source electrode 15 and the drain electrode on which molybdenum (Mo), aluminum-neodymium (AlNd), and chromium (Cr) are stacked. 16 and data line 14 (see FIG. 1).

In this case, the source electrode 15 and the drain electrode 16 are formed to overlap one side and the other upper portion of the gate electrode 11a, and the data line 14 is formed to be perpendicular to the gate line 11.

When the first to third conductive layers stacked as described above are etched to form the source electrode 15, the drain electrode 16, and the data line 14, different etchantes are used in different etching equipment. Process time is long and the efficiency of equipment is reduced because it needs to proceed.

When etching the first to third conductive layers stacked in the same etching apparatus, the first and second etching solutions may be mixed to cause a chemical reaction, thereby forming a gel.

The present invention has been made to solve the above problems, an object of the present invention is to reduce the process time when performing the etching process using a different etching solution, and to improve the efficiency of the equipment and It is to provide a method of manufacturing a liquid crystal display device using the same.

Another object of the present invention is to provide a liquid crystal display device and a method of manufacturing a liquid crystal display device using the same to prevent the formation of a gel (Gel) when the etching process using a different etching solution.

delete

The liquid crystal display device having the above configuration includes a first etching bath for performing a first etching process using the first etching solution; A second etching bath performing a second etching process using a second etching solution in the same equipment as the first etching bath; A first etching solution liquid bath, a rinse bath, and a drying bath provided between the first etching bath and the second etching bath to remove the first etching solution; A second etching solution rinse bath for removing the second etching solution after the second etching process; A second etching solution drying bath for drying the second etching solution is provided in a single equipment, and the first etching solution rinse bath is used to rinse the first etching solution two times. It is characterized by consisting of a tea rinse bath.

A method of manufacturing a liquid crystal display device of the present invention using the liquid crystal display device includes the steps of forming a gate line arranged in one direction on the substrate and a gate electrode protruding to one side of the gate line; Forming a gate insulating film on the substrate including the gate electrode; Forming an active layer on the gate insulating film on the gate electrode; Sequentially forming molybdenum (Mo), aluminum-neodymium (AlNd), and chromium (Cr) on the gate insulating layer including the active layer; Selectively etching the chromium with a first etching solution in a first etching bath of a single etching equipment, and amplifying, first rinsing, secondary rinsing and drying the first etching solution; A source stacked with molybdenum, aluminum-neodymium, and chromium to selectively etch the aluminum-neodymium and molybdenum with a second etching solution different from the first etching solution in the second etching bath so as to overlap one side and the other upper portion of the gate electrode. Forming a drain electrode and forming a data line to be orthogonal to the gate line; Rinsing and drying the second etching solution is characterized in that it comprises.

Hereinafter, a liquid crystal display device and a method of manufacturing a liquid crystal display device using the same according to an exemplary embodiment of the present invention will be described with reference to the accompanying drawings.

First, a method of manufacturing a liquid crystal display device according to an embodiment of the present invention will be described.

2A to 2E are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the present invention, FIG. 4 is a process flowchart showing a method of manufacturing a liquid crystal display device according to an embodiment of the present invention, and FIG. It is a flowchart showing the detailed process of a step "S62".

In the method of manufacturing a liquid crystal display device according to an embodiment of the present invention, when a source / drain electrode and a data line are formed of a triple film of Cr / AlNd / Mo, the gel is formed into two kinds of etching solutions in a single device. It is characterized by a method that can be patterned without formation.

In the method of manufacturing a liquid crystal display device according to an exemplary embodiment of the present invention, as shown in FIGS. 2A and 4, chromium, aluminum, aluminum alloy (AlNd), tantalum, molybdenum (Mo), etc., are disposed on the transparent lower substrate 10. One of the conductive metal films of is deposited.

Subsequently, one of the conductive metal layers is photo-etched using a gate forming mask to form gate lines arranged in one direction and gate electrodes 11a protruding to one side of the gate lines.

Next, a gate insulating film 12 is formed on the entire lower substrate 10 including the gate electrode 11a.

The amorphous silicon layer 13a for forming an active layer and the n + amorphous silicon layer 13b are sequentially deposited on the gate insulating film 12.

Thereafter, the amorphous silicon layer 13a and the n + amorphous silicon layer 13b are etched using the active forming mask to form the active layer 13 above the gate electrode 11a.

Then, the first to third conductive layers 14a, 14b, and 14c made of molybdenum (Mo), aluminum-neodymium (AlNd), and chromium (Cr) are sequentially deposited on the entire lower substrate 10. (S40)

The reason why the conductive layer is formed in three layers as described above is that when molybdenum (Mo) is formed under aluminum-neodymium (AlNd), hillock occurs in the aluminum-neodymium (AlNd) or a splash phenomenon occurs. If the chromium (Cr) is formed on aluminum-neodymium (AlNd), it is possible to prevent the formation of an oxide film on the AlNd.

Next, as shown in FIGS. 2B and 4, the photoresist film 20 is deposited on the third conductive layer 14c, and then the photoresist film 20 is selectively patterned by an exposure and development process to form a data line (not shown). And a mask for forming a source / drain electrode is prepared (S50).

As shown in FIGS. 2C, 2D, and 4, the third conductive layer 14c is etched with the first etching solution in a single etching apparatus using the photoresist film 20 as a mask (S61), and then with the first etching solution. After rinsing / drying (S62), the second and first conductive layers 14b and 14a are sequentially etched (S63) with a second etching solution.

In detail, as illustrated in FIGS. 4, 5, and 6, the third conductive layer 14c is etched with the first etching solution from the first etching bath 60 in the etching apparatus using the photosensitive film 20 as a mask.

In this case, the first etching solution uses Ceric Ammonium Nitrate (CAN) or nitric acid, which is used to etch Cr, which is the third conductive layer 14c.

Thereafter, the first etching solution is liquefied in the first etching solution liquid crystal bath 71. At this time, the liquid section uses a method of drying using an air knife.

Next, the first etching solution is first rinsed in the first etching solution primary rinse bath 72. Linz uses a method such as Aqua Knife or Shower.

Subsequently, the first etching solution is secondly rinsed in the first etching solution secondary rinse bath 73.

Thereafter, the first etching solution is dried in the first etching solution drying bath 74.

Next, the second and first conductive layers 14b and 14a are etched using the second etching solution using the photosensitive film 20 as a mask in the second etching bath 80 (S63).

At this time, the second etching solution is a mixture of phosphoric acid: nitric acid: acetic acid: DI (De Ionized) in a ratio of 20%: 16%: 5%: 59%, and the second and first conductive layers AlNd and Mo (14b, 14a). ) To etch.

Thereafter, the second etching solution is rinsed and dried in the second etching solution rinse bath 90 and the second etching solution drying bath 100.

As a result, the photoresist film 20 used as a mask is removed (S70), and as shown in FIG. 2E, the source electrode 15 and the drain electrode in which molybdenum (Mo), aluminum-neodymium (AlNd) and chromium (Cr) are stacked 16 and data line 14 (see FIG. 1).

In this case, the source electrode 15 and the drain electrode 16 are formed to overlap one side and the other upper portion of the gate electrode 51a, and the data line 14 is formed to be orthogonal to the gate line 11.

When forming the source electrode 15 and the drain electrode 16, the ohmic contact layer is formed by excessively etching the n + amorphous silicon layer 13b so that the amorphous silicon layer 13a is exposed.

As described above, the baths in which the first to third conductive layers 14a, 14b, and 14c are etched and the baths in which the first and second etching solutions are rinsed / dried are all included in the same equipment. The drying process also goes through a series of processes on the same equipment.

Next, although not shown in the drawings, a protective film is deposited on the lower substrate 10 and a mask pattern is formed on the protective film. Then, the protective film is etched using the mask pattern to form one region of the drain electrode and one region of the front gate line. A contact hole is formed in the hole.

In this case, the protective layer may be an inorganic insulating material such as silicon nitride (Si 3 N 4) or silicon oxide (SiO 2), or an acrylic organic compound, Teflon, BCB (benzocyclobuten), Cytop, or PFCB (Perfluorocyclobutane). It may be formed by selecting at least one of the organic material having a low dielectric constant of.

Next, a transparent electrode is deposited on the lower substrate and then etched to form a pixel electrode in the pixel region including the contact hole.

In this case, the pixel electrode is made of one material of ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide) or ITZO (Indium-Tin-Zinc-Oxide).

Next, the configuration of the liquid crystal display device according to the embodiment of the present invention used in the method for manufacturing the liquid crystal display element will be described.

6 is a block diagram of a liquid crystal display according to the present invention.

According to an exemplary embodiment of the present invention, a liquid crystal display device includes a source / drain electrode and a data line formed of a triple layer of molybdenum (Mo), aluminum-neodymium (AlNd), and chromium (Cr). Etching device used to

As shown in FIG. 6, the first etching bath 60, the first etching solution liquid bath 71, the first etching solution rinse bath 72, and the first etching solution in the single etching equipment are shown in FIG. 6. A rinse bath 73, a first etching solution drying bath 74, a second etching bath 80, a second etching solution rinse bath 90, and a second etching solution drying bath 100. .                     

The first etching bath 60 is for etching the third conductive layer 14c made of chromium (Cr) using the first etching solution made of Ceric Ammonium Nitrate (CAN) or nitric acid.

The first etching solution liquid bath 71, the first etching solution primary rinse bath 72, the first etching solution secondary rinse bath 73, and the first etching solution drying bath 74 are the first etching bath. A bath for completely removing the first etching solution before moving to the second etching bath 80 at 60 and etching the second and first conductive layers 14b and 14a.

That is, the first etching solution liquid bath 71, the first etching solution primary rinse bath 72, the first etching solution secondary rinse bath 73, and the first etching solution drying bath 74 are the first etching solution. It is a rinse zone for preventing the formation of a gel by mixing with the second etching solution to cause a chemical reaction.

In this way, if an axle / rinse / dry bath (rinse area) is provided between the first and second etching baths using different etching solutions, the etching process using the two etching solutions is performed. You can go through a series of processes within.

In addition, the first etching solution secondary rinse bath 73 is provided to more reliably clean the first etching solution that may remain after the rinse process through the first etching solution primary rinse bath 73. .

The second etching bath 80 is for sequentially etching the second and first conductive layers 14b and 14a made of AlNd and Mo using the second etching solution made of mixed acid described above.

The second etching solution rinse bath 90 and the second etching solution drying bath 100 are for rinsing and drying the second etching solution.

In the above, the first etching solution was limited to using CAN, nitric acid, and the second etching solution by using mixed acid.

However, the liquid crystal display device of the present invention is not limited to the etching solution as described above, and can be applied to all of the processes of etching the multilayer conductive layer or the insulating layer using different etching solutions.

That is, by equating the liquid rinse / rinse / dry bath of the solution between baths that are etched with different etching solutions, two or more steps of etching processes using different etching solutions can be performed in a single device. .

The liquid crystal display of the present invention as described above and the manufacturing method of the liquid crystal display device using the same have the following effects.

First, by having a bath to liquefy, rinse, and dry the solution between etching baths using different etching solutions, different etching solutions in a single device without forming gel by chemical reaction of the etching solution. The etching process can be performed using.

Second, since the etching process of two or more steps using different etching solutions can be performed in one equipment, the process time can be shortened and the efficiency of the etching equipment can be improved.                     

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the spirit of the present invention.

Therefore, the technical scope of the present invention should not be limited to the contents described in the above embodiments, but should be defined by the claims.

Claims (9)

delete A first etching bath performing a first etching process using the first etching solution; A second etching bath performing a second etching process using a second etching solution in the same equipment as the first etching bath; A first etching solution liquid bath, a rinse bath, and a drying bath provided between the first etching bath and the second etching bath to remove the first etching solution; A second etching solution rinse bath for removing the second etching solution after the second etching process; A second etching solution drying bath for drying the second etching solution is provided in a single equipment, The first etching solution rinse bath is a liquid crystal display, characterized in that the first etching solution is composed of a first, second rinse bath to rinse the first etching solution twice. delete Forming a gate line arranged in one direction on the substrate and a gate electrode protruding to one side of the gate line; Forming a gate insulating film on the substrate including the gate electrode; Forming an active layer on the gate insulating film on the gate electrode; Sequentially forming molybdenum (Mo), aluminum-neodymium (AlNd), and chromium (Cr) on the gate insulating layer including the active layer; Selectively etching the chromium with a first etching solution in a first etching bath of a single etching equipment, and amplifying, first rinsing, secondary rinsing and drying the first etching solution; A source stacked with molybdenum, aluminum-neodymium, and chromium to selectively etch the aluminum-neodymium and molybdenum with a second etching solution different from the first etching solution in the second etching bath so as to overlap one side and the other upper portion of the gate electrode. Forming a drain electrode and forming a data line to be orthogonal to the gate line; And rinsing and drying the second etching solution. delete delete The method of claim 4, wherein The first etching solution is a manufacturing method of a liquid crystal display device, characterized in that using CAN (Ceric Ammonium Nitrate) or nitric acid. The method of claim 4, wherein The second etching solution is a method of manufacturing a liquid crystal display device, characterized in that for mixing phosphoric acid, nitric acid and acetic acid and DI (De Ionized). The method of claim 8, The phosphoric acid: nitric acid: acetic acid: DI (De Ionized) is a method of manufacturing a liquid crystal display device characterized in that the mixture of 20%: 16%: 5%: 59%.

Images