KR20000003169A - Capacitor having assist capacitance of liquid crystal display element and forming method of the same - Google Patents
Capacitor having assist capacitance of liquid crystal display element and forming method of the same Download PDFInfo
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- KR20000003169A KR20000003169A KR1019980024335A KR19980024335A KR20000003169A KR 20000003169 A KR20000003169 A KR 20000003169A KR 1019980024335 A KR1019980024335 A KR 1019980024335A KR 19980024335 A KR19980024335 A KR 19980024335A KR 20000003169 A KR20000003169 A KR 20000003169A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 10
- 230000003746 surface roughness Effects 0.000 claims 1
- 238000002955 isolation Methods 0.000 abstract 5
- 239000010408 film Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000006872 improvement Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract
Description
본 발명은 액정표시소자에 관한 것으로, 보다 상세하게는, 액정표시소자의 보조 용량 캐패시터 및 그의 형성방법에 관한 것이다.The present invention relates to a liquid crystal display device, and more particularly, to a storage capacitor of the liquid crystal display device and a method for forming the same.
텔레비젼 및 그래픽 디스플레이 등의 표시 장치에 이용되는 액정표시소자(Liquid Crystal Display : 이하, LCD)는 CRT(Cathod-ray tube)를 대신하여 개발되어져 왔다. 특히, 매트릭스 형태로 배열된 각 화소에 스위칭 소자로서 박막 트랜지스터(Thin Film Transistor : 이하, TFT)가 구비되는 TFT LCD는 고속 응답 특성을 갖는 잇점과 높은 화소수에 적합하다는 잇점 때문에 CRT에 필적할만한 표시 화면의 고화질화 및 대형화, 컬러화 등을 실현하는데 크게 기여하고 있다.Liquid crystal displays (LCDs) used in display devices such as televisions and graphic displays have been developed in place of the CRT (Cathod-ray tube). In particular, a TFT LCD having a thin film transistor (TFT) as a switching element in each pixel arranged in a matrix form is comparable to a CRT because of the advantages of having high-speed response characteristics and suitable for high pixel count. It is greatly contributing to realizing high screen quality, large size, and color.
한편, TFT LCD에서 좋은 화상을 얻기 위해서는 데이터 라인을 통하여 인가된 첫 번째 신호의 전압을 두 번째 신호가 전달될 때까지 일정하게 유지시키는 것이 필요하며, 이를 위해 각 화소에 보조 용량 캐패시터(CS)를 형성한다. 여기서, 보조 용량 캐패시터(CS)는 화소 내에 보조 용량 전극을 형성함으로써 구현되며, 통상 보조 용량 전극은 불투명 금속으로 형성되며, 아울러, 게이트 라인의 형성시에 함께 형성된다.On the other hand, in order to obtain a good image in the TFT LCD it is necessary to remain constant until the voltage of the first signal applied through the data line two is transmitted second signal, the storage capacitor the capacitor in each pixel for this purpose (C S) To form. Here, the storage capacitor capacitor C S is implemented by forming the storage capacitor electrode in the pixel, and the storage capacitor electrode is usually formed of an opaque metal, and together with the formation of the gate line.
도 1 은 종래 LCD의 보조 용량 캐패시터를 설명하기 위한 평면도이다. 도시된 바와 같이, 하부기판(1) 상에 게이트 라인들(2)과 데이터 라인들(4)이 직교하도록 배열되어 있으며, 인접된 게이트 라인들 사이에는 보조 용량 전극 라인(6)이 형성되어 있다. 그리고, 게이트 라인(2) 및 데이터 라인(4)에 의해 한정된 화소에는 ITO(Indium Tin Oxide)와 같은 투명 금속으로된 화소 전극(8)이 보조 용량 전극 라인(6)의 일부, 즉, 보조 용량 전극(6a)과 오버랩되게 배치되어 있다.1 is a plan view for explaining a storage capacitor of a conventional LCD. As shown, the gate lines 2 and the data lines 4 are arranged on the lower substrate 1 so as to be perpendicular to each other, and the storage capacitor electrode line 6 is formed between adjacent gate lines. . In the pixel defined by the gate line 2 and the data line 4, a pixel electrode 8 made of a transparent metal such as indium tin oxide (ITO) is a part of the storage capacitor electrode line 6, that is, the storage capacitor. It is arrange | positioned so that it may overlap with the electrode 6a.
여기서, 보조 용량 전극(6a)과 화소전극(8) 사이에는 도 2 에 도시된 바와 같이 게이트 라인과 데이트 라인간을 절연시키기 위하여 형성되는 절연막(7)이 개재되어 있으며, 이에 따라, 보조 용량 전극(6a)과 화소전극(8) 사이에는 보조 용량 캐패시터(CS)가 형성된다.Here, an insulating film 7 is formed between the storage capacitor electrode 6a and the pixel electrode 8 to insulate the gate line from the data line, as shown in FIG. between (6a) and the pixel electrode 8 is formed with a storage capacitance capacitor (C S).
그러나, 상기한 보조 용량 캐패시터(CS)는 하기에 도시된 식 1로부터 그 값이 결정되는데, 이때, 보조 용량 전극과 화소 전극간의 간격을 감소시키거나, 또는, 보조 용량 전극의 면적을 증가시키는 방법으로 보조 용량 캐패시터를 향상시킬 수 있으나, 보조 용량 전극과 화소 전극간의 간격을 감소시키는데는 그 한계가 있고, 보조 용량 전극의 면적을 향상시키는 것은 오히려 불투명 금속으로된 보조 용량 전극에 의해 화소에서의 개구율 감소가 초래되기 때문에 종래 기술에서는 보조 용량 캐패시터를 향상시킬 수 없는 문제점이 있었다.However, the value of the storage capacitor C S is determined from Equation 1 shown below, whereby the distance between the storage capacitor electrode and the pixel electrode is reduced, or the area of the storage capacitor electrode is increased. It is possible to improve the storage capacitor by the method, but there is a limit in reducing the distance between the storage capacitor electrode and the pixel electrode, and the improvement of the area of the storage capacitor electrode is rather reduced in the pixel by the storage capacitor electrode made of opaque metal. In the prior art, there is a problem in that the storage capacitor can not be improved because the aperture ratio is reduced.
CS= ε
CS: 보조 용량 캐패시터C S : Auxiliary Capacity Capacitor
ε : 유전상수ε: dielectric constant
A : 보조 용량 전극의 면적A: area of the storage capacitor electrode
d : 보조 용량 전극과 화소전극간의 간격d: gap between the storage capacitor electrode and the pixel electrode
따라서, 본 발명의 목적은 단위 면적당 캐패시턴스를 향상시킬 수 있는 LCD의 보조 용량 캐패시터를 제공하는 것이다.Accordingly, it is an object of the present invention to provide a storage capacitor of an LCD which can improve the capacitance per unit area.
본 발명의 다른 목적은 단위 면적당 캐패시턴을 향상시킬 수 있는 LCD의 보조 용량 캐패시터 형성방법을 제공하는 것이다.Another object of the present invention is to provide a method of forming a storage capacitor of an LCD which can improve the capacitance per unit area.
도 1 은 종래 박막 트랜지스터 액정표시소자의 하부기판을 도시한 평면도.1 is a plan view showing a lower substrate of a conventional thin film transistor liquid crystal display device.
도 2 는 도 1 의 Ⅱ-Ⅱ′선을 따라 절단하여 나타낸 단면도.FIG. 2 is a cross-sectional view taken along the line II-II ′ of FIG. 1.
도 3 은 본 발명의 제1실시예에 따른 액정표시소자의 보조 용량 캐패시터를 설명하기 위한 도면.3 is a view for explaining a storage capacitor of the liquid crystal display device according to the first embodiment of the present invention.
도 4 는 본 발명의 제2실시예에 따른 액정표시소자의 보조 용량 캐패시터를 설명하기 위한 도면.4 is a view for explaining a storage capacitor of the liquid crystal display device according to the second embodiment of the present invention.
도 5 는 본 발명의 제3실시예에 따른 액정표시소자의 보조 용량 캐패시터를 설명하기 위한 도면.5 is a view for explaining a storage capacitor of the liquid crystal display device according to the third embodiment of the present invention;
(도면의 주요 부분에 대한 부호의 설명)(Explanation of symbols for the main parts of the drawing)
20,30,40 : 하부기판 22,32,42 : 스토리지 전극20,30,40: lower substrate 22,32,42: storage electrode
24,34,44 : 절연막 26,36,46 : 화소 전극24, 34, 44: insulating film 26, 36, 46: pixel electrode
상기와 같은 목적을 달성하기 위한 본 발명에 따른 LCD의 보조 용량 캐패시터는, 절연 기판; 상기 절연 기판 표면에 형성된 보조 용량 전극; 상기 보조 용량 전극 표면을 포함하는 절연 기판상에 형성되는 절연막; 및 상기 보조 용량 전극과 오버랩되도록 절연막 상에 형성되는 화소 전극을 포함하는 LCD의 보조 용량 캐패시터로서, 상기 보조 용량 전극은 그의 상부 표면에는 굴곡 부위를 갖는 것을 특징으로 한다.The storage capacitor of the LCD according to the present invention for achieving the above object, the insulating substrate; A storage capacitor electrode formed on a surface of the insulating substrate; An insulating film formed on an insulating substrate including the storage capacitor electrode surface; And a pixel electrode formed on the insulating film so as to overlap the storage capacitor electrode, wherein the storage capacitor electrode has a bent portion on an upper surface thereof.
또한, 다른 목적을 달성하기 위한 본 발명에 따른 LCD의 보조 용량 캐패시터 형성방법은, 절연 기판 상에 보조 용량 전극을 형성하는 단계; 상기 보조 용량 전극의 상부 표면에 홀 형태의 미세 패턴들이 구비된 식각 마스크를 이용한 할프 식각(Half Etch) 공정을 수행하여 굴곡 부위를 형성하는 단계; 상기 보조 용량 전극을 포함하는 상기 절연 기판 상에 절연막을 형성하는 단계: 및 상기 보조 용량 전극과 오버랩되도록 절연막 상에 화소 전극을 형성하는 단계를 포함하는 것을 특징으로 한다.In addition, a method of forming a storage capacitor capacitor of the LCD according to the present invention for achieving another object, forming a storage capacitor electrode on an insulating substrate; Forming a bent portion by performing a half etching process using an etch mask having hole-shaped fine patterns on an upper surface of the storage capacitor electrode; Forming an insulating film on the insulating substrate including the storage capacitor electrode, and forming a pixel electrode on the insulating film to overlap the storage capacitor electrode.
본 발명에 따르면, 보조 용량 전극의 상부 표면에 굴곡부를 형성함으로써, 보조 용량 전극의 표면적을 증가시켜 종래 보다는 단위 면적당 캐패시턴스를 향상시킬 수 있다.According to the present invention, by forming a bent portion on the upper surface of the storage capacitor electrode, it is possible to increase the surface area of the storage capacitor electrode to improve the capacitance per unit area than before.
이하, 첨부된 도면에 의거하여 본 발명의 바람직한 실시예를 보다 상세하게 설명하도록 한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 3 은 본 발명의 제1실시예에 따른 LCD의 보조 용량 캐패시터를 설명하기 위한 도면이다. 도시된 바와 같이, 우선, 절연기판 즉, 하부기판(20) 상에 불투명 금속으로 보조 용량 전극(22)을 형성하고, 이어서, 식각 공정을 실시하여 보조 용량 전극의 상부 표면에 굴곡부를 형성한다. 이때, 식각 공정은 미세 직경의 홀 패턴들이 구비된 식각 마스크(도시안됨)를 보조 용량 전극(22) 상에 배치시킨 상태에서, 식각 마스크의 형태대로 할프 식각(Half Etch)을 실시하여 상기 보조 용량 전극(22)의 상부 표면에 굴곡, 즉, 미세 직경을 갖는 수 개의 홈들이 형성되도록 한다.3 is a view for explaining a storage capacitor of the LCD according to the first embodiment of the present invention. As shown, first, the storage capacitor electrode 22 is formed of an opaque metal on an insulating substrate, that is, the lower substrate 20, and then an etching process is performed to form a bent portion on the upper surface of the storage capacitor electrode. In this case, in the etching process, an etching mask (not shown) having fine diameter hole patterns is disposed on the storage capacitor electrode 22, and half etching is performed in the form of an etching mask to form the storage capacitor. In the upper surface of the electrode 22 is bent, that is, several grooves having a fine diameter are formed.
그런 다음, 상부 표면에 굴곡이 형성된 보조 용량 전극(22) 상에 절연막(24), 즉, 게이트 라인과 데이터 라인간을 절연시키기 위한 게이트 절연막을 형성한 후, 절연막(24) 상에 ITO 금속막을 증착 및 패터닝하여 상기 보조 용량 전극(22)과 오버랩되게 화소 전극(26)을 형성한다.Then, an insulating film 24, i.e., a gate insulating film for insulating the gate line and the data line, is formed on the storage capacitor electrode 22 having the bend on the upper surface thereof, and then an ITO metal film is formed on the insulating film 24. The pixel electrode 26 is formed to overlap the storage capacitor electrode 22 by deposition and patterning.
상기에서, 보조 용량 전극(22)은 그의 상부 표면에 미세 직경을 갖는 수 개의 홈들에 의해 굴곡이 형성되기 때문에 표면적이 증가하게 되며, 이에 따라, 보조 용량 전극(22)과 화소 전극(26) 사이에서 발생되는 단위 면적당 캐패시턴스는 종래 보다 더욱 증가하게 된다.In the above, the storage capacitor electrode 22 has an increased surface area because the bending is formed by several grooves having a fine diameter on the upper surface thereof, and thus, between the storage capacitor electrode 22 and the pixel electrode 26. The capacitance per unit area generated at is increased more than before.
또한, 보조 용량 캐패시터가 향상되는 것에 기인하여 동일한 보조 용량 캐패시터를 갖는 LCD들에 대해서는 상대적으로 보조 용량 전극의 폭을 감소시킬 수 있기 때문에 개구율을 향상시킬 수 있게 된다.In addition, the aperture ratio can be improved because the width of the storage capacitor electrode can be relatively reduced for LCDs having the same storage capacitor due to the improvement of the storage capacitor.
도 4 는 본 발명의 제2실시예에 따른 LCD의 보조 용량 캐패시터를 설명하기 위한 도면으로서, 상기한 실시예와 마찬가지로 하부기판(30) 상에 보조 용량 전극 (32)을 형성한 상태에서, 식각 공정을 실시하여 상기 보조 용량 전극(32)의 표면에 굴곡을 형성시킨다. 여기서, 식각 공정은 미세 직경의 홀 패턴들이 구비된 식각 마스크(도시안됨)를 보조 용량 전극(32) 상에 배치시킨 상태에서, 풀 식각(Full Etch)을 실시하여 상기 보조 용량 전극에 굴곡, 즉, 미세 직경을 갖는 수 개의 홀들이 형성되도록 한다.4 is a view for explaining the storage capacitor of the LCD according to the second embodiment of the present invention, in the state in which the storage capacitor electrode 32 is formed on the lower substrate 30 as in the above-described embodiment, the etching The process is performed to form a bend on the surface of the storage capacitor electrode 32. Here, in the etching process, the etching mask (not shown) with hole patterns having a fine diameter is disposed on the storage capacitor electrode 32, and then, the etching is performed on the storage capacitor electrode by performing full etching. , Several holes having a fine diameter are formed.
이후, 내부에 미세 직경의 홀들이 형성된 보조 용량 전극(32)을 포함한 하부기판(30) 전면에 절연막(34)을 형성하고, 이 절연막(34) 상에 ITO로된 화소 전극(36)을 형성하여 보조 용량 캐패시터를 형성한다.Subsequently, an insulating film 34 is formed on the entire surface of the lower substrate 30 including the storage capacitor electrode 32 having fine diameter holes therein, and a pixel electrode 36 made of ITO is formed on the insulating film 34. To form a storage capacitor.
본 발명의 제2실시예에서는 보조 용량 전극에 수 개의 홀들을 형성하여 굴곡을 갖도록 함으로써, 상기 실시예와 마찬가지로 보조 용량 전극의 표면적을 증가시킬 수 있으며, 이에 따라, 단위 면적당 캐패시턴스를 증가시킬 수 있다.In the second embodiment of the present invention, by forming a plurality of holes in the storage capacitor electrode to have a bend, the surface area of the storage capacitor electrode can be increased in the same manner as in the above embodiment, and thus the capacitance per unit area can be increased. .
또한, 불투명 금속으로 형성되는 보조 용량 전극에 수 개의 홀들을 형성하기 때문에 이러한 홀들을 통해 빛이 통과될 수 있으며, 이 결과, 화소에서의 개구율을 증가시킬 수 있게 된다.Further, since several holes are formed in the storage capacitor electrode formed of the opaque metal, light can pass through these holes, and as a result, the aperture ratio in the pixel can be increased.
도 5 는 본 발명의 제3실시예에 따른 LCD의 보조 용량 캐패시터를 설명하기 위한 도면으로서, 상기한 실시예들과 동일하게 하부기판(40) 상에 보조 용량 전극(42)을 형성한 상태에서, 식각 공정을 실시하여 상기 보조 용량 전극(42)의 표면에 굴곡이 형성되도록 한다. 이때, 식각 공정은 보조 용량 전극을 플라즈마에 노출시켜 이온 데미지에 의해 보조 용량 전극의 표면이 거칠게 되도록 하는 슬라이트 식각(Slight Etch)을 실시하며, 이 결과, 보조 용량 전극의 표면은 불규칙적인 굴곡이 형성된다.FIG. 5 is a view for explaining a storage capacitor of an LCD according to a third embodiment of the present invention, in which the storage capacitor electrode 42 is formed on the lower substrate 40 in the same manner as the above-described embodiments. The etching process is performed to form a bend on the surface of the storage capacitor electrode 42. At this time, the etching process performs a Slight Etch to expose the storage capacitor electrode to the plasma to rough the surface of the storage capacitor electrode by ion damage, as a result, the surface of the storage capacitor electrode is irregular curved Is formed.
이후, 표면에 굴곡이 형성된 보조 용량 전극(42)을 포함한 하부기판(40) 전면 상에 절연막(44)을 증착하고, 이 절연막(44) 상에 화소 전극(46)을 형성한다.Thereafter, an insulating film 44 is deposited on the entire surface of the lower substrate 40 including the storage capacitor electrode 42 having a curved surface, and a pixel electrode 46 is formed on the insulating film 44.
본 발명의 제3실시예에서는 보조 용량 전극의 상부 표면을 거칠게 함으로써, 앞선 실시예들과 마찬가지로 상기 보조 용량 전극의 표면적을 증가시킬 수 있으며, 이에 따라, 단위 면적당 캐패시턴스를 향상시킬 수 있다.In the third embodiment of the present invention, by roughening the upper surface of the storage capacitor electrode, it is possible to increase the surface area of the storage capacitor electrode, as in the previous embodiments, thereby improving the capacitance per unit area.
이상에서와 같이, 본 발명은 식각 공정을 통해 보조 용량 전극의 표면에 굴곡을 형성해 줌으로써, 상기 보조 용량 전극의 표면적을 증가시켜 단위 면적당 캐패시턴스를 증가시킬 수 있고, 이에 따라, LCD의 화질을 개선시킬 수 있다.As described above, according to the present invention, by forming a bend on the surface of the storage capacitor electrode through an etching process, the surface area of the storage capacitor electrode can be increased to increase capacitance per unit area, thereby improving the image quality of the LCD. Can be.
또한, 보조 용량 캐패시터를 향상시키는 것에 기인하여 보조 용량 전극의 폭을 감소시킬 수 있기 때문에 LCD의 개구율을 향상시킬 수 있다.In addition, since the width of the storage capacitor electrode can be reduced due to the improvement of the storage capacitor, the aperture ratio of the LCD can be improved.
한편, 여기에서는 본 발명의 특정 실시예에 대하여 설명하고 도시하였지만, 당업자에 의하여 이에 대한 수정과 변형을 할 수 있다. 따라서, 이하, 특허청구의 범위는 본 발명의 진정한 사상과 범위에 속하는 한 모든 수정과 변형을 포함하는 것으로 이해할 수 있다.Meanwhile, although specific embodiments of the present invention have been described and illustrated, modifications and variations can be made by those skilled in the art. Accordingly, the following claims are to be understood as including all modifications and variations as long as they fall within the true spirit and scope of the present invention.
Claims (5)
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| KR1019980024335A KR100328846B1 (en) | 1998-06-26 | 1998-06-26 | Auxiliary Capacitors for Liquid Crystal Display Devices and Forming Method Thereof |
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| KR1019980024335A KR100328846B1 (en) | 1998-06-26 | 1998-06-26 | Auxiliary Capacitors for Liquid Crystal Display Devices and Forming Method Thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020002089A (en) * | 2000-06-29 | 2002-01-09 | 주식회사 현대 디스플레이 테크놀로지 | Method of manufacturing lcd with high aperture ratio |
| KR100461092B1 (en) * | 2001-11-08 | 2004-12-09 | 에이유 오프트로닉스 코퍼레이션 | A process for manufacturing reflective tft-lcd with rough diffuser |
| KR100469342B1 (en) * | 2001-07-11 | 2005-02-02 | 엘지.필립스 엘시디 주식회사 | Liquid Crystal Display Device |
| KR100603284B1 (en) * | 2002-10-22 | 2006-07-20 | 삼성에스디아이 주식회사 | Electroluminescent display panel wherein capacitance is increased |
-
1998
- 1998-06-26 KR KR1019980024335A patent/KR100328846B1/en not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020002089A (en) * | 2000-06-29 | 2002-01-09 | 주식회사 현대 디스플레이 테크놀로지 | Method of manufacturing lcd with high aperture ratio |
| KR100469342B1 (en) * | 2001-07-11 | 2005-02-02 | 엘지.필립스 엘시디 주식회사 | Liquid Crystal Display Device |
| KR100461092B1 (en) * | 2001-11-08 | 2004-12-09 | 에이유 오프트로닉스 코퍼레이션 | A process for manufacturing reflective tft-lcd with rough diffuser |
| KR100603284B1 (en) * | 2002-10-22 | 2006-07-20 | 삼성에스디아이 주식회사 | Electroluminescent display panel wherein capacitance is increased |
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